FR2467486B1 - - Google Patents

Info

Publication number
FR2467486B1
FR2467486B1 FR7925517A FR7925517A FR2467486B1 FR 2467486 B1 FR2467486 B1 FR 2467486B1 FR 7925517 A FR7925517 A FR 7925517A FR 7925517 A FR7925517 A FR 7925517A FR 2467486 B1 FR2467486 B1 FR 2467486B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7925517A
Other versions
FR2467486A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7925517A priority Critical patent/FR2467486A1/fr
Publication of FR2467486A1 publication Critical patent/FR2467486A1/fr
Application granted granted Critical
Publication of FR2467486B1 publication Critical patent/FR2467486B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
FR7925517A 1979-10-12 1979-10-12 Procede de formation de jonctions n-p, jonctions de ce type et leurs applications Granted FR2467486A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7925517A FR2467486A1 (fr) 1979-10-12 1979-10-12 Procede de formation de jonctions n-p, jonctions de ce type et leurs applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7925517A FR2467486A1 (fr) 1979-10-12 1979-10-12 Procede de formation de jonctions n-p, jonctions de ce type et leurs applications

Publications (2)

Publication Number Publication Date
FR2467486A1 FR2467486A1 (fr) 1981-04-17
FR2467486B1 true FR2467486B1 (fr) 1983-05-20

Family

ID=9230654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7925517A Granted FR2467486A1 (fr) 1979-10-12 1979-10-12 Procede de formation de jonctions n-p, jonctions de ce type et leurs applications

Country Status (1)

Country Link
FR (1) FR2467486A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813990B2 (ja) * 1989-08-17 1998-10-22 株式会社半導体エネルギー研究所 窒化ホウ素を用いた電子装置の作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270754A (en) * 1975-12-10 1977-06-13 Toshiba Corp Impurity doping method

Also Published As

Publication number Publication date
FR2467486A1 (fr) 1981-04-17

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Legal Events

Date Code Title Description
ST Notification of lapse