FR2501908B2 - Croissance epitaxiale acceleree en phase vapeur, sous pression reduite - Google Patents

Croissance epitaxiale acceleree en phase vapeur, sous pression reduite

Info

Publication number
FR2501908B2
FR2501908B2 FR818104852A FR8104852A FR2501908B2 FR 2501908 B2 FR2501908 B2 FR 2501908B2 FR 818104852 A FR818104852 A FR 818104852A FR 8104852 A FR8104852 A FR 8104852A FR 2501908 B2 FR2501908 B2 FR 2501908B2
Authority
FR
France
Prior art keywords
accelerated
steam
reduced pressure
epitaxial growth
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR818104852A
Other languages
English (en)
Other versions
FR2501908A2 (fr
Inventor
Jean-Louis Gentner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR818104852A priority Critical patent/FR2501908B2/fr
Publication of FR2501908A2 publication Critical patent/FR2501908A2/fr
Application granted granted Critical
Publication of FR2501908B2 publication Critical patent/FR2501908B2/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
FR818104852A 1981-03-11 1981-03-11 Croissance epitaxiale acceleree en phase vapeur, sous pression reduite Expired - Lifetime FR2501908B2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR818104852A FR2501908B2 (fr) 1981-03-11 1981-03-11 Croissance epitaxiale acceleree en phase vapeur, sous pression reduite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR818104852A FR2501908B2 (fr) 1981-03-11 1981-03-11 Croissance epitaxiale acceleree en phase vapeur, sous pression reduite

Publications (2)

Publication Number Publication Date
FR2501908A2 FR2501908A2 (fr) 1982-09-17
FR2501908B2 true FR2501908B2 (fr) 1990-08-17

Family

ID=9256107

Family Applications (1)

Application Number Title Priority Date Filing Date
FR818104852A Expired - Lifetime FR2501908B2 (fr) 1981-03-11 1981-03-11 Croissance epitaxiale acceleree en phase vapeur, sous pression reduite

Country Status (1)

Country Link
FR (1) FR2501908B2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
DE3721638A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Materialsparendes verfahren zur herstellung von mischkristallen
US5348911A (en) * 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258863A (fr) * 1959-12-11

Also Published As

Publication number Publication date
FR2501908A2 (fr) 1982-09-17

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