FR2535112B1 - Dispositif semi-conducteur optoelectronique de type phototransistor - Google Patents

Dispositif semi-conducteur optoelectronique de type phototransistor

Info

Publication number
FR2535112B1
FR2535112B1 FR8217741A FR8217741A FR2535112B1 FR 2535112 B1 FR2535112 B1 FR 2535112B1 FR 8217741 A FR8217741 A FR 8217741A FR 8217741 A FR8217741 A FR 8217741A FR 2535112 B1 FR2535112 B1 FR 2535112B1
Authority
FR
France
Prior art keywords
semiconductor device
optoelectronic semiconductor
type optoelectronic
phototransistor type
phototransistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8217741A
Other languages
English (en)
Other versions
FR2535112A1 (fr
Inventor
Paul Jay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8217741A priority Critical patent/FR2535112B1/fr
Publication of FR2535112A1 publication Critical patent/FR2535112A1/fr
Application granted granted Critical
Publication of FR2535112B1 publication Critical patent/FR2535112B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/283—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having Schottky gates
    • H10F30/2843—Schottky gate FETs, e.g. photo MESFETs
FR8217741A 1982-10-22 1982-10-22 Dispositif semi-conducteur optoelectronique de type phototransistor Expired FR2535112B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8217741A FR2535112B1 (fr) 1982-10-22 1982-10-22 Dispositif semi-conducteur optoelectronique de type phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8217741A FR2535112B1 (fr) 1982-10-22 1982-10-22 Dispositif semi-conducteur optoelectronique de type phototransistor

Publications (2)

Publication Number Publication Date
FR2535112A1 FR2535112A1 (fr) 1984-04-27
FR2535112B1 true FR2535112B1 (fr) 1986-04-11

Family

ID=9278520

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8217741A Expired FR2535112B1 (fr) 1982-10-22 1982-10-22 Dispositif semi-conducteur optoelectronique de type phototransistor

Country Status (1)

Country Link
FR (1) FR2535112B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2650440A1 (fr) * 1989-07-28 1991-02-01 Thomson Composants Microondes Circuit electronique de traitement de signaux lumineux

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048181A1 (de) * 1970-09-30 1972-04-06 Siemens Ag Fototransistor
DE2149266A1 (de) * 1971-10-02 1973-04-05 Licentia Gmbh Feldeffekttransistor
US4346394A (en) * 1980-03-24 1982-08-24 Hughes Aircraft Company Gallium arsenide burrus FET structure for optical detection

Also Published As

Publication number Publication date
FR2535112A1 (fr) 1984-04-27

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Legal Events

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ST Notification of lapse