FR2571896B1 - Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication - Google Patents

Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication

Info

Publication number
FR2571896B1
FR2571896B1 FR8507085A FR8507085A FR2571896B1 FR 2571896 B1 FR2571896 B1 FR 2571896B1 FR 8507085 A FR8507085 A FR 8507085A FR 8507085 A FR8507085 A FR 8507085A FR 2571896 B1 FR2571896 B1 FR 2571896B1
Authority
FR
France
Prior art keywords
mercury
manufacturing
epitaxial layer
cadmium telluride
infrared photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8507085A
Other languages
English (en)
Other versions
FR2571896A1 (fr
Inventor
Malcolm John Bevan
Surendra Pratap Singh
Michael James Hyliands
Linda Kay Nicholson
Andrew William Gurnell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Publication of FR2571896A1 publication Critical patent/FR2571896A1/fr
Application granted granted Critical
Publication of FR2571896B1 publication Critical patent/FR2571896B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
FR8507085A 1983-09-13 1985-05-06 Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication Expired FR2571896B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8324512 1983-09-13

Publications (2)

Publication Number Publication Date
FR2571896A1 FR2571896A1 (fr) 1986-04-18
FR2571896B1 true FR2571896B1 (fr) 1988-07-22

Family

ID=10548717

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8507085A Expired FR2571896B1 (fr) 1983-09-13 1985-05-06 Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication

Country Status (8)

Country Link
DE (1) DE3447954A1 (fr)
DK (1) DK436984A (fr)
FR (1) FR2571896B1 (fr)
GB (1) GB2165089B (fr)
IT (1) IT8567524A0 (fr)
NL (1) NL8415005A (fr)
NO (1) NO843614L (fr)
SE (1) SE8504828D0 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2137259C1 (ru) * 1997-10-21 1999-09-10 Государственный научный центр Российской Федерации Государственное предприятие Научно-производственное объединение "Орион" Способ изготовления многоэлементного фотоприемника
FR2833757B1 (fr) * 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
CN115197705B (zh) * 2022-05-30 2023-08-15 北京智创芯源科技有限公司 一种蚀刻液、一种碲镉汞红外焦平面混成芯片的减薄方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6910274A (fr) * 1969-07-04 1971-01-06
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors

Also Published As

Publication number Publication date
FR2571896A1 (fr) 1986-04-18
DK436984A (da) 1985-07-15
GB2165089B (en) 1987-06-03
GB2165089A (en) 1986-04-03
IT8567524A0 (it) 1985-06-06
SE8504828D0 (sv) 1985-10-16
NL8415005A (nl) 1986-07-01
DE3447954A1 (de) 1987-01-02
NO843614L (no) 1986-06-23

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Legal Events

Date Code Title Description
ST Notification of lapse