FR2673044B1 - Transistor a effet de champ comprenant une couche enterree, et procede de fabrication. - Google Patents

Transistor a effet de champ comprenant une couche enterree, et procede de fabrication.

Info

Publication number
FR2673044B1
FR2673044B1 FR9201627A FR9201627A FR2673044B1 FR 2673044 B1 FR2673044 B1 FR 2673044B1 FR 9201627 A FR9201627 A FR 9201627A FR 9201627 A FR9201627 A FR 9201627A FR 2673044 B1 FR2673044 B1 FR 2673044B1
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
buried layer
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9201627A
Other languages
English (en)
Other versions
FR2673044A1 (fr
Inventor
Kaisha Minoru Noda C O Mitsubi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2673044A1 publication Critical patent/FR2673044A1/fr
Application granted granted Critical
Publication of FR2673044B1 publication Critical patent/FR2673044B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
FR9201627A 1991-02-14 1992-02-13 Transistor a effet de champ comprenant une couche enterree, et procede de fabrication. Expired - Fee Related FR2673044B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3044244A JP2746482B2 (ja) 1991-02-14 1991-02-14 電界効果型トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
FR2673044A1 FR2673044A1 (fr) 1992-08-21
FR2673044B1 true FR2673044B1 (fr) 1994-12-09

Family

ID=12686125

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9201627A Expired - Fee Related FR2673044B1 (fr) 1991-02-14 1992-02-13 Transistor a effet de champ comprenant une couche enterree, et procede de fabrication.

Country Status (4)

Country Link
US (1) US5187379A (fr)
JP (1) JP2746482B2 (fr)
FR (1) FR2673044B1 (fr)
GB (1) GB2252874B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
JP2727818B2 (ja) * 1991-09-17 1998-03-18 日本電気株式会社 半導体装置
JPH07201885A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法
US6369408B1 (en) * 1999-10-06 2002-04-09 Agere Systems Guardian Corp. GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same
ATE536633T1 (de) * 2003-09-05 2011-12-15 Cree Sweden Ab Verfahren und einrichtung
US7485514B2 (en) * 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET
US8941171B2 (en) * 2010-07-02 2015-01-27 Micron Technology, Inc. Flatband voltage adjustment in a semiconductor device
US20140197461A1 (en) * 2013-01-14 2014-07-17 International Rectifier Corporation Semiconductor Structure Including A Spatially Confined Dielectric Region
US9941363B2 (en) * 2015-12-18 2018-04-10 International Business Machines Corporation III-V transistor device with self-aligned doped bottom barrier
US20170179232A1 (en) * 2015-12-18 2017-06-22 International Business Machines Corporation Iii-v transistor device with doped bottom barrier
FR3081613B1 (fr) * 2018-05-22 2022-12-09 Exagan Transistor a haute mobilite electronique en mode enrichissement

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPS6118180A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
US4763183A (en) * 1984-08-01 1988-08-09 American Telephone And Telegraph Co., At&T Bell Laboratories Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method
EP0181091B1 (fr) * 1984-11-02 1990-06-13 Kabushiki Kaisha Toshiba Transistor à effet de champ à grille Schottky et méthode de fabrication pour cela
JPS61187277A (ja) * 1985-02-14 1986-08-20 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
JPS61248569A (ja) * 1985-04-26 1986-11-05 Toshiba Corp ヘテロ接合電界効果トランジスタ
JPS62259472A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 半導体装置
JPS6352479A (ja) * 1986-08-22 1988-03-05 Toshiba Corp ＧａＡｓ電界効果型トランジスタ及びその製造方法
DE3737144A1 (de) * 1986-11-10 1988-05-11 Hewlett Packard Co Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung
JPS63302535A (ja) * 1987-06-03 1988-12-09 Mitsubishi Electric Corp ガリウム砒素集積回路
JPH01162378A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置
JP2527775B2 (ja) * 1987-12-28 1996-08-28 三菱電機株式会社 電界効果トランジスタ及びその製造方法
JP2716719B2 (ja) * 1988-03-04 1998-02-18 株式会社東芝 Ｍｅｓｆｅｔの製造方法
JPH02105539A (ja) * 1988-10-14 1990-04-18 Nec Corp 電界効果トランジスタ
WO1991001569A1 (fr) * 1989-07-14 1991-02-07 Seiko Instruments Inc. Dispositif a semi-conducteurs et procede de production

Also Published As

Publication number Publication date
JPH04260337A (ja) 1992-09-16
GB9119029D0 (en) 1991-10-23
JP2746482B2 (ja) 1998-05-06
GB2252874A (en) 1992-08-19
FR2673044A1 (fr) 1992-08-21
GB2252874B (en) 1995-02-22
US5187379A (en) 1993-02-16

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