FR2804246B1 - Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre - Google Patents

Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre

Info

Publication number
FR2804246B1
FR2804246B1 FR0000764A FR0000764A FR2804246B1 FR 2804246 B1 FR2804246 B1 FR 2804246B1 FR 0000764 A FR0000764 A FR 0000764A FR 0000764 A FR0000764 A FR 0000764A FR 2804246 B1 FR2804246 B1 FR 2804246B1
Authority
FR
France
Prior art keywords
reticle
implementation
equipment
high contrast
lithography process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0000764A
Other languages
English (en)
Other versions
FR2804246A1 (fr
Inventor
Jean Pierre Lazzari
Roux Vincent Le
Gilles Borsoni
Gianni Giardino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Ion SA
Original Assignee
X Ion SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Ion SA filed Critical X Ion SA
Priority to FR0000764A priority Critical patent/FR2804246B1/fr
Priority to PCT/FR2000/003392 priority patent/WO2001053891A1/fr
Priority to AU2001221837A priority patent/AU2001221837A1/en
Publication of FR2804246A1 publication Critical patent/FR2804246A1/fr
Application granted granted Critical
Publication of FR2804246B1 publication Critical patent/FR2804246B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR0000764A 2000-01-21 2000-01-21 Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre Expired - Fee Related FR2804246B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0000764A FR2804246B1 (fr) 2000-01-21 2000-01-21 Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre
PCT/FR2000/003392 WO2001053891A1 (fr) 2000-01-21 2000-12-05 Procede de lithographie ionique, revetement a fort contraste, equipement et reticule de mise en oeuvre
AU2001221837A AU2001221837A1 (en) 2000-01-21 2000-12-05 Method for ionic lithography, high contrast coating, equipment and reticle therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0000764A FR2804246B1 (fr) 2000-01-21 2000-01-21 Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre

Publications (2)

Publication Number Publication Date
FR2804246A1 FR2804246A1 (fr) 2001-07-27
FR2804246B1 true FR2804246B1 (fr) 2003-09-19

Family

ID=8846158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0000764A Expired - Fee Related FR2804246B1 (fr) 2000-01-21 2000-01-21 Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre

Country Status (3)

Country Link
AU (1) AU2001221837A1 (fr)
FR (1) FR2804246B1 (fr)
WO (1) WO2001053891A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3475890B2 (ja) * 2000-02-10 2003-12-10 Ｔｄｋ株式会社 パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法
FR2849266A1 (fr) * 2002-12-18 2004-06-25 Gilles Borsoni Machine de traitement uniforme de surfaces d'echantillons par projection d'ions multicharges
US8053725B2 (en) 2009-06-29 2011-11-08 Fei Company Beam quality in FIB systems

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT391771B (de) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
JP2957669B2 (ja) * 1990-09-28 1999-10-06 株式会社東芝 反射マスク及びこれを用いた荷電ビーム露光装置
JP3542140B2 (ja) * 1997-09-10 2004-07-14 株式会社日立製作所 投射型イオンビーム加工装置

Also Published As

Publication number Publication date
WO2001053891A1 (fr) 2001-07-26
AU2001221837A1 (en) 2001-07-31
FR2804246A1 (fr) 2001-07-27

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Legal Events

Date Code Title Description
ST Notification of lapse