FR2834128B1 - Dispositif de protection bidirectionnel a faible capacite - Google Patents

Dispositif de protection bidirectionnel a faible capacite

Info

Publication number
FR2834128B1
FR2834128B1 FR0116755A FR0116755A FR2834128B1 FR 2834128 B1 FR2834128 B1 FR 2834128B1 FR 0116755 A FR0116755 A FR 0116755A FR 0116755 A FR0116755 A FR 0116755A FR 2834128 B1 FR2834128 B1 FR 2834128B1
Authority
FR
France
Prior art keywords
protection device
low capacity
bidirectional protection
bidirectional
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0116755A
Other languages
English (en)
Other versions
FR2834128A1 (fr
Inventor
Christian Ballon
Le Gall Rachel Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0116755A priority Critical patent/FR2834128B1/fr
Priority to US10/325,626 priority patent/US6919587B2/en
Priority to GB0229771A priority patent/GB2388470B/en
Publication of FR2834128A1 publication Critical patent/FR2834128A1/fr
Application granted granted Critical
Publication of FR2834128B1 publication Critical patent/FR2834128B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
FR0116755A 2001-12-21 2001-12-21 Dispositif de protection bidirectionnel a faible capacite Expired - Fee Related FR2834128B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0116755A FR2834128B1 (fr) 2001-12-21 2001-12-21 Dispositif de protection bidirectionnel a faible capacite
US10/325,626 US6919587B2 (en) 2001-12-21 2002-12-19 Low-capacitance bidirectional protection device
GB0229771A GB2388470B (en) 2001-12-21 2002-12-20 Low-capacitance bidirectional protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0116755A FR2834128B1 (fr) 2001-12-21 2001-12-21 Dispositif de protection bidirectionnel a faible capacite

Publications (2)

Publication Number Publication Date
FR2834128A1 FR2834128A1 (fr) 2003-06-27
FR2834128B1 true FR2834128B1 (fr) 2005-03-04

Family

ID=8870906

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0116755A Expired - Fee Related FR2834128B1 (fr) 2001-12-21 2001-12-21 Dispositif de protection bidirectionnel a faible capacite

Country Status (3)

Country Link
US (1) US6919587B2 (fr)
FR (1) FR2834128B1 (fr)
GB (1) GB2388470B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
FR2834128B1 (fr) * 2001-12-21 2005-03-04 St Microelectronics Sa Dispositif de protection bidirectionnel a faible capacite
KR20080085226A (ko) * 2006-02-17 2008-09-23 엔엑스피 비 브이 집적 반도체 디바이스를 보호하기 위한 회로 장치, 집적 회로 소자 및 그 제조 방법
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
FR2953062B1 (fr) * 2009-11-24 2011-12-16 St Microelectronics Tours Sas Diode de protection bidirectionnelle basse tension
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
WO2011160130A2 (fr) 2010-06-18 2011-12-22 Sionyx, Inc Dispositifs photosensibles à grande vitesse et procédés associés
FR2963984A1 (fr) * 2010-08-17 2012-02-24 St Microelectronics Tours Sas Diode de shockley a faible tension de declenchement
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (fr) 2011-07-13 2013-01-17 Sionyx, Inc. Dispositifs de prise d'images biométriques et procédés associés
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
EP3067930B1 (fr) * 2015-03-09 2021-08-11 Nexperia B.V. Système de transmission de données
US9941264B2 (en) * 2015-04-03 2018-04-10 Littelfuse, Inc. Transient overvoltage protection device

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US4080538A (en) * 1974-12-20 1978-03-21 Mitsubishi Denki Kabushiki Kaisha Method of controlling switching of PNPN semiconductor switching device
JPS5210012A (en) * 1975-07-14 1977-01-26 Hitachi Ltd Pnpn switch driving circuit
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
JPS5441658A (en) * 1977-09-09 1979-04-03 Hitachi Ltd Gate unit of bidirectional photo thyristor
US4202024A (en) * 1978-11-08 1980-05-06 Tii Industries, Inc. Repeater bypass protection apparatus
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2617641B1 (fr) * 1987-07-03 1989-12-01 Thomson Semiconducteurs Thyristor de protection a gachette auxiliaire
FR2664760B1 (fr) * 1990-07-13 1996-09-27 Sgs Thomson Microelectronics Dispositif de protection contre des surtensions et sa realisation monolithique.
US5150271A (en) 1990-08-21 1992-09-22 Texas Instruments Incorporated Telecommunication equipment protector
FR2670338B1 (fr) * 1990-12-07 1993-03-26 Sgs Thomson Microelectronics Circuit de protection programmable et sa realisation monolithique.
US5468976A (en) * 1993-08-27 1995-11-21 Evseev; Yury Semi conductor rectifying module
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
FR2713400B1 (fr) * 1993-11-29 1996-02-16 Sgs Thomson Microelectronics Composant de protection triangle.
FR2718899B1 (fr) * 1994-04-14 1996-07-12 Sgs Thomson Microelectronics Indicateur de défaut d'un composant de protection.
FR2727571A1 (fr) * 1994-11-25 1996-05-31 Sgs Thomson Microelectronics Thyristor a sensibilite en retournement controlee
FR2729008B1 (fr) * 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
US6411155B2 (en) * 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit
FR2743938B1 (fr) * 1996-01-19 1998-04-10 Sgs Thomson Microelectronics Composant de protection d'interface de lignes telephoniques
FR2753837B1 (fr) * 1996-09-25 1999-01-29 Composant de protection a retournement bidirectionnel a claquage en surface
FR2754065B1 (fr) * 1996-09-27 1998-12-18 Sgs Thomson Microelectronics Circuit de simulation d'un composant a retournement
US6407901B1 (en) * 1999-04-19 2002-06-18 Teccor Electronics, Lp Semiconductor device providing overvoltage and overcurrent protection for a line
US6501630B1 (en) * 1999-12-17 2002-12-31 Koninklijke Philips Electronics N.V. Bi-directional ESD diode structure
US6552371B2 (en) * 2001-02-16 2003-04-22 Teraburst Networks Inc. Telecommunications switch array with thyristor addressing
FR2834128B1 (fr) * 2001-12-21 2005-03-04 St Microelectronics Sa Dispositif de protection bidirectionnel a faible capacite

Also Published As

Publication number Publication date
GB2388470A (en) 2003-11-12
GB0229771D0 (en) 2003-01-29
GB2388470B (en) 2005-11-09
FR2834128A1 (fr) 2003-06-27
US6919587B2 (en) 2005-07-19
US20030116779A1 (en) 2003-06-26

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831