FR2857784B1 - Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement - Google Patents

Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement

Info

Publication number
FR2857784B1
FR2857784B1 FR0308770A FR0308770A FR2857784B1 FR 2857784 B1 FR2857784 B1 FR 2857784B1 FR 0308770 A FR0308770 A FR 0308770A FR 0308770 A FR0308770 A FR 0308770A FR 2857784 B1 FR2857784 B1 FR 2857784B1
Authority
FR
France
Prior art keywords
optical device
semiconductor optical
indium phosphide
wave lengths
large operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0308770A
Other languages
English (en)
Other versions
FR2857784A1 (fr
Inventor
Jean Louis Gentner
Francois Alexandre
Bruno Thedrez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to FR0308770A priority Critical patent/FR2857784B1/fr
Priority to DE602004002440T priority patent/DE602004002440T2/de
Priority to US10/893,140 priority patent/US7109526B2/en
Priority to EP04254246A priority patent/EP1505699B1/fr
Publication of FR2857784A1 publication Critical patent/FR2857784A1/fr
Application granted granted Critical
Publication of FR2857784B1 publication Critical patent/FR2857784B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
FR0308770A 2003-07-18 2003-07-18 Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement Expired - Fee Related FR2857784B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0308770A FR2857784B1 (fr) 2003-07-18 2003-07-18 Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement
DE602004002440T DE602004002440T2 (de) 2003-07-18 2004-07-15 Optische Halbleitervorrichtung auf Indiumphosphidsubstrat für Operation bei hohen Wellenlängen
US10/893,140 US7109526B2 (en) 2003-07-18 2004-07-15 Semiconductor optical device on an indium phosphide substrate for long operating wavelengths
EP04254246A EP1505699B1 (fr) 2003-07-18 2004-07-15 Dispositif optique à semiconducteur sur substrat de phosphure d'indium pour operation aux longueurs d'ondes élevés

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0308770A FR2857784B1 (fr) 2003-07-18 2003-07-18 Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement

Publications (2)

Publication Number Publication Date
FR2857784A1 FR2857784A1 (fr) 2005-01-21
FR2857784B1 true FR2857784B1 (fr) 2005-10-07

Family

ID=33548234

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0308770A Expired - Fee Related FR2857784B1 (fr) 2003-07-18 2003-07-18 Dispositif optique semi-conducteur sur substrat en phosphure d'indium pour grandes longueurs d'onde de fonctionnement

Country Status (4)

Country Link
US (1) US7109526B2 (fr)
EP (1) EP1505699B1 (fr)
DE (1) DE602004002440T2 (fr)
FR (1) FR2857784B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004037549A1 (de) * 2004-08-03 2006-03-16 Deutsche Telekom Ag Vorrichtung zur Erzeugung und Modulation eines hochfrequenten Signals
FR2888430B1 (fr) * 2005-07-08 2007-10-26 Alcatel Sa Structure a absorbant optique saturable pour dispositif de regeneration de signaux optiques
JP4794505B2 (ja) * 2007-06-15 2011-10-19 富士通株式会社 半導体光増幅装置、半導体光増幅システム及び半導体光集積素子
US8653460B2 (en) * 2009-05-28 2014-02-18 Technion Research & Development Foundation Limited Method and system for detecting light
JP5240579B2 (ja) * 2009-09-07 2013-07-17 株式会社リコー 画像形成装置
US8367450B2 (en) 2010-02-21 2013-02-05 Technion Research & Development Foundation Ltd. Light emitting system and method of fabricating and using the same
IL211339A (en) * 2010-02-21 2015-05-31 Technion Res & Dev Foundation Light detection and manufacturing method
JPWO2015137373A1 (ja) * 2014-03-11 2017-04-06 古河電気工業株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282211A (en) * 1991-08-14 1994-01-25 Genrad, Inc. Slip detection during bit-error-rate measurement
US6233264B1 (en) * 1996-08-27 2001-05-15 Ricoh Company, Ltd. Optical semiconductor device having an active layer containing N
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
US7180100B2 (en) * 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

Also Published As

Publication number Publication date
DE602004002440D1 (de) 2006-11-02
DE602004002440T2 (de) 2007-09-13
EP1505699A1 (fr) 2005-02-09
EP1505699B1 (fr) 2006-09-20
US20050056868A1 (en) 2005-03-17
FR2857784A1 (fr) 2005-01-21
US7109526B2 (en) 2006-09-19

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Effective date: 20140331