FR2876497B1 - Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication - Google Patents

Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication

Info

Publication number
FR2876497B1
FR2876497B1 FR0410789A FR0410789A FR2876497B1 FR 2876497 B1 FR2876497 B1 FR 2876497B1 FR 0410789 A FR0410789 A FR 0410789A FR 0410789 A FR0410789 A FR 0410789A FR 2876497 B1 FR2876497 B1 FR 2876497B1
Authority
FR
France
Prior art keywords
mgo
manufacturing
same
electrical insulation
based coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0410789A
Other languages
English (en)
Other versions
FR2876497A1 (fr
Inventor
Celine Bondoux
Philippe Prene
Philippe Belleville
Robert Jerisian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0410789A priority Critical patent/FR2876497B1/fr
Priority to US11/664,765 priority patent/US8821961B2/en
Priority to JP2007536235A priority patent/JP5373287B2/ja
Priority to EP05810812A priority patent/EP1800336A1/fr
Priority to PCT/FR2005/050844 priority patent/WO2006040499A1/fr
Publication of FR2876497A1 publication Critical patent/FR2876497A1/fr
Application granted granted Critical
Publication of FR2876497B1 publication Critical patent/FR2876497B1/fr
Priority to US14/338,706 priority patent/US20140332935A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F5/00—Compounds of magnesium
    • C01F5/02—Magnesia
    • C01F5/06—Magnesia by thermal decomposition of magnesium compounds
    • C01F5/08—Magnesia by thermal decomposition of magnesium compounds by calcining magnesium hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
FR0410789A 2004-10-13 2004-10-13 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication Expired - Lifetime FR2876497B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0410789A FR2876497B1 (fr) 2004-10-13 2004-10-13 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication
US11/664,765 US8821961B2 (en) 2004-10-13 2005-10-12 MgO-based coating for electrically insulating semiconductive substrates and production method thereof
JP2007536235A JP5373287B2 (ja) 2004-10-13 2005-10-12 電気絶縁性半導体基板のＭｇＯベースのコーティング及びその製造方法
EP05810812A EP1800336A1 (fr) 2004-10-13 2005-10-12 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication
PCT/FR2005/050844 WO2006040499A1 (fr) 2004-10-13 2005-10-12 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication
US14/338,706 US20140332935A1 (en) 2004-10-13 2014-07-23 MgO-Based Coating for Electrically Insulating Semiconductive Substrates and Production Method Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0410789A FR2876497B1 (fr) 2004-10-13 2004-10-13 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2876497A1 FR2876497A1 (fr) 2006-04-14
FR2876497B1 true FR2876497B1 (fr) 2007-03-23

Family

ID=34951157

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0410789A Expired - Lifetime FR2876497B1 (fr) 2004-10-13 2004-10-13 Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication

Country Status (5)

Country Link
US (2) US8821961B2 (fr)
EP (1) EP1800336A1 (fr)
JP (1) JP5373287B2 (fr)
FR (1) FR2876497B1 (fr)
WO (1) WO2006040499A1 (fr)

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US8878245B2 (en) * 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP5899615B2 (ja) * 2010-03-18 2016-04-06 株式会社リコー 絶縁膜の製造方法及び半導体装置の製造方法
CN102782858B (zh) 2009-12-25 2015-10-07 株式会社理光 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
FR2967992B1 (fr) 2010-11-26 2015-05-29 Commissariat Energie Atomique Preparation de sols d'oxydes metalliques stables, utiles notamment pour la fabrication de films minces a proprietes optiques et resistants a l'abrasion
DE102014108348A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US10593816B2 (en) * 2015-01-08 2020-03-17 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN105869711B (zh) * 2016-06-17 2017-11-24 辽宁嘉顺化工科技有限公司 铁盘类电热元件的绝缘层材料及其制备方法
WO2025169766A1 (fr) * 2024-02-09 2025-08-14 東京エレクトロン株式会社 Dispositif de formation de film, procédé de formation de film et procédé de traitement de substrrat

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Also Published As

Publication number Publication date
FR2876497A1 (fr) 2006-04-14
JP5373287B2 (ja) 2013-12-18
US20140332935A1 (en) 2014-11-13
EP1800336A1 (fr) 2007-06-27
US8821961B2 (en) 2014-09-02
JP2008516459A (ja) 2008-05-15
WO2006040499A1 (fr) 2006-04-20
US20080258270A1 (en) 2008-10-23

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