FR2885261B1 - Element integre de memoire dynamique a acces aleatoire - Google Patents

Element integre de memoire dynamique a acces aleatoire

Info

Publication number
FR2885261B1
FR2885261B1 FR0504317A FR0504317A FR2885261B1 FR 2885261 B1 FR2885261 B1 FR 2885261B1 FR 0504317 A FR0504317 A FR 0504317A FR 0504317 A FR0504317 A FR 0504317A FR 2885261 B1 FR2885261 B1 FR 2885261B1
Authority
FR
France
Prior art keywords
random access
memory element
dynamic memory
integrated dynamic
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0504317A
Other languages
English (en)
Other versions
FR2885261A1 (fr
Inventor
Pierre Malinge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0504317A priority Critical patent/FR2885261B1/fr
Priority to US11/398,855 priority patent/US20060261390A1/en
Publication of FR2885261A1 publication Critical patent/FR2885261A1/fr
Application granted granted Critical
Publication of FR2885261B1 publication Critical patent/FR2885261B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
FR0504317A 2005-04-28 2005-04-28 Element integre de memoire dynamique a acces aleatoire Expired - Fee Related FR2885261B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0504317A FR2885261B1 (fr) 2005-04-28 2005-04-28 Element integre de memoire dynamique a acces aleatoire
US11/398,855 US20060261390A1 (en) 2005-04-28 2006-04-06 Dynamic random access memory integrated element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0504317A FR2885261B1 (fr) 2005-04-28 2005-04-28 Element integre de memoire dynamique a acces aleatoire

Publications (2)

Publication Number Publication Date
FR2885261A1 FR2885261A1 (fr) 2006-11-03
FR2885261B1 true FR2885261B1 (fr) 2007-07-13

Family

ID=35432176

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0504317A Expired - Fee Related FR2885261B1 (fr) 2005-04-28 2005-04-28 Element integre de memoire dynamique a acces aleatoire

Country Status (2)

Country Link
US (1) US20060261390A1 (fr)
FR (1) FR2885261B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102907925B1 (ko) * 2020-08-19 2026-01-02 삼성전자주식회사 반도체 소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252275B1 (en) * 1999-01-07 2001-06-26 International Business Machines Corporation Silicon-on-insulator non-volatile random access memory device
TWI230392B (en) * 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
FR2826180B1 (fr) * 2001-06-19 2003-09-19 St Microelectronics Sa Dispositif semiconducteur integre de memoire de type dram et procede de fabrication correspondant
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
KR100539276B1 (ko) * 2003-04-02 2005-12-27 삼성전자주식회사 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법

Also Published As

Publication number Publication date
FR2885261A1 (fr) 2006-11-03
US20060261390A1 (en) 2006-11-23

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091231