FR2890239B1 - Compensation des derives electriques de transistors mos - Google Patents

Compensation des derives electriques de transistors mos

Info

Publication number
FR2890239B1
FR2890239B1 FR0552638A FR0552638A FR2890239B1 FR 2890239 B1 FR2890239 B1 FR 2890239B1 FR 0552638 A FR0552638 A FR 0552638A FR 0552638 A FR0552638 A FR 0552638A FR 2890239 B1 FR2890239 B1 FR 2890239B1
Authority
FR
France
Prior art keywords
compensation
mos transistors
derivatives
electrical
electrical derivatives
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0552638A
Other languages
English (en)
Other versions
FR2890239A1 (fr
Inventor
Mickael Denais
Vincent Huard
Chittoor Parthasarathy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0552638A priority Critical patent/FR2890239B1/fr
Priority to US11/512,508 priority patent/US20070050422A1/en
Priority to US11/468,672 priority patent/US7498863B2/en
Publication of FR2890239A1 publication Critical patent/FR2890239A1/fr
Application granted granted Critical
Publication of FR2890239B1 publication Critical patent/FR2890239B1/fr
Priority to US13/040,148 priority patent/USRE44922E1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Measurement Of Current Or Voltage (AREA)
FR0552638A 2005-08-31 2005-08-31 Compensation des derives electriques de transistors mos Expired - Fee Related FR2890239B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0552638A FR2890239B1 (fr) 2005-08-31 2005-08-31 Compensation des derives electriques de transistors mos
US11/512,508 US20070050422A1 (en) 2005-08-31 2006-08-30 Data file synchronous update
US11/468,672 US7498863B2 (en) 2005-08-31 2006-08-30 Compensation for electric drifts of MOS transistors
US13/040,148 USRE44922E1 (en) 2005-08-31 2011-03-03 Compensation for electric drifts of MOS transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0552638A FR2890239B1 (fr) 2005-08-31 2005-08-31 Compensation des derives electriques de transistors mos

Publications (2)

Publication Number Publication Date
FR2890239A1 FR2890239A1 (fr) 2007-03-02
FR2890239B1 true FR2890239B1 (fr) 2008-02-01

Family

ID=36121354

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0552638A Expired - Fee Related FR2890239B1 (fr) 2005-08-31 2005-08-31 Compensation des derives electriques de transistors mos

Country Status (2)

Country Link
US (3) US20070050422A1 (fr)
FR (1) FR2890239B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786756B1 (en) * 2002-12-31 2010-08-31 Vjekoslav Svilan Method and system for latchup suppression
US7504876B1 (en) * 2006-06-28 2009-03-17 Cypress Semiconductor Corporation Substrate bias feedback scheme to reduce chip leakage power
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
US8994446B2 (en) * 2013-06-28 2015-03-31 Freescale Semiconductor, Inc. Integrated circuits and methods for monitoring forward and reverse back biasing
FR3013474A1 (fr) * 2013-11-15 2015-05-22 St Microelectronics Crolles 2
CN104133515B (zh) * 2014-07-09 2016-06-15 山东汉旗科技有限公司 Pmos管衬底选择电路
JP2016019235A (ja) * 2014-07-10 2016-02-01 株式会社半導体理工学研究センター 増幅回路、ｃｍｏｓインバータ増幅回路、比較回路、δςアナログデジタル変換器、及び半導体装置

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
JPH0756931B2 (ja) * 1988-04-18 1995-06-14 三菱電機株式会社 閾値制御型電子装置およびそれを用いた比較器
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
DE19650993A1 (de) * 1996-11-26 1998-05-28 Francotyp Postalia Gmbh Anordnung und Verfahren zur Verbesserung der Datensicherheit mittels Ringpuffer
JP3135859B2 (ja) * 1997-04-11 2001-02-19 株式会社リコー 基板バイアス回路
US6101477A (en) * 1998-01-23 2000-08-08 American Express Travel Related Services Company, Inc. Methods and apparatus for a travel-related multi-function smartcard
US6091283A (en) * 1998-02-24 2000-07-18 Sun Microsystems, Inc. Sub-threshold leakage tuning circuit
US6535869B1 (en) * 1999-03-23 2003-03-18 International Business Machines Corporation Increasing efficiency of indexing random-access files composed of fixed-length data blocks by embedding a file index therein
DE19921232B4 (de) * 1999-05-07 2007-06-21 Giesecke & Devrient Gmbh Verfahren zum gesicherten Schreiben eines Zeigers für einen Ringspeicher, zugehöriger Ringspeicher, Verwendung des Ringspeichers und Chipkarte mit Ringspeicher
DE19950543C1 (de) * 1999-10-20 2000-11-23 Infineon Technologies Ag Integrierte Schaltung mit Regelung der Einsatzspannungen ihrer Transistoren
JP2002278996A (ja) * 2001-03-22 2002-09-27 Sony Corp 記録装置および記録方法、並びに記録媒体
FR2829603A1 (fr) * 2001-09-11 2003-03-14 St Microelectronics Sa Procede et dispositif de stockage et de lecture de donnees numeriques sur un support physique
JP4276812B2 (ja) * 2002-03-20 2009-06-10 株式会社リコー 温度検出回路
US7030637B2 (en) * 2002-08-30 2006-04-18 Infineon Technologies Ag Semiconductor device for adjusting threshold value shift due to short channel effect
DE60219309T2 (de) * 2002-08-30 2008-01-03 Infineon Technologies Ag Halbleiterbaustein zum Einstellen einer durch Kurzkanaleffekte verursachten Schwellspannungsverschiebung
JP2004165649A (ja) * 2002-10-21 2004-06-10 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7786756B1 (en) * 2002-12-31 2010-08-31 Vjekoslav Svilan Method and system for latchup suppression
GB0308758D0 (en) * 2003-04-16 2003-05-21 Koninkl Philips Electronics Nv Protected power devices
JP4578878B2 (ja) * 2004-07-27 2010-11-10 パナソニック株式会社 半導体集積回路
US7385429B1 (en) * 2005-05-31 2008-06-10 Altera Corporation Charge pump with reduced current mismatch
JP4764086B2 (ja) * 2005-07-27 2011-08-31 パナソニック株式会社 半導体集積回路装置
JP2008099032A (ja) * 2006-10-12 2008-04-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7994846B2 (en) * 2009-05-14 2011-08-09 International Business Machines Corporation Method and mechanism to reduce current variation in a current reference branch circuit
CN102073575A (zh) * 2009-11-20 2011-05-25 鸿富锦精密工业（深圳）有限公司 管理引擎状态侦测电路

Also Published As

Publication number Publication date
US20070057688A1 (en) 2007-03-15
US7498863B2 (en) 2009-03-03
FR2890239A1 (fr) 2007-03-02
USRE44922E1 (en) 2014-06-03
US20070050422A1 (en) 2007-03-01

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090430