FR2901802B1 - Procede de production d'une composition de polissage mecano-chimique et procede de polissage mecano-chimique. - Google Patents

Procede de production d'une composition de polissage mecano-chimique et procede de polissage mecano-chimique.

Info

Publication number
FR2901802B1
FR2901802B1 FR0755483A FR0755483A FR2901802B1 FR 2901802 B1 FR2901802 B1 FR 2901802B1 FR 0755483 A FR0755483 A FR 0755483A FR 0755483 A FR0755483 A FR 0755483A FR 2901802 B1 FR2901802 B1 FR 2901802B1
Authority
FR
France
Prior art keywords
chemical polishing
mechanical chemical
producing
polishing composition
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0755483A
Other languages
English (en)
Other versions
FR2901802A1 (fr
Inventor
Brian L Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2901802A1 publication Critical patent/FR2901802A1/fr
Application granted granted Critical
Publication of FR2901802B1 publication Critical patent/FR2901802B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR0755483A 2006-06-05 2007-06-05 Procede de production d'une composition de polissage mecano-chimique et procede de polissage mecano-chimique. Expired - Fee Related FR2901802B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Publications (2)

Publication Number Publication Date
FR2901802A1 FR2901802A1 (fr) 2007-12-07
FR2901802B1 true FR2901802B1 (fr) 2012-11-30

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0755483A Expired - Fee Related FR2901802B1 (fr) 2006-06-05 2007-06-05 Procede de production d'une composition de polissage mecano-chimique et procede de polissage mecano-chimique.

Country Status (8)

Country Link
US (1) US7297633B1 (fr)
JP (1) JP2007324606A (fr)
KR (1) KR20070116543A (fr)
CN (1) CN101085902B (fr)
DE (1) DE102007024142A1 (fr)
FR (1) FR2901802B1 (fr)
SG (1) SG137837A1 (fr)
TW (1) TW200804577A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090057249A (ko) * 2006-09-15 2009-06-04 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 이들을 이용한 기판의 연마방법
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
JP5632378B2 (ja) 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2011072706A1 (fr) 2009-12-18 2011-06-23 Rena Gmbh Procédé d'enlèvement de couches d'un substrat
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
DE112023000723T5 (de) * 2022-01-28 2024-11-14 AGC Inc. Poliermittel, flüssiges additiv für ein poliermittel und polierverfahren

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
EP0957086A3 (fr) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Procédé pour l'élimination de composés métalliques dans une solution aqueuse acide
US6021679A (en) * 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) * 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Also Published As

Publication number Publication date
DE102007024142A1 (de) 2007-12-06
KR20070116543A (ko) 2007-12-10
FR2901802A1 (fr) 2007-12-07
CN101085902B (zh) 2010-09-08
TW200804577A (en) 2008-01-16
US7297633B1 (en) 2007-11-20
CN101085902A (zh) 2007-12-12
SG137837A1 (en) 2007-12-28
US20070281483A1 (en) 2007-12-06
JP2007324606A (ja) 2007-12-13

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Effective date: 20140228