FR2911005B1 - Transistor mos adapte a la tenue de forts courants - Google Patents

Transistor mos adapte a la tenue de forts courants

Info

Publication number
FR2911005B1
FR2911005B1 FR0655981A FR0655981A FR2911005B1 FR 2911005 B1 FR2911005 B1 FR 2911005B1 FR 0655981 A FR0655981 A FR 0655981A FR 0655981 A FR0655981 A FR 0655981A FR 2911005 B1 FR2911005 B1 FR 2911005B1
Authority
FR
France
Prior art keywords
forts
transistor mos
keep strong
keep
strong
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0655981A
Other languages
English (en)
Other versions
FR2911005A1 (fr
Inventor
Sandrine Majcherczak
Carlo Tinella
Olivier Richard
Andrea Cathelin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0655981A priority Critical patent/FR2911005B1/fr
Priority to US11/964,438 priority patent/US7829958B2/en
Publication of FR2911005A1 publication Critical patent/FR2911005A1/fr
Application granted granted Critical
Publication of FR2911005B1 publication Critical patent/FR2911005B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
FR0655981A 2006-12-27 2006-12-27 Transistor mos adapte a la tenue de forts courants Expired - Fee Related FR2911005B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0655981A FR2911005B1 (fr) 2006-12-27 2006-12-27 Transistor mos adapte a la tenue de forts courants
US11/964,438 US7829958B2 (en) 2006-12-27 2007-12-26 MOS transistor capable of withstanding significant currents

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0655981A FR2911005B1 (fr) 2006-12-27 2006-12-27 Transistor mos adapte a la tenue de forts courants

Publications (2)

Publication Number Publication Date
FR2911005A1 FR2911005A1 (fr) 2008-07-04
FR2911005B1 true FR2911005B1 (fr) 2009-06-12

Family

ID=38523223

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0655981A Expired - Fee Related FR2911005B1 (fr) 2006-12-27 2006-12-27 Transistor mos adapte a la tenue de forts courants

Country Status (2)

Country Link
US (1) US7829958B2 (fr)
FR (1) FR2911005B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7230302B2 (en) 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
EP2400552A1 (fr) * 2010-06-24 2011-12-28 Dialog Semiconductor GmbH Structure de transistor MOS dotée d'un accès facile à tous les noeuds
CN103855117B (zh) 2012-11-30 2017-01-11 英力股份有限公司 包括在其外围周围的栅极驱动器的半导体器件
US11043432B2 (en) * 2013-11-12 2021-06-22 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
US11901243B2 (en) * 2013-11-12 2024-02-13 Skyworks Solutions, Inc. Methods related to radio-frequency switching devices having improved voltage handling capability
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108775A (en) * 1979-02-09 1980-08-21 Fujitsu Ltd Semiconductor device
JPS61104674A (ja) * 1984-10-29 1986-05-22 Fujitsu Ltd 半導体装置
US5283452A (en) * 1992-02-14 1994-02-01 Hughes Aircraft Company Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier
JP2637937B2 (ja) * 1995-01-30 1997-08-06 関西日本電気株式会社 電界効果トランジスタの製造方法
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP4041660B2 (ja) * 2001-05-31 2008-01-30 ユーディナデバイス株式会社 半導体装置及びその製造方法
JP3976089B2 (ja) * 2002-08-09 2007-09-12 株式会社リコー 半導体集積回路装置及びその製造方法
JP2004096118A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20080157226A1 (en) 2008-07-03
US7829958B2 (en) 2010-11-09
FR2911005A1 (fr) 2008-07-04

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Legal Events

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Effective date: 20130830