FR2916902B1 - Transistor a effet de champ a nanotubes de carbone - Google Patents

Transistor a effet de champ a nanotubes de carbone

Info

Publication number
FR2916902B1
FR2916902B1 FR0755391A FR0755391A FR2916902B1 FR 2916902 B1 FR2916902 B1 FR 2916902B1 FR 0755391 A FR0755391 A FR 0755391A FR 0755391 A FR0755391 A FR 0755391A FR 2916902 B1 FR2916902 B1 FR 2916902B1
Authority
FR
France
Prior art keywords
field effect
effect transistor
carbon nanotubes
nanotubes
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0755391A
Other languages
English (en)
Other versions
FR2916902A1 (fr
Inventor
Jean Philippe Bourgoin
Marcelo Goffman
Vincent Derycke
Nicolas Chimot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0755391A priority Critical patent/FR2916902B1/fr
Priority to US11/893,673 priority patent/US9502659B2/en
Priority to PCT/FR2008/050894 priority patent/WO2008152281A2/fr
Priority to EP08805838A priority patent/EP2150995A2/fr
Publication of FR2916902A1 publication Critical patent/FR2916902A1/fr
Application granted granted Critical
Publication of FR2916902B1 publication Critical patent/FR2916902B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
FR0755391A 2007-05-31 2007-05-31 Transistor a effet de champ a nanotubes de carbone Expired - Fee Related FR2916902B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0755391A FR2916902B1 (fr) 2007-05-31 2007-05-31 Transistor a effet de champ a nanotubes de carbone
US11/893,673 US9502659B2 (en) 2007-05-31 2007-08-16 Carbon nanotube field effect transistor
PCT/FR2008/050894 WO2008152281A2 (fr) 2007-05-31 2008-05-23 Transistor a effet de champ a nanotubes de carbone
EP08805838A EP2150995A2 (fr) 2007-05-31 2008-05-23 Transistor a effet de champ a nanotubes de carbone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0755391A FR2916902B1 (fr) 2007-05-31 2007-05-31 Transistor a effet de champ a nanotubes de carbone

Publications (2)

Publication Number Publication Date
FR2916902A1 FR2916902A1 (fr) 2008-12-05
FR2916902B1 true FR2916902B1 (fr) 2009-07-17

Family

ID=38896175

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0755391A Expired - Fee Related FR2916902B1 (fr) 2007-05-31 2007-05-31 Transistor a effet de champ a nanotubes de carbone

Country Status (4)

Country Link
US (1) US9502659B2 (fr)
EP (1) EP2150995A2 (fr)
FR (1) FR2916902B1 (fr)
WO (1) WO2008152281A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005017967A2 (fr) * 2003-08-13 2005-02-24 Nantero, Inc. Structure dispositif a nanotube et son procede de production
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US8362760B2 (en) * 2008-02-19 2013-01-29 West Virginia University Research Corporation, Wvu Office Of Technology Transfer Stimulus responsive nanoparticles
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
US8445320B2 (en) * 2010-05-20 2013-05-21 International Business Machines Corporation Graphene channel-based devices and methods for fabrication thereof
FR2961320B1 (fr) * 2010-06-15 2013-04-26 Univ Paris Sud Composant electro-optique a nanotubes, circuit integre hybride optronique ou a lien optique integrant ce composant, et procede de fabrication.
US8288759B2 (en) * 2010-08-04 2012-10-16 Zhihong Chen Vertical stacking of carbon nanotube arrays for current enhancement and control
WO2012125727A1 (fr) * 2011-03-14 2012-09-20 Yale University Étalonnage de capteurs de nanostructure
US8557643B2 (en) * 2011-10-03 2013-10-15 International Business Machines Corporation Transistor device with reduced gate resistance
US8629010B2 (en) 2011-10-21 2014-01-14 International Business Machines Corporation Carbon nanotube transistor employing embedded electrodes
US8859439B1 (en) 2013-03-28 2014-10-14 International Business Machines Corporation Solution-assisted carbon nanotube placement with graphene electrodes
US9368723B2 (en) * 2014-02-11 2016-06-14 Wisconsin Alumni Research Foundation Dose-controlled, floating evaporative assembly of aligned carbon nanotubes for use in high performance field effect transistors
US9425405B1 (en) 2015-02-11 2016-08-23 Wisconsin Alumni Research Foundation Continuous, floating evaporative assembly of aligned carbon nanotubes
US10431453B2 (en) * 2016-11-28 2019-10-01 International Business Machines Corporation Electric field assisted placement of nanomaterials through dielectric engineering
US10873026B2 (en) 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
US10833284B1 (en) * 2019-06-04 2020-11-10 Carbonics Inc. Electrical devices having radiofrequency field effect transistors and the manufacture thereof
US10998424B2 (en) 2019-09-16 2021-05-04 International Business Machines Corporation Vertical metal-air transistor
US12439650B2 (en) * 2021-01-15 2025-10-07 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS fabrication methods for back-gate transistor
CN114420695B (zh) * 2022-03-30 2022-07-15 北京元芯碳基集成电路研究院 一种碳纳米管熔丝器件及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
AU8664901A (en) * 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
JP4338948B2 (ja) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 カーボンナノチューブ半導体素子の作製方法
WO2006075968A1 (fr) * 2005-01-17 2006-07-20 Shi-Li Zhang Separation de nanotubes metalliques et de nanotubes de carbone semi-conducteurs, et cnfet produits a partir de ceux-ci

Also Published As

Publication number Publication date
FR2916902A1 (fr) 2008-12-05
EP2150995A2 (fr) 2010-02-10
US9502659B2 (en) 2016-11-22
US20080296563A1 (en) 2008-12-04
WO2008152281A3 (fr) 2009-02-19
WO2008152281A2 (fr) 2008-12-18

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Legal Events

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Year of fee payment: 10

ST Notification of lapse

Effective date: 20180131