FR2930680B1 - Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces. - Google Patents

Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Info

Publication number
FR2930680B1
FR2930680B1 FR0802270A FR0802270A FR2930680B1 FR 2930680 B1 FR2930680 B1 FR 2930680B1 FR 0802270 A FR0802270 A FR 0802270A FR 0802270 A FR0802270 A FR 0802270A FR 2930680 B1 FR2930680 B1 FR 2930680B1
Authority
FR
France
Prior art keywords
thin film
photovoltaic cell
film silicon
manufacturing thin
silicon photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0802270A
Other languages
English (en)
Other versions
FR2930680A1 (fr
Inventor
Cedric Ducros
Frederic Sanchette
Christophe Secouard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0802270A priority Critical patent/FR2930680B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to US12/989,311 priority patent/US8288196B2/en
Priority to PCT/FR2009/000461 priority patent/WO2009133315A2/fr
Priority to KR1020107026108A priority patent/KR20100136554A/ko
Priority to EP09738349A priority patent/EP2281313A2/fr
Priority to BRPI0911637-0A priority patent/BRPI0911637A2/pt
Priority to JP2011505554A priority patent/JP2011519158A/ja
Publication of FR2930680A1 publication Critical patent/FR2930680A1/fr
Application granted granted Critical
Publication of FR2930680B1 publication Critical patent/FR2930680B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR0802270A 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces. Expired - Fee Related FR2930680B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0802270A FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.
PCT/FR2009/000461 WO2009133315A2 (fr) 2008-04-23 2009-04-20 Procede de fabrication d'une cellule photovoltaïque a base de silicium en couches minces
KR1020107026108A KR20100136554A (ko) 2008-04-23 2009-04-20 실리콘-계 박막 광기전성 셀의 제조방법
EP09738349A EP2281313A2 (fr) 2008-04-23 2009-04-20 Procede de fabrication d'une cellule photovoltaïque a base de silicium en couches minces
US12/989,311 US8288196B2 (en) 2008-04-23 2009-04-20 Process for fabricating a silicon-based thin-film photovoltaic cell
BRPI0911637-0A BRPI0911637A2 (pt) 2008-04-23 2009-04-20 processo de fabricação de uma célula fotovoltaica à base de silício em camadas
JP2011505554A JP2011519158A (ja) 2008-04-23 2009-04-20 シリコン系薄膜太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0802270A FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Publications (2)

Publication Number Publication Date
FR2930680A1 FR2930680A1 (fr) 2009-10-30
FR2930680B1 true FR2930680B1 (fr) 2010-08-27

Family

ID=40342466

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0802270A Expired - Fee Related FR2930680B1 (fr) 2008-04-23 2008-04-23 Procede de fabrication d'une cellule photovoltaique a base de silicium en couches minces.

Country Status (7)

Country Link
US (1) US8288196B2 (fr)
EP (1) EP2281313A2 (fr)
JP (1) JP2011519158A (fr)
KR (1) KR20100136554A (fr)
BR (1) BRPI0911637A2 (fr)
FR (1) FR2930680B1 (fr)
WO (1) WO2009133315A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484166B (zh) * 2009-09-07 2015-09-02 东电电子太阳能股份公司 制造光伏电池结构的方法
US9018517B2 (en) 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
KR101879363B1 (ko) 2017-01-17 2018-08-16 엘지전자 주식회사 태양 전지 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416190B1 (fr) * 1989-09-07 1994-06-01 International Business Machines Corporation Méthode de passivation des miroirs des diodes laser à semi-conducteur
WO1992013359A1 (fr) * 1991-01-17 1992-08-06 Crosspoint Solutions, Inc. Structure amelioree de circuit anti-fusion s'utilisant dans un circuit prediffuse programmable par l'utilisateur et procede de fabrication de ladite structure
JPH06204137A (ja) * 1992-10-19 1994-07-22 Samsung Electron Co Ltd 多結晶シリコン薄膜の製造方法
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
JP3814432B2 (ja) * 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
AU2002951838A0 (en) * 2002-10-08 2002-10-24 Unisearch Limited Method of preparation for polycrystalline semiconductor films
WO2006025820A1 (fr) * 2004-08-26 2006-03-09 Midwest Research Institute Procede de passivation de surface de silicium cristallin
FR2883663B1 (fr) * 2005-03-22 2007-05-11 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a base de silicium en couche mince.
US8795854B2 (en) * 2005-08-01 2014-08-05 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

Also Published As

Publication number Publication date
WO2009133315A2 (fr) 2009-11-05
WO2009133315A3 (fr) 2010-11-11
FR2930680A1 (fr) 2009-10-30
JP2011519158A (ja) 2011-06-30
KR20100136554A (ko) 2010-12-28
EP2281313A2 (fr) 2011-02-09
US8288196B2 (en) 2012-10-16
BRPI0911637A2 (pt) 2018-03-27
US20110223711A1 (en) 2011-09-15

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Legal Events

Date Code Title Description
TQ Partial transmission of property
TP Transmission of property

Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERG, FR

Effective date: 20111013

ST Notification of lapse

Effective date: 20131231