FR2935533B1 - Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. - Google Patents

Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.

Info

Publication number
FR2935533B1
FR2935533B1 FR0855745A FR0855745A FR2935533B1 FR 2935533 B1 FR2935533 B1 FR 2935533B1 FR 0855745 A FR0855745 A FR 0855745A FR 0855745 A FR0855745 A FR 0855745A FR 2935533 B1 FR2935533 B1 FR 2935533B1
Authority
FR
France
Prior art keywords
capacitor
topologic
design
dimensional
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0855745A
Other languages
English (en)
Other versions
FR2935533A1 (fr
Inventor
Eric Picollet
Favre Claire Deglise
Remi Magand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0855745A priority Critical patent/FR2935533B1/fr
Priority to US13/060,152 priority patent/US20110149468A1/en
Priority to PCT/FR2009/051620 priority patent/WO2010023401A1/fr
Publication of FR2935533A1 publication Critical patent/FR2935533A1/fr
Application granted granted Critical
Publication of FR2935533B1 publication Critical patent/FR2935533B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Ce condensateur tridimensionnel comprend un empilement d'électrodes superposées formées dans des niveaux de métallisation respectives d'un circuit intégré. Il comporte en outre au moins deux électrodes additionnelles superposées formées au dessus dudit empilement, les électrodes additionnelles comprenant chacune un ensemble d'au moins un barreau (B, B') s'étendant selon une première direction. Une partie desdits barreaux comporte des ramifications (R) s'étendant selon une deuxième direction.
FR0855745A 2008-08-27 2008-08-27 Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. Expired - Fee Related FR2935533B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0855745A FR2935533B1 (fr) 2008-08-27 2008-08-27 Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.
US13/060,152 US20110149468A1 (en) 2008-08-27 2009-08-24 Three-dimensional capacitor and topological design method for such a capacitor
PCT/FR2009/051620 WO2010023401A1 (fr) 2008-08-27 2009-08-24 Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855745A FR2935533B1 (fr) 2008-08-27 2008-08-27 Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.

Publications (2)

Publication Number Publication Date
FR2935533A1 FR2935533A1 (fr) 2010-03-05
FR2935533B1 true FR2935533B1 (fr) 2011-07-22

Family

ID=40459728

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855745A Expired - Fee Related FR2935533B1 (fr) 2008-08-27 2008-08-27 Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.

Country Status (3)

Country Link
US (1) US20110149468A1 (fr)
FR (1) FR2935533B1 (fr)
WO (1) WO2010023401A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5947580B2 (ja) * 2012-03-23 2016-07-06 ローム株式会社 デカップルキャパシタセル、セルベースｉｃ、セルベースｉｃのレイアウトシステムおよびレイアウト方法
CN103367308A (zh) * 2012-03-31 2013-10-23 中芯国际集成电路制造(上海)有限公司 金属-氧化物-金属电容器
US9209240B2 (en) * 2012-10-16 2015-12-08 Sandisk Technologies Inc. Metal-oxide-metal capacitor structure
US9331013B2 (en) * 2013-03-14 2016-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
CA2395900A1 (fr) * 2002-08-12 2004-02-12 Christopher Andrew Devries Condensateurs verticaux adaptes
US6819542B2 (en) * 2003-03-04 2004-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitor structure for an integrated circuit
FR2870042B1 (fr) * 2004-05-07 2006-09-29 St Microelectronics Sa Structure capacitive de circuit integre
JP4343085B2 (ja) * 2004-10-26 2009-10-14 Ｎｅｃエレクトロニクス株式会社 半導体装置
US7202548B2 (en) * 2005-09-13 2007-04-10 Via Technologies, Inc. Embedded capacitor with interdigitated structure
TWI296852B (en) * 2005-12-07 2008-05-11 Winbond Electronics Corp Interdigitized capacitor
US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
TW200901247A (en) * 2007-06-27 2009-01-01 Ind Tech Res Inst Interdigital capacitor
US7990676B2 (en) * 2007-10-10 2011-08-02 Advanced Micro Devices, Inc. Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same

Also Published As

Publication number Publication date
WO2010023401A1 (fr) 2010-03-04
FR2935533A1 (fr) 2010-03-05
US20110149468A1 (en) 2011-06-23

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150430