FR2953328B1 - Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques - Google Patents

Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques

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Publication number
FR2953328B1
FR2953328B1 FR0958547A FR0958547A FR2953328B1 FR 2953328 B1 FR2953328 B1 FR 2953328B1 FR 0958547 A FR0958547 A FR 0958547A FR 0958547 A FR0958547 A FR 0958547A FR 2953328 B1 FR2953328 B1 FR 2953328B1
Authority
FR
France
Prior art keywords
layer
components
heterostructure
optoelectronic
electronic power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0958547A
Other languages
English (en)
Other versions
FR2953328A1 (fr
Inventor
Jean-Marc Bethoux
Fabrice Letertre
Chris Werkhoven
Ionut Radu
Oleg Kononchuck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0958547A priority Critical patent/FR2953328B1/fr
Priority to US12/956,675 priority patent/US20110127581A1/en
Priority to US13/513,151 priority patent/US8759881B2/en
Priority to CN201080054245.2A priority patent/CN102640257B/zh
Priority to PCT/EP2010/068614 priority patent/WO2011067276A1/fr
Publication of FR2953328A1 publication Critical patent/FR2953328A1/fr
Application granted granted Critical
Publication of FR2953328B1 publication Critical patent/FR2953328B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un support pour l'épitaxie d'une couche (4) d'un matériau de composition AlxInyGa(1-x-y)N, où 0≤x≤1, 0≤y≤1 et x+y≤1, comprenant : - un substrat support (10), - une couche de collage (2), - une couche germe (3) monocristalline pour la croissance épitaxiale de ladite couche (4), dans lequel : - le matériau du substrat support (10) présente une résistivité électrique inférieure à 10-3 ohm.cm et une conductivité thermique supérieure à 100 W.m-1.K-1, - la couche germe (3) est en un matériau de composition AlxInyGa(1-x-y)N, où 0≤x≤1, 0≤y≤1 et x+y≤1, - la résistance de contact spécifique entre la couche germe (3) et la couche de collage (2) est inférieure ou égale à 0,1 ohm.cm-2, - les matériaux du substrat support, de la couche de collage et de la couche germe sont réfractaires à une température supérieure à 750 °C.
FR0958547A 2009-12-01 2009-12-01 Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques Active FR2953328B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0958547A FR2953328B1 (fr) 2009-12-01 2009-12-01 Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
US12/956,675 US20110127581A1 (en) 2009-12-01 2010-11-30 Heterostructure for electronic power components, optoelectronic or photovoltaic components
US13/513,151 US8759881B2 (en) 2009-12-01 2010-12-01 Heterostructure for electronic power components, optoelectronic or photovoltaic components
CN201080054245.2A CN102640257B (zh) 2009-12-01 2010-12-01 用于电子功率组件、光电组件或者光伏组件的异质结构
PCT/EP2010/068614 WO2011067276A1 (fr) 2009-12-01 2010-12-01 Hétérostructure pour composants d'alimentation électroniques, composants optoélectroniques ou photovoltaïques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0958547A FR2953328B1 (fr) 2009-12-01 2009-12-01 Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques

Publications (2)

Publication Number Publication Date
FR2953328A1 FR2953328A1 (fr) 2011-06-03
FR2953328B1 true FR2953328B1 (fr) 2012-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR0958547A Active FR2953328B1 (fr) 2009-12-01 2009-12-01 Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques

Country Status (4)

Country Link
US (2) US20110127581A1 (fr)
CN (1) CN102640257B (fr)
FR (1) FR2953328B1 (fr)
WO (1) WO2011067276A1 (fr)

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Also Published As

Publication number Publication date
WO2011067276A1 (fr) 2011-06-09
FR2953328A1 (fr) 2011-06-03
CN102640257B (zh) 2015-04-15
US20110127581A1 (en) 2011-06-02
CN102640257A (zh) 2012-08-15
US8759881B2 (en) 2014-06-24
US20120241821A1 (en) 2012-09-27

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