FR2953643B1 - Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante - Google Patents

Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante

Info

Publication number
FR2953643B1
FR2953643B1 FR0958746A FR0958746A FR2953643B1 FR 2953643 B1 FR2953643 B1 FR 2953643B1 FR 0958746 A FR0958746 A FR 0958746A FR 0958746 A FR0958746 A FR 0958746A FR 2953643 B1 FR2953643 B1 FR 2953643B1
Authority
FR
France
Prior art keywords
enterree
seoi
insulating layer
under
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0958746A
Other languages
English (en)
Other versions
FR2953643A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0958746A priority Critical patent/FR2953643B1/fr
Priority to JP2010245443A priority patent/JP2011124552A/ja
Priority to SG2010080570A priority patent/SG172532A1/en
Priority to EP10189839.3A priority patent/EP2333838A3/fr
Priority to CN201010540988.2A priority patent/CN102088028B/zh
Priority to TW099138481A priority patent/TWI452679B/zh
Priority to KR1020100110977A priority patent/KR101230716B1/ko
Priority to US12/946,135 priority patent/US8664712B2/en
Publication of FR2953643A1 publication Critical patent/FR2953643A1/fr
Application granted granted Critical
Publication of FR2953643B1 publication Critical patent/FR2953643B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6894—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having one gate at least partly in a trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
FR0958746A 2009-12-08 2009-12-08 Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante Active FR2953643B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0958746A FR2953643B1 (fr) 2009-12-08 2009-12-08 Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
JP2010245443A JP2011124552A (ja) 2009-12-08 2010-11-01 絶縁層の下に埋め込まれた第２のコントロールゲートを有するＳｅＯＩ上のフラッシュメモリセル
SG2010080570A SG172532A1 (en) 2009-12-08 2010-11-02 Flash memory cell on seoi having a second control gate buried under the insulating layer
EP10189839.3A EP2333838A3 (fr) 2009-12-08 2010-11-03 Cellule memoire flash sur SeOi
CN201010540988.2A CN102088028B (zh) 2009-12-08 2010-11-08 闪存存储器单元及其控制方法，存储器阵列及其构造方法
TW099138481A TWI452679B (zh) 2009-12-08 2010-11-09 絕緣體上覆半導體上具有埋設於絕緣層下之第二控制閘極的快閃記憶體晶胞
KR1020100110977A KR101230716B1 (ko) 2009-12-08 2010-11-09 절연 층 아래에 매립된 제 2 제어 게이트를 갖는 ＳｅＯＩ상의 플래시 메모리 셀
US12/946,135 US8664712B2 (en) 2009-12-08 2010-11-15 Flash memory cell on SeOI having a second control gate buried under the insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0958746A FR2953643B1 (fr) 2009-12-08 2009-12-08 Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante

Publications (2)

Publication Number Publication Date
FR2953643A1 FR2953643A1 (fr) 2011-06-10
FR2953643B1 true FR2953643B1 (fr) 2012-07-27

Family

ID=42318198

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0958746A Active FR2953643B1 (fr) 2009-12-08 2009-12-08 Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante

Country Status (8)

Country Link
US (1) US8664712B2 (fr)
EP (1) EP2333838A3 (fr)
JP (1) JP2011124552A (fr)
KR (1) KR101230716B1 (fr)
CN (1) CN102088028B (fr)
FR (1) FR2953643B1 (fr)
SG (1) SG172532A1 (fr)
TW (1) TWI452679B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2953643B1 (fr) * 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2987710B1 (fr) 2012-03-05 2017-04-28 Soitec Silicon On Insulator Architecture de table de correspondance
US9466536B2 (en) 2013-03-27 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator integrated circuit with back side gate
US8748245B1 (en) 2013-03-27 2014-06-10 Io Semiconductor, Inc. Semiconductor-on-insulator integrated circuit with interconnect below the insulator
US9478507B2 (en) 2013-03-27 2016-10-25 Qualcomm Incorporated Integrated circuit assembly with faraday cage
US20170338343A1 (en) * 2016-05-23 2017-11-23 Globalfoundries Inc. High-voltage transistor device
US9825185B1 (en) * 2016-12-19 2017-11-21 Globalfoudnries Singapore Pte. Ltd. Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structures
US10374092B2 (en) * 2017-04-17 2019-08-06 Globalfoundries Inc. Power amplifier ramping and power control with forward and reverse back-gate bias
WO2019132892A1 (fr) * 2017-12-27 2019-07-04 Intel Corporation Transistors à effet de champ à grilles enterrées et leurs procédés de fabrication
US11183572B2 (en) * 2020-04-20 2021-11-23 Taiwan Semiconductor Manufacturing Company Limited Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same
CN113517352B (zh) * 2021-06-01 2024-08-06 上海华力集成电路制造有限公司 半浮栅器件的制造方法

Family Cites Families (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
JPS6488993A (en) 1987-09-29 1989-04-03 Nec Corp Semiconductor memory
KR100213602B1 (ko) 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US5028810A (en) 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
US5146426A (en) * 1990-11-08 1992-09-08 North American Philips Corp. Electrically erasable and programmable read only memory with trench structure
JPH04345064A (ja) 1991-05-22 1992-12-01 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2717740B2 (ja) 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
JPH05167073A (ja) 1991-12-17 1993-07-02 Hitachi Ltd 半導体集積回路装置及びその製造方法
DE69328743T2 (de) 1992-03-30 2000-09-07 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiteranordnung
US5325054A (en) 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP3488730B2 (ja) 1993-11-05 2004-01-19 株式会社ルネサステクノロジ 半導体集積回路装置
US5506431A (en) * 1994-05-16 1996-04-09 Thomas; Mammen Double poly trenched channel accelerated tunneling electron (DPT-CATE) cell, for memory applications
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
JP3003088B2 (ja) 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JP3549602B2 (ja) 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JPH08255846A (ja) 1995-03-17 1996-10-01 Nippondenso Co Ltd 半導体装置及びその製造方法
ATE219599T1 (de) 1995-03-31 2002-07-15 Infineon Technologies Ag Nieder-leistungs-leseverstärker des typs gain speicherzelle
JP3288554B2 (ja) 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
JPH0982814A (ja) 1995-07-10 1997-03-28 Denso Corp 半導体集積回路装置及びその製造方法
US6787844B2 (en) 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JP3265178B2 (ja) 1996-02-20 2002-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JPH10125064A (ja) 1996-10-14 1998-05-15 Toshiba Corp 記憶装置
JP2877103B2 (ja) * 1996-10-21 1999-03-31 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
JPH10208484A (ja) 1997-01-29 1998-08-07 Mitsubishi Electric Corp 半導体記憶装置のデータ読出回路及び半導体記憶装置
US5889293A (en) 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
US6037808A (en) 1997-12-24 2000-03-14 Texas Instruments Incorporated Differential SOI amplifiers having tied floating body connections
US6147377A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device
JP3699823B2 (ja) 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6072217A (en) 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
FR2779869B1 (fr) 1998-06-15 2003-05-16 Commissariat Energie Atomique Circuit integre de type soi a capacite de decouplage, et procede de realisation d'un tel circuit
JP3303789B2 (ja) * 1998-09-01 2002-07-22 日本電気株式会社 フラッシュメモリ、その書き込み・消去方法
JP2000174241A (ja) * 1998-12-10 2000-06-23 Toshiba Corp 不揮発性半導体記憶装置
US6826730B2 (en) 1998-12-15 2004-11-30 Texas Instruments Incorporated System and method for controlling current in an integrated circuit
JP3456913B2 (ja) 1998-12-25 2003-10-14 株式会社東芝 半導体装置
JP2000260887A (ja) * 1999-03-08 2000-09-22 Nec Corp 不揮発性半導体記憶装置およびその製造方法
US6372600B1 (en) 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
US6476462B2 (en) 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
TW472366B (en) * 2000-03-22 2002-01-11 Taiwan Semiconductor Mfg ETOX cell with multi-layer nano-si-crystal dots as floating gate and method of making
US6300218B1 (en) 2000-05-08 2001-10-09 International Business Machines Corporation Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
US6350653B1 (en) 2000-10-12 2002-02-26 International Business Machines Corporation Embedded DRAM on silicon-on-insulator substrate
DE10054172C2 (de) * 2000-11-02 2002-12-05 Infineon Technologies Ag Halbleiter-Speicherzelle mit einer in einem Graben angeordneten Floating-Gate-Elektrode und Verfahren zu deren Herstellung
JP2002164544A (ja) 2000-11-28 2002-06-07 Sony Corp 半導体装置
US6614190B2 (en) 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP3982218B2 (ja) 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
JP3884266B2 (ja) 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6611023B1 (en) 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
JP4815695B2 (ja) * 2001-05-24 2011-11-16 ソニー株式会社 不揮発性半導体メモリ装置の動作方法
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
JP3880818B2 (ja) * 2001-08-30 2007-02-14 シャープ株式会社 メモリ膜、メモリ素子、半導体記憶装置、半導体集積回路および携帯電子機器
JP2003188383A (ja) * 2001-12-14 2003-07-04 Hitachi Ltd 半導体集積回路装置及びその製造方法
US6498057B1 (en) 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
EP1357603A3 (fr) * 2002-04-18 2004-01-14 Innovative Silicon SA Dispositif semiconducteur
US6838723B2 (en) 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7710771B2 (en) * 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP2004179506A (ja) 2002-11-28 2004-06-24 Seiko Epson Corp Ｓｏｉ構造を有する半導体基板及びその製造方法及び半導体装置
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
JP2004303499A (ja) 2003-03-31 2004-10-28 Hitachi High-Technologies Corp イオン注入装置およびイオン注入方法
US7297634B2 (en) * 2003-06-06 2007-11-20 Marvell World Trade Ltd. Method and apparatus for semiconductor device and semiconductor memory device
JP4077381B2 (ja) 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US6965143B2 (en) * 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
JP2005158952A (ja) 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
US7109532B1 (en) 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
US20050255666A1 (en) 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
US7112997B1 (en) 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4795653B2 (ja) 2004-06-15 2011-10-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7196921B2 (en) 2004-07-19 2007-03-27 Silicon Storage Technology, Inc. High-speed and low-power differential non-volatile content addressable memory cell and array
US7560361B2 (en) 2004-08-12 2009-07-14 International Business Machines Corporation Method of forming gate stack for semiconductor electronic device
JP3962769B2 (ja) * 2004-11-01 2007-08-22 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその書込方法
KR100654341B1 (ko) * 2004-12-08 2006-12-08 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
KR100663359B1 (ko) 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
US20060267064A1 (en) 2005-05-31 2006-11-30 Infineon Technologies Ag Semiconductor memory device
CN100395843C (zh) 2005-06-02 2008-06-18 复旦大学 高速低功耗电流灵敏放大器
US7402850B2 (en) * 2005-06-21 2008-07-22 Micron Technology, Inc. Back-side trapped non-volatile memory device
US7274618B2 (en) 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
JP4967264B2 (ja) 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP4800700B2 (ja) 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
US7314794B2 (en) 2005-08-08 2008-01-01 International Business Machines Corporation Low-cost high-performance planar back-gate CMOS
JP4413841B2 (ja) 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4822791B2 (ja) 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
JP5054919B2 (ja) 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100735613B1 (ko) 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
US7304903B2 (en) 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
JP4762036B2 (ja) * 2006-04-14 2011-08-31 株式会社東芝 半導体装置
US20090096936A1 (en) 2006-04-24 2009-04-16 Panasonic Corporation Receiving device, electronic device using the same, and receiving method
US7494902B2 (en) 2006-06-23 2009-02-24 Interuniversitair Microelektronica Centrum Vzw (Imec) Method of fabricating a strained multi-gate transistor
JP2008004831A (ja) * 2006-06-23 2008-01-10 Denso Corp 不揮発性メモリトランジスタおよびその駆動方法
KR100843055B1 (ko) 2006-08-17 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
JP4250649B2 (ja) 2006-09-26 2009-04-08 株式会社東芝 不揮発性半導体記憶素子及び不揮発性半導体記憶装置
US7560344B2 (en) 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
JP2008130670A (ja) 2006-11-17 2008-06-05 Seiko Epson Corp 半導体装置、論理回路および電子機器
JP2008140912A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 不揮発性半導体記憶装置
JP5057430B2 (ja) 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
JP4869088B2 (ja) * 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
JP5019436B2 (ja) 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5594927B2 (ja) 2007-04-11 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
FR2915024A1 (fr) 2007-04-12 2008-10-17 St Microelectronics Crolles 2 Procede de fabrication permettant l'homogeneisation de l'environnement de transistors et dispositif associe
US7729149B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
EP2015362A1 (fr) 2007-06-04 2009-01-14 STMicroelectronics (Crolles 2) SAS Matrice à semi-conducteurs et procédé de fabrication correspondant
US7449922B1 (en) 2007-06-15 2008-11-11 Arm Limited Sensing circuitry and method of detecting a change in voltage on at least one input line
US7759714B2 (en) 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
FR2918823B1 (fr) 2007-07-13 2009-10-16 Ecole Centrale De Lyon Etablis Cellule logique reconfigurable a base de transistors mosfet double grille
FR2919112A1 (fr) 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
JP5035345B2 (ja) 2007-08-30 2012-09-26 富士通セミコンダクター株式会社 イオン注入装置、基板クランプ機構、及びイオン注入方法
JP2009076680A (ja) * 2007-09-20 2009-04-09 Toshiba Corp 不揮発性半導体記憶装置及びその動作方法
KR100884344B1 (ko) * 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
US20090101940A1 (en) * 2007-10-19 2009-04-23 Barrows Corey K Dual gate fet structures for flexible gate array design methodologies
DE102007052097B4 (de) 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
FR2925223B1 (fr) 2007-12-18 2010-02-19 Soitec Silicon On Insulator Procede d'assemblage avec marques enterrees
US7593265B2 (en) 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
DE112008003726B4 (de) 2008-02-20 2023-09-21 Soitec Oxidation nach Oxidauflösung
US7973364B2 (en) * 2008-02-27 2011-07-05 Globalfoundries Inc. Method for forming a one-transistor memory cell and related structure
JP6053250B2 (ja) 2008-06-12 2016-12-27 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
WO2010007478A1 (fr) 2008-06-13 2010-01-21 Yale University Dispositifs à semi-conducteurs à oxyde de métal complémentaire améliorés
US8012814B2 (en) 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
US8120110B2 (en) 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
KR101623958B1 (ko) 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101522400B1 (ko) 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
FR2953643B1 (fr) * 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2955195B1 (fr) * 2010-01-14 2012-03-09 Soitec Silicon On Insulator Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi
FR2957449B1 (fr) * 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
FR2958441B1 (fr) * 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi

Also Published As

Publication number Publication date
EP2333838A2 (fr) 2011-06-15
CN102088028A (zh) 2011-06-08
EP2333838A3 (fr) 2014-03-19
CN102088028B (zh) 2014-10-08
JP2011124552A (ja) 2011-06-23
US8664712B2 (en) 2014-03-04
SG172532A1 (en) 2011-07-28
KR101230716B1 (ko) 2013-02-07
FR2953643A1 (fr) 2011-06-10
TWI452679B (zh) 2014-09-11
US20110134698A1 (en) 2011-06-09
KR20110065321A (ko) 2011-06-15
TW201131748A (en) 2011-09-16

Similar Documents

Publication Publication Date Title
FR2953643B1 (fr) Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
BRPI0821113A2 (pt) Laminado de pilha solar compreendendo uma camada semicondutora
EP2235747A4 (fr) Boîtier de circuit intégré à cavité in-situ
TWI368316B (en) Multi-trapping layer flash memory cell
BRPI0916925A2 (pt) camada superior zoneada
BRPI0916910A2 (pt) camada superior zoneada
DE112008000371B8 (de) Halbleiterelement-Struktur mit Latentwärmespeichermaterial
FR2946073B1 (fr) Abri de parking equipe de panneaux solaires photovoltaiques.
DE602006011634D1 (de) Konstruktion mit verbindungsschicht
PT2299499E (pt) Unidade fotovoltaica flutuante
BRPI1010146A2 (pt) telha fotovoltaica para telhado
EP2145311A4 (fr) Vitrine navigable en 3d photogénérée
EP2374160A4 (fr) Cellule solaire à contact arrière avec des zones formées dopées de polysilicium
EP2095430A4 (fr) Cellule solaire
DE502007002839D1 (de) Geschirrspüler mit Wärmerückgewinnung
BRPI0917642A2 (pt) esquema de potência dual em circuito de memória.
EP2099090A4 (fr) Cellule solaire sensibilisée à un colorant
DE602007009916D1 (de) Halbleiterspeichersystem mit Schnappschussfunktion
PL2638742T3 (pl) Umożliwienie oszczędzania energii w warstwie fizycznej
EP1917558A4 (fr) Affichages a cellules photovoltaiques integrees
FR2957193B1 (fr) Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante
DE602006015648D1 (de) Halbleiterbauelement mit einer dielektrischen supergitter-grenzflächenschicht
EP2301658A4 (fr) Réacteur à lit fluidisé à deux zones
PL1883119T3 (pl) Półprzewodnikowa struktura warstwowa z supersiecią
ATE488617T1 (de) Al-ti-ru-n-c hartstoffschicht

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17