FR2956516B1 - Cellule de memoire vive sram a dix transistors - Google Patents

Cellule de memoire vive sram a dix transistors

Info

Publication number
FR2956516B1
FR2956516B1 FR1051043A FR1051043A FR2956516B1 FR 2956516 B1 FR2956516 B1 FR 2956516B1 FR 1051043 A FR1051043 A FR 1051043A FR 1051043 A FR1051043 A FR 1051043A FR 2956516 B1 FR2956516 B1 FR 2956516B1
Authority
FR
France
Prior art keywords
sram
transistors
memory cell
triple memory
triple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1051043A
Other languages
English (en)
Other versions
FR2956516A1 (fr
Inventor
Fady Abouzeid
Sylvain Clerc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1051043A priority Critical patent/FR2956516B1/fr
Priority to PCT/FR2011/050306 priority patent/WO2011098743A1/fr
Priority to US13/578,261 priority patent/US8867264B2/en
Publication of FR2956516A1 publication Critical patent/FR2956516A1/fr
Application granted granted Critical
Publication of FR2956516B1 publication Critical patent/FR2956516B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR1051043A 2010-02-15 2010-02-15 Cellule de memoire vive sram a dix transistors Expired - Fee Related FR2956516B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1051043A FR2956516B1 (fr) 2010-02-15 2010-02-15 Cellule de memoire vive sram a dix transistors
PCT/FR2011/050306 WO2011098743A1 (fr) 2010-02-15 2011-02-14 Cellule de memoire vive sram a dix transistors
US13/578,261 US8867264B2 (en) 2010-02-15 2011-02-14 SRAM read-write memory cell having ten transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051043A FR2956516B1 (fr) 2010-02-15 2010-02-15 Cellule de memoire vive sram a dix transistors

Publications (2)

Publication Number Publication Date
FR2956516A1 FR2956516A1 (fr) 2011-08-19
FR2956516B1 true FR2956516B1 (fr) 2012-12-07

Family

ID=42332780

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051043A Expired - Fee Related FR2956516B1 (fr) 2010-02-15 2010-02-15 Cellule de memoire vive sram a dix transistors

Country Status (3)

Country Link
US (1) US8867264B2 (fr)
FR (1) FR2956516B1 (fr)
WO (1) WO2011098743A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3076051B1 (fr) * 2017-12-26 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit memoire
CN111554336A (zh) * 2019-02-12 2020-08-18 联华电子股份有限公司 静态随机存取存储器单元
JP7430425B2 (ja) * 2020-02-10 2024-02-13 国立研究開発法人科学技術振興機構 双安定回路および電子回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828597A (en) * 1997-04-02 1998-10-27 Texas Instruments Incorporated Low voltage, low power static random access memory cell
US7706172B2 (en) * 2004-04-01 2010-04-27 Arm Limited Layout of a SRAM memory cell
US7483332B2 (en) * 2005-08-11 2009-01-27 Texas Instruments Incorporated SRAM cell using separate read and write circuitry
US7768816B2 (en) * 2007-12-07 2010-08-03 International Business Machines Corporation SRAM cell design to improve stability

Also Published As

Publication number Publication date
WO2011098743A1 (fr) 2011-08-18
FR2956516A1 (fr) 2011-08-19
US20130051131A1 (en) 2013-02-28
US8867264B2 (en) 2014-10-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20151030