FR2964111B1 - Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote - Google Patents

Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote

Info

Publication number
FR2964111B1
FR2964111B1 FR1003495A FR1003495A FR2964111B1 FR 2964111 B1 FR2964111 B1 FR 2964111B1 FR 1003495 A FR1003495 A FR 1003495A FR 1003495 A FR1003495 A FR 1003495A FR 2964111 B1 FR2964111 B1 FR 2964111B1
Authority
FR
France
Prior art keywords
plates
formation
protective layer
nitrogen protective
collage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1003495A
Other languages
English (en)
Other versions
FR2964111A1 (fr
Inventor
Cioccio Lea Di
Laurent Vandroux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1003495A priority Critical patent/FR2964111B1/fr
Priority to US13/818,843 priority patent/US9064863B2/en
Priority to EP11758494.6A priority patent/EP2612353A1/fr
Priority to PCT/FR2011/000483 priority patent/WO2012028792A1/fr
Publication of FR2964111A1 publication Critical patent/FR2964111A1/fr
Application granted granted Critical
Publication of FR2964111B1 publication Critical patent/FR2964111B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
FR1003495A 2010-08-31 2010-08-31 Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote Expired - Fee Related FR2964111B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1003495A FR2964111B1 (fr) 2010-08-31 2010-08-31 Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote
US13/818,843 US9064863B2 (en) 2010-08-31 2011-08-31 Method for directly adhering two plates together, including a step of forming a temporary protective nitrogen
EP11758494.6A EP2612353A1 (fr) 2010-08-31 2011-08-31 Procédé de collage direct entre deux plaques, comprenant une étape de formation d'une couche de protection temporaire à base d'azote
PCT/FR2011/000483 WO2012028792A1 (fr) 2010-08-31 2011-08-31 Procédé de collage direct entre deux plaques, comprenant une étape de formation d'une couche de protection temporaire à base d'azote

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1003495A FR2964111B1 (fr) 2010-08-31 2010-08-31 Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote

Publications (2)

Publication Number Publication Date
FR2964111A1 FR2964111A1 (fr) 2012-03-02
FR2964111B1 true FR2964111B1 (fr) 2013-01-25

Family

ID=43859729

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1003495A Expired - Fee Related FR2964111B1 (fr) 2010-08-31 2010-08-31 Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote

Country Status (4)

Country Link
US (1) US9064863B2 (fr)
EP (1) EP2612353A1 (fr)
FR (1) FR2964111B1 (fr)
WO (1) WO2012028792A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106159114A (zh) * 2015-04-23 2016-11-23 上海和辉光电有限公司 柔性显示器的封装方法
US10892156B2 (en) * 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2896618B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite
CN101529578B (zh) * 2006-10-27 2012-01-11 硅绝缘体技术有限公司 用于转移在具有空位团的基片中形成的薄层的改进方法
JP2009135430A (ja) * 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7842583B2 (en) * 2007-12-27 2010-11-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8871610B2 (en) * 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Also Published As

Publication number Publication date
US9064863B2 (en) 2015-06-23
US20130217207A1 (en) 2013-08-22
EP2612353A1 (fr) 2013-07-10
FR2964111A1 (fr) 2012-03-02
WO2012028792A1 (fr) 2012-03-08

Similar Documents

Publication Publication Date Title
FR3000600B1 (fr) Procede microelectronique de gravure d'une couche
IL226477A0 (en) New salts and polymorphic forms
ZA201300533B (en) Pharmaceutically active compounds as axl inhibitors
EP2554278A4 (fr) Dispositif d'évacuation de pièce à usiner défectueuse
EP2542997A4 (fr) Protection d'informations utilisant des zones
EP2659975A4 (fr) Catalyseur d'élimination d'oxyde d'azote
EP2547744A4 (fr) Adhésifs thermofusibles durcissables à l'humidité à base de silanes
PT2654731T (pt) Formulações sólidas retard à base de dispersões sólidas
EP2149129A4 (fr) Procédé pour suivre des procédures cycliques effectuées sur un équipement de protection personnel (ppe)
DK2683242T3 (da) Effektive mængder (3ar)-1,3a,8-trimethyl-1,2,3,3a,8,8a-hexahydropyrrolo[2,3-b]indol-5-yl-phenylcarbamat og fremgangsmåder deraf
SI1977950T1 (sl) Postopek za ocenjevanje v povezavi z učinkom kakovosti postavitve tira
EP2531168A4 (fr) Polymères auto-adaptatifs pour formulations d'écrans solaires anhydres
EP2428423A4 (fr) Structure de protection d'équipement de véhicule pour véhicule ferroviaire
IT1400400B1 (it) Supporto per apparecchiature video-fotografiche
EP2800936A4 (fr) Plaque d'échangeur de chaleur et bloc de remplissage de plaques d'échangeur de chaleur
FR2993896B1 (fr) Procede de collage et de decollement entre deux pieces utilisant un adhesif charge
IT1404710B1 (it) Apparecchiatura per rilevare disomogeita'
GB2506870B (en) Method for the reduction of signalling traffic on mobile devices
EP2578747A4 (fr) Modules pour la construction de signalisations routières et/ou de surfaces de passage antidérapantes
EP2636326A4 (fr) Système de protection de la couture de la tige d'une chaussure
FR2964345B1 (fr) Procede d'affectation des roues d'un vehicule a leur localisation
TWI349973B (en) Method of fabricating alignment mark for cdim package structure
EP2869800A4 (fr) Protection de prise en charge d'une plaie de pression
TWM386531U (en) Heat dissipating base
PL3093011T3 (pl) Sposób otrzymywania bezpośrednio tabletkowalnego delta-mannitolu

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20160429