FR2969823B1 - Diode de shockley bidirectionnelle de type mesa - Google Patents

Diode de shockley bidirectionnelle de type mesa

Info

Publication number
FR2969823B1
FR2969823B1 FR1061208A FR1061208A FR2969823B1 FR 2969823 B1 FR2969823 B1 FR 2969823B1 FR 1061208 A FR1061208 A FR 1061208A FR 1061208 A FR1061208 A FR 1061208A FR 2969823 B1 FR2969823 B1 FR 2969823B1
Authority
FR
France
Prior art keywords
diode type
shockley diode
type mesa
bidirectional shockley
bidirectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1061208A
Other languages
English (en)
Other versions
FR2969823A1 (fr
Inventor
Yannick Hague
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1061208A priority Critical patent/FR2969823B1/fr
Priority to US13/332,395 priority patent/US8698227B2/en
Publication of FR2969823A1 publication Critical patent/FR2969823A1/fr
Application granted granted Critical
Publication of FR2969823B1 publication Critical patent/FR2969823B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
FR1061208A 2010-12-23 2010-12-23 Diode de shockley bidirectionnelle de type mesa Expired - Fee Related FR2969823B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1061208A FR2969823B1 (fr) 2010-12-23 2010-12-23 Diode de shockley bidirectionnelle de type mesa
US13/332,395 US8698227B2 (en) 2010-12-23 2011-12-21 Mesa-type bidirectional Shockley diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1061208A FR2969823B1 (fr) 2010-12-23 2010-12-23 Diode de shockley bidirectionnelle de type mesa

Publications (2)

Publication Number Publication Date
FR2969823A1 FR2969823A1 (fr) 2012-06-29
FR2969823B1 true FR2969823B1 (fr) 2013-09-20

Family

ID=44168044

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1061208A Expired - Fee Related FR2969823B1 (fr) 2010-12-23 2010-12-23 Diode de shockley bidirectionnelle de type mesa

Country Status (2)

Country Link
US (1) US8698227B2 (fr)
FR (1) FR2969823B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8835975B1 (en) 2013-05-10 2014-09-16 Ixys Corporation Ultra-fast breakover diode
FR3012256A1 (fr) 2013-10-17 2015-04-24 St Microelectronics Tours Sas Composant de puissance vertical haute tension
JP6405212B2 (ja) * 2014-12-03 2018-10-17 ルネサスエレクトロニクス株式会社 半導体装置
CN110690280B (zh) * 2019-09-09 2022-08-12 深圳市德芯半导体技术有限公司 一种可控硅器件及其制备方法
CN115148589B (zh) * 2021-03-29 2025-08-29 力特半导体（无锡）有限公司 半导体台面器件形成方法
CN115579287B (zh) * 2022-12-08 2023-02-28 江苏长晶科技股份有限公司 一种双向tvs器件的制造方法及结构
CN118412279A (zh) * 2023-01-30 2024-07-30 力特半导体（无锡）有限公司 用于半导体器件制造的通态峰值电压降低的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133569A (en) 1979-04-06 1980-10-17 Hitachi Ltd Semiconductor device
US4551353A (en) 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices
GB2207803A (en) 1987-07-27 1989-02-08 Philips Electronic Associated Junction breakdown prevention
FR2670338B1 (fr) * 1990-12-07 1993-03-26 Sgs Thomson Microelectronics Circuit de protection programmable et sa realisation monolithique.
GB2263579A (en) * 1992-01-24 1993-07-28 Texas Instruments Ltd An integrated circuit with intermingled electrodes
US5468976A (en) * 1993-08-27 1995-11-21 Evseev; Yury Semi conductor rectifying module
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
FR2753837B1 (fr) * 1996-09-25 1999-01-29 Composant de protection a retournement bidirectionnel a claquage en surface
US6956248B2 (en) * 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
US6407901B1 (en) * 1999-04-19 2002-06-18 Teccor Electronics, Lp Semiconductor device providing overvoltage and overcurrent protection for a line

Also Published As

Publication number Publication date
US8698227B2 (en) 2014-04-15
FR2969823A1 (fr) 2012-06-29
US20120161199A1 (en) 2012-06-28

Similar Documents

Publication Publication Date Title
DK2544738T3 (da) Injektionsanordning
EP2858132A4 (fr) Module de diode électroluminescente
EP2782148A4 (fr) Élément luminescent à semi-conducteur
EP2546882A4 (fr) Dispositif semi-conducteur
EP2541609A4 (fr) Dispositif semi-conducteur
BR112013016737A2 (pt) artigo absorvente.
EP2584616A4 (fr) Elément électroluminescent ultraviolet à semi-conducteur
EP2549534A4 (fr) Dispositif semiconducteur
EP2637493A4 (fr) Sécateurs à cliquet à mode double
BR112012026335A2 (pt) dispositivo fotovoltaico
EP2560215A4 (fr) Élément semi-conducteur photo-détecteur
EP2542282A4 (fr) Dispositif d'injection
IT1398416B1 (it) Dispositivo elettrovalvolare.
EP2551900A4 (fr) Dispositif semi-conducteur
FR2997173B1 (fr) Convertisseur thermo-electrique
EP2544240A4 (fr) Transistor semi-conducteur
IT1403159B1 (it) Dispositivo convertitore.
DE112013001987A5 (de) Laserdiodenvorrichtung
IT1401152B1 (it) Apparato di controllo per diodi led.
ITTO20110489A1 (it) Dispositivo di innesto.
ES1074161Y (es) Lavabo
PT2627166E (pt) Estufa com óptimo desempenho
EP2482315A4 (fr) Element semi-conducteur
FR2964299B3 (fr) Taille-haie
EP2555259A4 (fr) Élément émetteur de lumière à semi-conducteurs

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150831