FR2972077B1 - Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique - Google Patents

Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

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Publication number
FR2972077B1
FR2972077B1 FR1100553A FR1100553A FR2972077B1 FR 2972077 B1 FR2972077 B1 FR 2972077B1 FR 1100553 A FR1100553 A FR 1100553A FR 1100553 A FR1100553 A FR 1100553A FR 2972077 B1 FR2972077 B1 FR 2972077B1
Authority
FR
France
Prior art keywords
electronic component
graphene
manufacturing
conductive
semiconductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1100553A
Other languages
English (en)
Other versions
FR2972077A1 (fr
Inventor
Pierre Seneor
Bruno Dlubak
Clement Barraud
Aguilar Sergio Tatay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR1100553A priority Critical patent/FR2972077B1/fr
Priority to EP12705677.8A priority patent/EP2678883A1/fr
Priority to KR1020137024918A priority patent/KR20140085376A/ko
Priority to US14/001,483 priority patent/US20140070168A1/en
Priority to PCT/EP2012/053127 priority patent/WO2012113898A1/fr
Priority to SG2013064191A priority patent/SG192937A1/en
Publication of FR2972077A1 publication Critical patent/FR2972077A1/fr
Application granted granted Critical
Publication of FR2972077B1 publication Critical patent/FR2972077B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
FR1100553A 2011-02-24 2011-02-24 Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique Active FR2972077B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1100553A FR2972077B1 (fr) 2011-02-24 2011-02-24 Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique
EP12705677.8A EP2678883A1 (fr) 2011-02-24 2012-02-24 Composant électronique, procédé de fabrication et utilisation de graphène dans un composant électronique
KR1020137024918A KR20140085376A (ko) 2011-02-24 2012-02-24 전자 컴포넌트, 이의 제조 방법, 및 전자 컴포넌트에서의 그라핀의 사용 방법
US14/001,483 US20140070168A1 (en) 2011-02-24 2012-02-24 Electronic component, methods for manufacturing the same and use of graphene in an electronic component
PCT/EP2012/053127 WO2012113898A1 (fr) 2011-02-24 2012-02-24 Composant électronique, procédé de fabrication et utilisation de graphène dans un composant électronique
SG2013064191A SG192937A1 (en) 2011-02-24 2012-02-24 Electronic component and process for fabricating and using graphene in anelectronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1100553A FR2972077B1 (fr) 2011-02-24 2011-02-24 Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

Publications (2)

Publication Number Publication Date
FR2972077A1 FR2972077A1 (fr) 2012-08-31
FR2972077B1 true FR2972077B1 (fr) 2013-08-30

Family

ID=45757006

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1100553A Active FR2972077B1 (fr) 2011-02-24 2011-02-24 Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique

Country Status (6)

Country Link
US (1) US20140070168A1 (fr)
EP (1) EP2678883A1 (fr)
KR (1) KR20140085376A (fr)
FR (1) FR2972077B1 (fr)
SG (1) SG192937A1 (fr)
WO (1) WO2012113898A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2998092B1 (fr) * 2012-11-13 2014-11-07 Commissariat Energie Atomique Interposeur en graphene et procede de fabrication d'un tel interposeur
US9064077B2 (en) 2012-11-28 2015-06-23 Qualcomm Incorporated 3D floorplanning using 2D and 3D blocks
US9098666B2 (en) 2012-11-28 2015-08-04 Qualcomm Incorporated Clock distribution network for 3D integrated circuit
US9536840B2 (en) 2013-02-12 2017-01-03 Qualcomm Incorporated Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods
US9041448B2 (en) 2013-03-05 2015-05-26 Qualcomm Incorporated Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) and related methods
US9177890B2 (en) 2013-03-07 2015-11-03 Qualcomm Incorporated Monolithic three dimensional integration of semiconductor integrated circuits
US9171608B2 (en) 2013-03-15 2015-10-27 Qualcomm Incorporated Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods
RU2585404C1 (ru) * 2015-04-09 2016-05-27 Федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский государственный университет" (СПбГУ) Графеновый спиновый фильтр
KR102434699B1 (ko) 2015-07-31 2022-08-22 삼성전자주식회사 확산방지층을 포함하는 다층구조체 및 이를 구비하는 소자
KR20170080741A (ko) 2015-12-30 2017-07-11 에스케이하이닉스 주식회사 전자 장치
US10261139B2 (en) * 2016-02-19 2019-04-16 The United States Of America, As Represented By The Secretary Of The Navy Method of making a magnetic field sensor

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US6169303B1 (en) * 1998-01-06 2001-01-02 Hewlett-Packard Company Ferromagnetic tunnel junctions with enhanced magneto-resistance
JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
JP5061414B2 (ja) * 2001-09-27 2012-10-31 東レ株式会社 薄膜トランジスタ素子
WO2005083751A2 (fr) * 2004-02-20 2005-09-09 University Of Florida Research Foundation, Inc. Dispositif semi-conducteur et procede associe faisant appel a des contacts a nanotubes
US7832490B2 (en) * 2007-05-31 2010-11-16 Baker Hughes Incorporated Compositions containing shape-conforming materials and nanoparticles to enhance elastic modulus
KR101490111B1 (ko) * 2008-05-29 2015-02-06 삼성전자주식회사 에피택셜 그래핀을 포함하는 적층구조물, 상기적층구조물의 형성방법 및 상기 적층구조물을 포함하는전자 소자
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US7863700B2 (en) * 2008-06-30 2011-01-04 Qimonda Ag Magnetoresistive sensor with tunnel barrier and method
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KR20110071702A (ko) * 2009-12-21 2011-06-29 삼성전자주식회사 그라핀을 이용한 스핀밸브소자 및 그 제조방법과 스핀밸브소자를 포함하는 자성소자
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Also Published As

Publication number Publication date
US20140070168A1 (en) 2014-03-13
EP2678883A1 (fr) 2014-01-01
FR2972077A1 (fr) 2012-08-31
WO2012113898A1 (fr) 2012-08-30
KR20140085376A (ko) 2014-07-07
SG192937A1 (en) 2013-09-30

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