FR2972199B1 - Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules - Google Patents

Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules

Info

Publication number
FR2972199B1
FR2972199B1 FR1100614A FR1100614A FR2972199B1 FR 2972199 B1 FR2972199 B1 FR 2972199B1 FR 1100614 A FR1100614 A FR 1100614A FR 1100614 A FR1100614 A FR 1100614A FR 2972199 B1 FR2972199 B1 FR 2972199B1
Authority
FR
France
Prior art keywords
deposition
nanoparticles
high yield
producing high
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1100614A
Other languages
English (en)
Other versions
FR2972199A1 (fr
Inventor
Etienne Quesnel
Viviane Muffato
Stephanie Parola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1100614A priority Critical patent/FR2972199B1/fr
Priority to US14/002,588 priority patent/US20140001031A1/en
Priority to EP12710765.4A priority patent/EP2681758A1/fr
Priority to PCT/FR2012/000069 priority patent/WO2012117171A1/fr
Publication of FR2972199A1 publication Critical patent/FR2972199A1/fr
Application granted granted Critical
Publication of FR2972199B1 publication Critical patent/FR2972199B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
FR1100614A 2011-03-01 2011-03-01 Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules Expired - Fee Related FR2972199B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1100614A FR2972199B1 (fr) 2011-03-01 2011-03-01 Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules
US14/002,588 US20140001031A1 (en) 2011-03-01 2012-02-27 Device for producing nanoparticles at high efficiency, use of said device and method of depositing nanoparticles
EP12710765.4A EP2681758A1 (fr) 2011-03-01 2012-02-27 Dispositif de production de nanoparticules à haut rendement, utilisation dudit dispositif et procede de depot de nanoparticules
PCT/FR2012/000069 WO2012117171A1 (fr) 2011-03-01 2012-02-27 Dispositif de production de nanoparticules à haut rendement, utilisation dudit dispositif et procede de depot de nanoparticules

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1100614A FR2972199B1 (fr) 2011-03-01 2011-03-01 Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules

Publications (2)

Publication Number Publication Date
FR2972199A1 FR2972199A1 (fr) 2012-09-07
FR2972199B1 true FR2972199B1 (fr) 2015-04-24

Family

ID=45888426

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1100614A Expired - Fee Related FR2972199B1 (fr) 2011-03-01 2011-03-01 Dispositif de production de nanoparticules a haut rendement, utilisation du dispositif de production dans un dispositif de depot et procede de depot de nanoparticules

Country Status (4)

Country Link
US (1) US20140001031A1 (fr)
EP (1) EP2681758A1 (fr)
FR (1) FR2972199B1 (fr)
WO (1) WO2012117171A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103205723A (zh) * 2013-04-03 2013-07-17 同济大学 一种纳米超细粉的制备装置和方法
CN109506805B (zh) * 2018-12-17 2019-09-27 华中科技大学 一种基于磁纳米粒子的双差分温度测量方法
US11740173B2 (en) * 2020-05-29 2023-08-29 University Of New York Systems and methods for detecting particles
DE102020119279A1 (de) 2020-07-22 2022-01-27 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren und Vorrichtung zur Nanopartikelsynthese

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6013069A (ja) * 1983-07-01 1985-01-23 Sanyo Electric Co Ltd 薄膜形成方法
JPS62167877A (ja) * 1986-01-20 1987-07-24 Fujitsu Ltd プラズマ移動式マグネトロン型スパツタ装置
JPH0765168B2 (ja) * 1987-10-14 1995-07-12 日電アネルバ株式会社 平板マグネトロンスパッタ装置
DE69433208T2 (de) * 1993-10-22 2004-08-05 Manley, Barry, Boulder Verfahren und vorrichtung zum sputtern von magnetischem targetmaterial
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
GB2340845B (en) * 1998-08-19 2001-01-31 Kobe Steel Ltd Magnetron sputtering apparatus
US20070209927A1 (en) * 2004-07-09 2007-09-13 Masayuki Kamei Magnetron Sputtering Device In which Two Modes Of Magnetic Flux Distribution (Balanced Mode/Unbalanced Mode) Can Be Switched From One To The Other And Vice Versa, A Film Formation Method For Forming A Film From An Inorganic Film Formation Material Using The Device, And A Dual Mode Magnetron Sputtering Device And Film Formation Method For Forming A Film From An Inorganic Film Formation Material At A Low Temperature Using The Device
DE102006058078A1 (de) * 2006-12-07 2008-06-19 Systec System- Und Anlagentechnik Gmbh & Co. Kg Vakuumbeschichtungsanlage zur homogenen PVD-Beschichtung
WO2010120792A1 (fr) * 2009-04-17 2010-10-21 The Regents Of The University Of California Procédé et appareil pour dépôt à vitesse très élevée
JP5513529B2 (ja) * 2010-01-26 2014-06-04 キヤノンアネルバ株式会社 成膜方法、成膜装置、および該成膜装置の制御装置

Also Published As

Publication number Publication date
EP2681758A1 (fr) 2014-01-08
US20140001031A1 (en) 2014-01-02
FR2972199A1 (fr) 2012-09-07
WO2012117171A1 (fr) 2012-09-07

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Year of fee payment: 6

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Effective date: 20171130