FR2984603B1 - Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie. - Google Patents

Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Info

Publication number
FR2984603B1
FR2984603B1 FR1162017A FR1162017A FR2984603B1 FR 2984603 B1 FR2984603 B1 FR 2984603B1 FR 1162017 A FR1162017 A FR 1162017A FR 1162017 A FR1162017 A FR 1162017A FR 2984603 B1 FR2984603 B1 FR 2984603B1
Authority
FR
France
Prior art keywords
integrated
balun
type
integrated circuit
output paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1162017A
Other languages
English (en)
Other versions
FR2984603A1 (fr
Inventor
Floria Blanchet
Christophe Arricastres
Denis Pache
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1162017A priority Critical patent/FR2984603B1/fr
Priority to US13/707,736 priority patent/US9008603B2/en
Publication of FR2984603A1 publication Critical patent/FR2984603A1/fr
Application granted granted Critical
Publication of FR2984603B1 publication Critical patent/FR2984603B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F30/00—Fixed transformers not covered by group H01F19/00
    • H01F30/04—Fixed transformers not covered by group H01F19/00 having two or more secondary windings, each supplying a separate load, e.g. for radio set power supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H10W44/234—Arrangements for impedance matching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Transceivers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Coils Or Transformers For Communication (AREA)
FR1162017A 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie. Expired - Fee Related FR2984603B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1162017A FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.
US13/707,736 US9008603B2 (en) 2011-12-20 2012-12-07 Integrated circuit comprising an integrated transformer of the “BALUN” type with several input and output channels

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1162017A FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Publications (2)

Publication Number Publication Date
FR2984603A1 FR2984603A1 (fr) 2013-06-21
FR2984603B1 true FR2984603B1 (fr) 2014-01-17

Family

ID=46044794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1162017A Expired - Fee Related FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Country Status (2)

Country Link
US (1) US9008603B2 (fr)
FR (1) FR2984603B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928438B (zh) * 2014-04-04 2016-11-16 豪威科技(上海)有限公司 片上变压器、其版图结构、发射电路及收发电路
CN103957024B (zh) * 2014-04-18 2017-04-12 锐迪科科技有限公司 射频收发开关及其工作方法
TWI553676B (zh) * 2015-07-07 2016-10-11 瑞昱半導體股份有限公司 平面式變壓器及平衡不平衡轉換器之結構
CN105933011B (zh) * 2016-03-28 2019-03-26 豪威科技(上海)有限公司 功率合成器
DE102016110425B4 (de) * 2016-06-06 2023-07-20 X-Fab Semiconductor Foundries Gmbh Halbleitertransformator
US9843301B1 (en) 2016-07-14 2017-12-12 Northrop Grumman Systems Corporation Silicon transformer balun
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
WO2018198601A1 (fr) * 2017-04-26 2018-11-01 株式会社村田製作所 Filtre d'équilibrage
EP3471140B1 (fr) 2017-10-11 2022-05-18 Nxp B.V. Circuit intégré comprenant une pluralité de composants comprenant un transformateur
NL2021654B1 (en) 2018-09-18 2020-05-07 Prodrive Tech Bv Balun transformer
US11069476B2 (en) * 2018-10-08 2021-07-20 Vayyar Imaging Ltd. Self-contained device with planar overlapping coils
US12117556B2 (en) * 2021-06-28 2024-10-15 Texas Instruments Incorporated Field-aware metal fills for integrated circuit passive components
EP4350877A1 (fr) * 2022-10-05 2024-04-10 Nxp B.V. Déphaseur à zéro ou 180 degrés basé sur un auto-transformateur intégré
CN115881715B (zh) * 2023-02-09 2023-05-30 四川斯艾普电子科技有限公司 一种基于厚薄膜电路基板的lange电桥及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049589B2 (en) * 2008-09-10 2011-11-01 Advanced Semiconductor Engineering, Inc. Balun circuit manufactured by integrate passive device process
EP2204877A1 (fr) * 2008-12-30 2010-07-07 STMicroelectronics (Tours) SAS Réglage d'un transformateur à changement de mode (balun)
US8791775B2 (en) * 2010-03-30 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming high-attenuation balanced band-pass filter

Also Published As

Publication number Publication date
FR2984603A1 (fr) 2013-06-21
US9008603B2 (en) 2015-04-14
US20130157587A1 (en) 2013-06-20

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Effective date: 20150831