FR2985607B1 - Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. - Google Patents

Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. Download PDF

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Publication number
FR2985607B1
FR2985607B1 FR1250291A FR1250291A FR2985607B1 FR 2985607 B1 FR2985607 B1 FR 2985607B1 FR 1250291 A FR1250291 A FR 1250291A FR 1250291 A FR1250291 A FR 1250291A FR 2985607 B1 FR2985607 B1 FR 2985607B1
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FR
France
Prior art keywords
photovoltaic module
producing
etching stages
etching
stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1250291A
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English (en)
Other versions
FR2985607A1 (fr
Inventor
Nicolas Karst
Sevak Amtablian
Simon Perraud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat à l'Énergie Atomique et Aux Énergies Alternatives filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1250291A priority Critical patent/FR2985607B1/fr
Priority to CN201380013518.2A priority patent/CN104160508B/zh
Priority to US14/371,224 priority patent/US9583660B2/en
Priority to EP13704491.3A priority patent/EP2803088A1/fr
Priority to PCT/IB2013/050167 priority patent/WO2013105024A1/fr
Publication of FR2985607A1 publication Critical patent/FR2985607A1/fr
Application granted granted Critical
Publication of FR2985607B1 publication Critical patent/FR2985607B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
FR1250291A 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. Expired - Fee Related FR2985607B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1250291A FR2985607B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant.
CN201380013518.2A CN104160508B (zh) 2012-01-11 2013-01-09 具有两个刻蚀步骤p1和p3的用于制造光伏模块的方法及相应的光伏模块
US14/371,224 US9583660B2 (en) 2012-01-11 2013-01-09 Method for manufacturing a photovoltaic module with annealing for forming a photovoltaic layer and electrically conducting region
EP13704491.3A EP2803088A1 (fr) 2012-01-11 2013-01-09 Procede pour realiser un module photovoltaïque avec deux etapes de gravure p1 et p3 et module photovoltaïque correspondant
PCT/IB2013/050167 WO2013105024A1 (fr) 2012-01-11 2013-01-09 Procede pour realiser un module photovoltaïque avec deux etapes de gravure p1 et p3 et module photovoltaïque correspondant

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1250291 2012-01-11
FR1250291A FR2985607B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant.

Publications (2)

Publication Number Publication Date
FR2985607A1 FR2985607A1 (fr) 2013-07-12
FR2985607B1 true FR2985607B1 (fr) 2018-01-26

Family

ID=47716130

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250291A Expired - Fee Related FR2985607B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant.

Country Status (5)

Country Link
US (1) US9583660B2 (fr)
EP (1) EP2803088A1 (fr)
CN (1) CN104160508B (fr)
FR (1) FR2985607B1 (fr)
WO (1) WO2013105024A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3026228A1 (fr) * 2014-09-19 2016-03-25 Commissariat Energie Atomique Dispositif semi-photovoltaique semi-transparent a cellules en serie par interconnexion monolithique
KR102276847B1 (ko) * 2014-09-23 2021-07-14 삼성전자주식회사 가상 오브젝트 제공 방법 및 그 전자 장치
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
US11631777B2 (en) * 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
US12094663B2 (en) 2021-09-30 2024-09-17 Swift Solar Inc. Bypass diode interconnect for thin film solar modules
US12154727B2 (en) 2022-12-22 2024-11-26 Swift Solar Inc. Integrated bypass diode schemes for solar modules

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502225A (en) 1983-05-06 1985-03-05 Rca Corporation Mechanical scriber for semiconductor devices
DE59309438D1 (de) * 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
US20080105303A1 (en) * 2003-01-03 2008-05-08 Bp Corporation North America Inc. Method and Manufacturing Thin Film Photovoltaic Modules
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
DE102007032283A1 (de) * 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
US20090145472A1 (en) * 2007-12-10 2009-06-11 Terra Solar Global, Inc. Photovoltaic devices having conductive paths formed through the active photo absorber
US20100000589A1 (en) 2008-07-03 2010-01-07 Amelio Solar, Inc. Photovoltaic devices having conductive paths formed through the active photo absorber
JP2010282998A (ja) * 2009-06-02 2010-12-16 Seiko Epson Corp 太陽電池、太陽電池の製造方法
US20110155219A1 (en) * 2009-12-29 2011-06-30 Du Pont Apollo Limited Thin film solar cell and method for fabricating the same
JP2011171605A (ja) * 2010-02-19 2011-09-01 Sumitomo Metal Mining Co Ltd カルコパイライト膜の製造方法
FR2985606B1 (fr) * 2012-01-11 2014-03-14 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.

Also Published As

Publication number Publication date
US9583660B2 (en) 2017-02-28
US20150007866A1 (en) 2015-01-08
CN104160508B (zh) 2017-05-03
FR2985607A1 (fr) 2013-07-12
CN104160508A (zh) 2014-11-19
EP2803088A1 (fr) 2014-11-19
WO2013105024A1 (fr) 2013-07-18

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