FR2996558B1 - Composition et procede de polissage mecano-chimique - Google Patents

Composition et procede de polissage mecano-chimique

Info

Publication number
FR2996558B1
FR2996558B1 FR1359750A FR1359750A FR2996558B1 FR 2996558 B1 FR2996558 B1 FR 2996558B1 FR 1359750 A FR1359750 A FR 1359750A FR 1359750 A FR1359750 A FR 1359750A FR 2996558 B1 FR2996558 B1 FR 2996558B1
Authority
FR
France
Prior art keywords
composition
chemical polishing
mechanical chemical
mechanical
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1359750A
Other languages
English (en)
Other versions
FR2996558A1 (fr
Inventor
Hongyu Wang
David Mosley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2996558A1 publication Critical patent/FR2996558A1/fr
Application granted granted Critical
Publication of FR2996558B1 publication Critical patent/FR2996558B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR1359750A 2012-10-09 2013-10-08 Composition et procede de polissage mecano-chimique Expired - Fee Related FR2996558B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/647,941 US8545715B1 (en) 2012-10-09 2012-10-09 Chemical mechanical polishing composition and method

Publications (2)

Publication Number Publication Date
FR2996558A1 FR2996558A1 (fr) 2014-04-11
FR2996558B1 true FR2996558B1 (fr) 2017-06-23

Family

ID=49229807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359750A Expired - Fee Related FR2996558B1 (fr) 2012-10-09 2013-10-08 Composition et procede de polissage mecano-chimique

Country Status (7)

Country Link
US (1) US8545715B1 (fr)
JP (1) JP6239923B2 (fr)
KR (1) KR102125229B1 (fr)
CN (1) CN103773248B (fr)
DE (1) DE102013016780B4 (fr)
FR (1) FR2996558B1 (fr)
TW (1) TWI609074B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9969042B2 (en) 2013-05-16 2018-05-15 Kreg Enterprises, Inc. Ratcheting quick-adjust drilling jig
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
CN106916536B (zh) * 2015-12-25 2021-04-20 安集微电子(上海)有限公司 一种碱性化学机械抛光液
CN106328544A (zh) * 2016-08-24 2017-01-11 浙江德汇电子陶瓷有限公司 氮化物陶瓷覆铜板的图形化方法及氮化物陶瓷覆铜板
US20180244955A1 (en) * 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
KR102952447B1 (ko) * 2019-09-24 2026-04-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
US12446578B2 (en) 2020-02-10 2025-10-21 Virox Technologies Inc. Antimicrobial compositions containing peroxyphthalic acid and/or salt thereof
CN114945648B (zh) 2020-02-13 2025-06-20 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
KR20230017777A (ko) * 2020-05-28 2023-02-06 가부시끼가이샤 도꾸야마 다관능 활성 수소기 함유 술폰산 4급 암모늄염
CN113186043B (zh) * 2021-04-27 2023-05-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物及其应用
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
TW202428806A (zh) 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法
CN118791973B (zh) * 2024-06-19 2025-09-02 中国矿业大学(北京) 一种用于钴互连阻挡层钛的化学机械抛光液及化学机械抛光方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US20040082274A1 (en) 2002-10-24 2004-04-29 Yaojian Leng Polishing slurry used for copper chemical mechanical polishing (CMP) process
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7300602B2 (en) 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US20060135045A1 (en) 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US20080149884A1 (en) 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
CN102105267B (zh) * 2008-06-18 2016-08-03 福吉米株式会社 抛光组合物及利用该抛光组合物的抛光方法
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
US8513126B2 (en) 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Also Published As

Publication number Publication date
CN103773248B (zh) 2015-08-12
DE102013016780A1 (de) 2014-04-10
KR102125229B1 (ko) 2020-06-22
DE102013016780B4 (de) 2023-03-30
JP2014095072A (ja) 2014-05-22
TW201435069A (zh) 2014-09-16
CN103773248A (zh) 2014-05-07
FR2996558A1 (fr) 2014-04-11
KR20140045891A (ko) 2014-04-17
TWI609074B (zh) 2017-12-21
US8545715B1 (en) 2013-10-01
JP6239923B2 (ja) 2017-11-29

Similar Documents

Publication Publication Date Title
EP2859059A4 (fr) Composition et procédé de polissage du molybdène
BR112014004428A2 (pt) método de fabricação de estrutura e aparelho de fabricação
CU24158B1 (es) Método de obtención de 1-kestosa
ZA201605964B (en) Specimen collection apparatus
BR112015007125A2 (pt) aparelho e método
BR112015013188A2 (pt) método de fermentação otimizado
BR112013028879A2 (pt) aparelho de filtragem
BR112014009795A2 (pt) método
BR112014007958A2 (pt) método
BR112014001765A2 (pt) método
BR112014001237A2 (pt) método
BR112013022820A2 (pt) método de tratamento
EP2833140A4 (fr) Procédé de détection d'une matière biologique
GB201222693D0 (en) Novel method
BR112014025875A2 (pt) Método de medição
FR2998290B1 (fr) Procede de potabilisation
GB201215571D0 (en) Assay method
DK2925790T3 (da) Formalingsproces
FR2995231B1 (fr) Procede de trefilage
EP2820962A4 (fr) Procédé de stérilisation
FI20125179L (fi) Menetelmä kelluttamiseksi
TWI560766B (en) Substrate processing method
FR2993876B1 (fr) Procede de potabilisation
FR2978138B1 (fr) Procede de potabilisation
KR102076512B9 (ko) 기판 처리 방법

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLSC Publication of the preliminary search report

Effective date: 20161223

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

ST Notification of lapse

Effective date: 20240605