FR3011981B1 - Transistor hemt a base d'heterojonction - Google Patents

Transistor hemt a base d'heterojonction Download PDF

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Publication number
FR3011981B1
FR3011981B1 FR1359925A FR1359925A FR3011981B1 FR 3011981 B1 FR3011981 B1 FR 3011981B1 FR 1359925 A FR1359925 A FR 1359925A FR 1359925 A FR1359925 A FR 1359925A FR 3011981 B1 FR3011981 B1 FR 3011981B1
Authority
FR
France
Prior art keywords
heterojunction
based hemt
hemt transistor
transistor
hemt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1359925A
Other languages
English (en)
Other versions
FR3011981A1 (fr
Inventor
Frederic Morancho
Saleem Hamady
Bilal Beydoun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Libanaise
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Libanaise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1359925A priority Critical patent/FR3011981B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Libanaise filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US15/028,671 priority patent/US9831331B2/en
Priority to EP14824049.2A priority patent/EP3055886A1/fr
Priority to CN201480067101.9A priority patent/CN105849911A/zh
Priority to PCT/FR2014/052587 priority patent/WO2015052456A1/fr
Priority to KR1020167012247A priority patent/KR20160100918A/ko
Priority to JP2016547242A priority patent/JP2016537828A/ja
Publication of FR3011981A1 publication Critical patent/FR3011981A1/fr
Application granted granted Critical
Publication of FR3011981B1 publication Critical patent/FR3011981B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
FR1359925A 2013-10-11 2013-10-11 Transistor hemt a base d'heterojonction Expired - Fee Related FR3011981B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1359925A FR3011981B1 (fr) 2013-10-11 2013-10-11 Transistor hemt a base d'heterojonction
EP14824049.2A EP3055886A1 (fr) 2013-10-11 2014-10-10 Transistor hemt à base d'heterojonction
CN201480067101.9A CN105849911A (zh) 2013-10-11 2014-10-10 基于异质结的hemt晶体管
PCT/FR2014/052587 WO2015052456A1 (fr) 2013-10-11 2014-10-10 Transistor hemt à base d'heterojonction
US15/028,671 US9831331B2 (en) 2013-10-11 2014-10-10 Heterojunction-based HEMT transistor
KR1020167012247A KR20160100918A (ko) 2013-10-11 2014-10-10 헤테로 접합으로부터 제조된 hemt
JP2016547242A JP2016537828A (ja) 2013-10-11 2014-10-10 ヘテロ接合に基づくｈｅｍｔトランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1359925 2013-10-11
FR1359925A FR3011981B1 (fr) 2013-10-11 2013-10-11 Transistor hemt a base d'heterojonction

Publications (2)

Publication Number Publication Date
FR3011981A1 FR3011981A1 (fr) 2015-04-17
FR3011981B1 true FR3011981B1 (fr) 2018-03-02

Family

ID=50069059

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359925A Expired - Fee Related FR3011981B1 (fr) 2013-10-11 2013-10-11 Transistor hemt a base d'heterojonction

Country Status (7)

Country Link
US (1) US9831331B2 (fr)
EP (1) EP3055886A1 (fr)
JP (1) JP2016537828A (fr)
KR (1) KR20160100918A (fr)
CN (1) CN105849911A (fr)
FR (1) FR3011981B1 (fr)
WO (1) WO2015052456A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3030114B1 (fr) 2014-12-15 2018-01-26 Centre National De La Recherche Scientifique - Cnrs - Transistor hemt
ITUB20155862A1 (it) 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
DE102017215296A1 (de) * 2017-09-01 2019-03-07 Robert Bosch Gmbh Feldeffekttransistor und Verfahren zur Herstellung eines Feldeffekttransistors
US11087055B2 (en) * 2017-11-17 2021-08-10 Samsung Electronics Co., Ltd. Method of screening materials using forward conducting modes
TWI791888B (zh) * 2018-09-11 2023-02-11 美商美國亞德諾半導體公司 增強模式化合物半導體場效電晶體、半導體裝置、以及製造增強模式半導體裝置之方法
CN113950748A (zh) * 2019-01-28 2022-01-18 沃孚半导体公司 具有隐埋p型层的iii族氮化物高电子迁移率晶体管及其制造方法
JP7581187B2 (ja) 2019-04-25 2024-11-12 ローム株式会社 窒化物半導体装置
JP7395273B2 (ja) * 2019-07-02 2023-12-11 ローム株式会社 窒化物半導体装置およびその製造方法
WO2021217651A1 (fr) 2020-04-30 2021-11-04 Innoscience (suzhou) Semiconductor Co., Ltd. Dispositif à semi-conducteurs et son procédé de fabrication
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US12557322B2 (en) 2021-05-17 2026-02-17 Wolfspeed, Inc. Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof
CN117501451A (zh) * 2021-06-17 2024-02-02 华为技术有限公司 Hemt器件及其制作方法、电子设备
US12289902B2 (en) 2021-11-09 2025-04-29 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324813A (ja) * 2001-02-21 2002-11-08 Nippon Telegr & Teleph Corp <Ntt> ヘテロ構造電界効果トランジスタ
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7932539B2 (en) 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
JP2008112868A (ja) * 2006-10-30 2008-05-15 Eudyna Devices Inc 半導体装置およびその製造方法
US7687799B2 (en) * 2008-06-19 2010-03-30 Intel Corporation Methods of forming buffer layer architecture on silicon and structures formed thereby
JP5271022B2 (ja) * 2008-10-01 2013-08-21 株式会社豊田中央研究所 半導体装置
EP2346071B1 (fr) * 2008-10-29 2017-04-05 Fujitsu Limited Dispositif a semi-conducteurs composés et son procédé de fabrication
US9105703B2 (en) * 2010-03-22 2015-08-11 International Rectifier Corporation Programmable III-nitride transistor with aluminum-doped gate
FR2974242B1 (fr) * 2011-04-14 2013-09-27 Thales Sa Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n
JP2012248632A (ja) * 2011-05-26 2012-12-13 Advanced Power Device Research Association 窒化物半導体装置および窒化物半導体装置の製造方法
JP5895651B2 (ja) * 2012-03-28 2016-03-30 富士通株式会社 化合物半導体装置及びその製造方法
JP6054621B2 (ja) * 2012-03-30 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
FR2998709B1 (fr) 2012-11-26 2015-01-16 Commissariat Energie Atomique Procede de fabrication d'un transistor a heterojonction de type normalement bloque

Also Published As

Publication number Publication date
JP2016537828A (ja) 2016-12-01
US9831331B2 (en) 2017-11-28
FR3011981A1 (fr) 2015-04-17
US20160254377A1 (en) 2016-09-01
CN105849911A (zh) 2016-08-10
EP3055886A1 (fr) 2016-08-17
WO2015052456A1 (fr) 2015-04-16
KR20160100918A (ko) 2016-08-24

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