FR3030940B1 - Chaine d'amplification du type dispositif de plot de gain amelioree - Google Patents

Chaine d'amplification du type dispositif de plot de gain amelioree Download PDF

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Publication number
FR3030940B1
FR3030940B1 FR1402916A FR1402916A FR3030940B1 FR 3030940 B1 FR3030940 B1 FR 3030940B1 FR 1402916 A FR1402916 A FR 1402916A FR 1402916 A FR1402916 A FR 1402916A FR 3030940 B1 FR3030940 B1 FR 3030940B1
Authority
FR
France
Prior art keywords
device type
plate device
amplification chain
improved gain
gain plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1402916A
Other languages
English (en)
Other versions
FR3030940A1 (fr
Inventor
Victor Dupuy
Benoit Mallet Guy
Laurent Roussel
Claude Jean Auric
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR1402916A priority Critical patent/FR3030940B1/fr
Priority to PCT/EP2015/080695 priority patent/WO2016097397A1/fr
Priority to EP15820507.0A priority patent/EP3235125A1/fr
Publication of FR3030940A1 publication Critical patent/FR3030940A1/fr
Application granted granted Critical
Publication of FR3030940B1 publication Critical patent/FR3030940B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/39—Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/42—Indexing scheme relating to amplifiers the input to the amplifier being made by capacitive coupling means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
FR1402916A 2014-12-18 2014-12-18 Chaine d'amplification du type dispositif de plot de gain amelioree Active FR3030940B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1402916A FR3030940B1 (fr) 2014-12-18 2014-12-18 Chaine d'amplification du type dispositif de plot de gain amelioree
PCT/EP2015/080695 WO2016097397A1 (fr) 2014-12-18 2015-12-18 Chaîne d'amplification du type dispositif de plot de gain améliorée
EP15820507.0A EP3235125A1 (fr) 2014-12-18 2015-12-18 Chaîne d'amplification du type dispositif de plot de gain améliorée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1402916A FR3030940B1 (fr) 2014-12-18 2014-12-18 Chaine d'amplification du type dispositif de plot de gain amelioree
FR1402916 2014-12-18

Publications (2)

Publication Number Publication Date
FR3030940A1 FR3030940A1 (fr) 2016-06-24
FR3030940B1 true FR3030940B1 (fr) 2018-03-09

Family

ID=53177519

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1402916A Active FR3030940B1 (fr) 2014-12-18 2014-12-18 Chaine d'amplification du type dispositif de plot de gain amelioree

Country Status (3)

Country Link
EP (1) EP3235125A1 (fr)
FR (1) FR3030940B1 (fr)
WO (1) WO2016097397A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110693482B (zh) * 2019-08-23 2020-12-22 西安电子科技大学 一种应用于心电信号采集的模拟前端电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4206589B2 (ja) * 1999-12-02 2009-01-14 富士通株式会社 分布増幅器
CN102047554A (zh) * 2008-05-27 2011-05-04 雷斯潘公司 具有线性化的射频功率放大器
US8035449B1 (en) * 2009-01-02 2011-10-11 Rf Micro Devices, Inc. Capacitively-coupled distributed amplifier with baseband performance
FR2948514B1 (fr) * 2009-07-24 2011-07-22 Thales Sa Structure hyperfrequences de commutation a amplificateur distribue avec entree d'injection de signal de test
FR2953665B1 (fr) * 2009-12-08 2013-08-02 Thales Sa Amplificateur distribue hyperfrequences large bande et grande dynamique et structures hyperfrequences utilisant un tel amplificateur

Also Published As

Publication number Publication date
EP3235125A1 (fr) 2017-10-25
WO2016097397A1 (fr) 2016-06-23
FR3030940A1 (fr) 2016-06-24

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