FR3047111B1 - Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication - Google Patents
Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication Download PDFInfo
- Publication number
- FR3047111B1 FR3047111B1 FR1650583A FR1650583A FR3047111B1 FR 3047111 B1 FR3047111 B1 FR 3047111B1 FR 1650583 A FR1650583 A FR 1650583A FR 1650583 A FR1650583 A FR 1650583A FR 3047111 B1 FR3047111 B1 FR 3047111B1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- assembly
- metal sintered
- interconnection elements
- interconnect means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01215—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps forming coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01261—Chemical or physical modification, e.g. by sintering or anodisation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
- H10W72/07253—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
- H10W72/07255—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/224—Bumps having multiple side-by-side cores
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/225—Bumps having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/234—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1650583A FR3047111B1 (fr) | 2016-01-26 | 2016-01-26 | Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication |
| PCT/EP2017/051667 WO2017129687A1 (fr) | 2016-01-26 | 2017-01-26 | Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication |
| EP17701352.1A EP3408863A1 (fr) | 2016-01-26 | 2017-01-26 | Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication |
| US16/072,867 US11011490B2 (en) | 2016-01-26 | 2017-01-26 | Assembly comprising hybrid interconnecting means including intermediate interconnecting elements and sintered metal joints, and manufacturing process |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1650583A FR3047111B1 (fr) | 2016-01-26 | 2016-01-26 | Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication |
| FR1650583 | 2016-01-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3047111A1 FR3047111A1 (fr) | 2017-07-28 |
| FR3047111B1 true FR3047111B1 (fr) | 2018-03-23 |
Family
ID=55486949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1650583A Active FR3047111B1 (fr) | 2016-01-26 | 2016-01-26 | Assemblage comprenant des moyens d'interconnexion mixtes comportant des elements intermediaires d'interconnexion et des joints frittes metalliques et procede de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11011490B2 (fr) |
| EP (1) | EP3408863A1 (fr) |
| FR (1) | FR3047111B1 (fr) |
| WO (1) | WO2017129687A1 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170309549A1 (en) * | 2016-04-21 | 2017-10-26 | Texas Instruments Incorporated | Sintered Metal Flip Chip Joints |
| US10759658B2 (en) * | 2018-12-10 | 2020-09-01 | Texas Instruments Incorporated | Hermetic vertical shear weld wafer bonding |
| US10910336B2 (en) * | 2019-01-29 | 2021-02-02 | Shih-Chi Chen | Chip package structure |
| US11329018B2 (en) | 2019-10-23 | 2022-05-10 | International Business Machines Corporation | Forming of bump structure |
| EP3872855A1 (fr) * | 2020-02-27 | 2021-09-01 | Siemens Aktiengesellschaft | Substrat semi-fini pour un module électronique de puissance avec une structure de câblage avec des protubérances et procédé de fabrication correspondant |
| US11348875B2 (en) * | 2020-02-27 | 2022-05-31 | Micron Technology, Inc. | Semiconductor devices with flexible connector array |
| KR102273299B1 (ko) | 2020-04-27 | 2021-07-06 | 알에프에이치아이씨 주식회사 | 열 확산 및 임피던스 정합을 위한 GaN 기반 고출력 트랜지스터 구조체 및 이를 제조하는 방법 |
| US20230215830A1 (en) * | 2020-06-15 | 2023-07-06 | Sony Semiconductor Solutions Corporation | Semiconductor device and method of manufacturing the same |
| WO2021259536A2 (fr) | 2020-06-23 | 2021-12-30 | Siemens Aktiengesellschaft | Procédé de mise en contact d'un semi-conducteur de puissance sur un substrat |
| US12199059B2 (en) * | 2021-02-18 | 2025-01-14 | International Business Machines Corporation | Sintering a nanoparticle paste for semiconductor chip join |
| FR3121277B1 (fr) | 2021-03-26 | 2024-02-16 | Safran Electronics & Defense | Procédé pour assembler un composant électronique à un substrat |
| FR3121278A1 (fr) | 2021-03-26 | 2022-09-30 | Safran Electronics & Defense | Procédé pour assembler un composant électronique à un substrat par pressage |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1139117C (zh) * | 1995-03-20 | 2004-02-18 | 株式会社东芝 | 氮化硅电路板 |
| US20020093108A1 (en) | 2001-01-15 | 2002-07-18 | Grigorov Ilya L. | Flip chip packaged semiconductor device having double stud bumps and method of forming same |
| US8257795B2 (en) | 2004-02-18 | 2012-09-04 | Virginia Tech Intellectual Properties, Inc. | Nanoscale metal paste for interconnect and method of use |
| US20060030069A1 (en) * | 2004-08-04 | 2006-02-09 | Chien-Wei Chang | Packaging method for manufacturing substrates |
| JP2007184408A (ja) * | 2006-01-06 | 2007-07-19 | Nec Corp | 電極接合方法 |
| JP4731340B2 (ja) * | 2006-02-02 | 2011-07-20 | 富士通株式会社 | 半導体装置の製造方法 |
| JP4343177B2 (ja) | 2006-02-06 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| JP5151584B2 (ja) * | 2008-03-17 | 2013-02-27 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5322774B2 (ja) * | 2009-05-25 | 2013-10-23 | パナソニック株式会社 | 実装構造体、およびその製造方法 |
| US8580607B2 (en) * | 2010-07-27 | 2013-11-12 | Tessera, Inc. | Microelectronic packages with nanoparticle joining |
| US9406579B2 (en) * | 2012-05-14 | 2016-08-02 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of controlling warpage in semiconductor package |
| US8823175B2 (en) | 2012-05-15 | 2014-09-02 | Infineon Technologies Ag | Reliable area joints for power semiconductors |
| KR101565690B1 (ko) | 2014-04-10 | 2015-11-03 | 삼성전기주식회사 | 회로기판, 회로기판 제조방법, 전자부품 패키지 및 전자부품 패키지 제조방법 |
| US9633971B2 (en) * | 2015-07-10 | 2017-04-25 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
-
2016
- 2016-01-26 FR FR1650583A patent/FR3047111B1/fr active Active
-
2017
- 2017-01-26 EP EP17701352.1A patent/EP3408863A1/fr active Pending
- 2017-01-26 WO PCT/EP2017/051667 patent/WO2017129687A1/fr not_active Ceased
- 2017-01-26 US US16/072,867 patent/US11011490B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3047111A1 (fr) | 2017-07-28 |
| US20180374813A1 (en) | 2018-12-27 |
| WO2017129687A1 (fr) | 2017-08-03 |
| US11011490B2 (en) | 2021-05-18 |
| EP3408863A1 (fr) | 2018-12-05 |
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