FR3058997B1 - Procede de dopage de graphene - Google Patents

Procede de dopage de graphene Download PDF

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Publication number
FR3058997B1
FR3058997B1 FR1661352A FR1661352A FR3058997B1 FR 3058997 B1 FR3058997 B1 FR 3058997B1 FR 1661352 A FR1661352 A FR 1661352A FR 1661352 A FR1661352 A FR 1661352A FR 3058997 B1 FR3058997 B1 FR 3058997B1
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FR
France
Prior art keywords
graphene
zone
layer
ini
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1661352A
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English (en)
Other versions
FR3058997A1 (fr
Inventor
Poche Helene Le
Alexandre Carella
Jean Dijon
Hanako Okuno
Emilie Raux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1661352A priority Critical patent/FR3058997B1/fr
Priority to EP17202863.1A priority patent/EP3364461A1/fr
Priority to US15/819,467 priority patent/US20180142346A1/en
Publication of FR3058997A1 publication Critical patent/FR3058997A1/fr
Application granted granted Critical
Publication of FR3058997B1 publication Critical patent/FR3058997B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/02—Single layer graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

La présente invention concerne un procédé utile pour préparer une couche de graphène transparente et de conductivité électrique améliorée et stabilisée, ledit procédé comprenant au moins les étapes consistant à : (i) disposer d'au moins une couche de graphène transparente et possédant une résistance carrée, R□ini, (ii) doper au moins une zone de ladite couche de graphène pour former une zone de graphène dopée ayant une résistance carrée stabilisée, R□Y, de valeur inférieure à R□ini. caractérisé en ce que l' étape (ii) est réalisée par pulvérisation, en surface d'au moins ladite zone de ladite couche de graphène (i), d'au moins un dopant choisi parmi les sels et complexes organométalliques de platine ou de palladium de degré d'oxydation +IV ou +II et en ce que de préférence la zone de graphène dopé possède en outre une valeur de transmittance supérieure à 85% sur l'ensemble du spectre du visible.
FR1661352A 2016-11-22 2016-11-22 Procede de dopage de graphene Active FR3058997B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1661352A FR3058997B1 (fr) 2016-11-22 2016-11-22 Procede de dopage de graphene
EP17202863.1A EP3364461A1 (fr) 2016-11-22 2017-11-21 Procédé de dopage de graphène
US15/819,467 US20180142346A1 (en) 2016-11-22 2017-11-21 Process for doping graphene

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1661352A FR3058997B1 (fr) 2016-11-22 2016-11-22 Procede de dopage de graphene
FR1661352 2016-11-22

Publications (2)

Publication Number Publication Date
FR3058997A1 FR3058997A1 (fr) 2018-05-25
FR3058997B1 true FR3058997B1 (fr) 2022-02-11

Family

ID=57963327

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1661352A Active FR3058997B1 (fr) 2016-11-22 2016-11-22 Procede de dopage de graphene

Country Status (3)

Country Link
US (1) US20180142346A1 (fr)
EP (1) EP3364461A1 (fr)
FR (1) FR3058997B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736176B (zh) * 2019-10-14 2023-01-13 中国科学院金属研究所 一种提高发光二极管发光效率的方法
DE102023002950A1 (de) 2023-07-13 2025-01-16 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Anordnung für Hall-Effekt-Messungen an Proben und Verfahren zur Herstellung einer Anordnung für Hall-Effekt-Messungen an Proben

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110061909A (ko) * 2009-12-02 2011-06-10 삼성전자주식회사 도펀트로 도핑된 그라펜 및 이를 이용한 소자
KR101385048B1 (ko) * 2012-02-29 2014-04-24 중앙대학교 산학협력단 그래핀 도핑을 통한 일함수 증대
KR102014993B1 (ko) * 2012-10-23 2019-08-27 삼성전자주식회사 소수성 유기물을 함유하는 도핑 그래핀 구조체, 그의 제조방법 및 이를 구비하는 투명전극, 표시소자와 태양전지
KR20140143533A (ko) * 2013-06-07 2014-12-17 엘지전자 주식회사 패턴 된 그래핀의 제조 방법 및 그 그래핀

Also Published As

Publication number Publication date
EP3364461A1 (fr) 2018-08-22
FR3058997A1 (fr) 2018-05-25
US20180142346A1 (en) 2018-05-24

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