FR3064110B1 - Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage - Google Patents

Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage Download PDF

Info

Publication number
FR3064110B1
FR3064110B1 FR1758774A FR1758774A FR3064110B1 FR 3064110 B1 FR3064110 B1 FR 3064110B1 FR 1758774 A FR1758774 A FR 1758774A FR 1758774 A FR1758774 A FR 1758774A FR 3064110 B1 FR3064110 B1 FR 3064110B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
optoelectronic devices
micro
training
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1758774A
Other languages
English (en)
Other versions
FR3064110A1 (fr
Inventor
David Sotta
Olivier Ledoux
Olivier Bonnin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1758774A priority Critical patent/FR3064110B1/fr
Publication of FR3064110A1 publication Critical patent/FR3064110A1/fr
Application granted granted Critical
Publication of FR3064110B1 publication Critical patent/FR3064110B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials

Landscapes

  • Led Devices (AREA)

Abstract

L'invention porte sur un substrat de croissance (1) pour la formation de dispositifs optoélectroniques comprenant un support de croissance (2) et, disposée sur le support de croissance (2), un premier groupe d'îlots semi-conducteurs cristallins (3a) présentant un premier paramètre de maille et un deuxième groupe d'îlots semi-conducteur cristallin (3b) présentant un deuxième paramètre de maille, différent du premier. L'invention porte également sur un procédé de fabrication du substrat de croissance, sur un procédé de fabrication collective d'une pluralité de dispositifs optoélectroniques sur le substrat de croissance. Elle s'applique pour fournir un micro-panneau monolithique de diodes électroluminescentes ou un micro-écran d'affichage.
FR1758774A 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage Active FR3064110B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1758774A FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1752230 2017-03-17
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1758774A FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Publications (2)

Publication Number Publication Date
FR3064110A1 FR3064110A1 (fr) 2018-09-21
FR3064110B1 true FR3064110B1 (fr) 2021-04-30

Family

ID=61027774

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1752230A Active FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1758774A Active FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1752230A Active FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage

Country Status (2)

Country Link
US (1) US10084011B1 (fr)
FR (2) FR3064108B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378365B (zh) * 2017-08-08 2021-09-14 英属开曼群岛商錼创科技股份有限公司 微型发光二极管装置及其制作方法
FR3088478B1 (fr) 2018-11-08 2020-10-30 Soitec Silicon On Insulator Procede de fabrication collective d'une pluralite de structures semi-conductrices
KR102867340B1 (ko) 2020-10-30 2025-09-30 삼성전자주식회사 질화물 반도체 발광소자 및 이를 이용한 디스플레이 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425383T2 (de) 1994-10-11 2001-02-15 International Business Machines Corp., Armonk Monoelektrische anordnung von lichtemittierenden dioden zur lichterzeugung mehrerer wellenlängen und deren anwendung für mehrfarben-anzeigevorrichtungen
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
EP2151856A1 (fr) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relâchement de couches tendues
EP2151852B1 (fr) * 2008-08-06 2020-01-15 Soitec Relâchement et transfert de couches tendues
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante

Also Published As

Publication number Publication date
FR3064108A1 (fr) 2018-09-21
US10084011B1 (en) 2018-09-25
US20180269253A1 (en) 2018-09-20
FR3064108B1 (fr) 2022-12-30
FR3064110A1 (fr) 2018-09-21

Similar Documents

Publication Publication Date Title
FR3064110B1 (fr) Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage
GB201220562D0 (en) Integrating active matrix inorganic light emitting diodes for display devices
TW200610192A (en) Group III nitride semiconductor crystal and manufacturing method of the same, group III nitride semiconductor device and manufacturing method of the same, and light emitting device
US10014436B2 (en) Method for manufacturing a light emitting element
EP4020572A4 (fr) Dispositif d'affichage. procédé de fabrication s'y rapportant et substrat d'excitation
EP3862134A4 (fr) Substrat de phosphure d'indium, tranche épitaxiale de semi-conducteur, et procédé de production de substrat de phosphure d'indium
DE602004030161D1 (de) Verringerung von karottendefekten bei der siliciumcarbid-epitaxie
EP3993051A4 (fr) Procédé de fabrication de dispositif d'affichage et substrat pour fabrication pour dispositifs d'affichage
EP4148800A4 (fr) Substrat d'affichage, panneau d'affichage, dispositif d'affichage et procédé de fabrication de substrat d'affichage
EP3984066A4 (fr) Procédé de fabrication de dispositif d'affichage et substrat pour fabrication de dispositif d'affichage
PH12019000493B1 (en) Display device
MY205321A (en) Display device, substrate for display device and method for repairing display device
WO2013154485A9 (fr) Fabrication d'un dispositif à semi-conducteur
SG10201808377WA (en) Wafer Support System, Wafer Support Device, System Comprising A Wafer And A Wafer Support Device As Well As Mask Aligner
RU2013144315A (ru) Полупроводниковые устройства и способы изготовления
EP4012770A4 (fr) Procédé de fabrication de dispositif d'affichage et substrat pour fabrication de dispositif d'affichage
EP4123707A4 (fr) Substrat d'affichage et son procédé de fabrication, et dispositif d'affichage
FR3062398B1 (fr) Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale
EP3862133A4 (fr) Substrat de phosphure d'indium, tranche épitaxiale de semi-conducteur et procédé de fabrication de substrat de phosphure d'indium
EP3862132A4 (fr) Substrat de phosphure d'indium, tranche épitaxiale de semi-conducteur et procédé de fabrication de substrat de phosphure d'indium
US10411159B2 (en) Patterned substrate and light emitting diode wafer
EP1538243A4 (fr) Substrat monocristal de diborure, composant a semi-conducteur le mettant en application et son procede de fabrication
FR3061357B1 (fr) Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance
SG11201908017RA (en) Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens
EP4036282A4 (fr) Substrat sic, procédé de production de substrat sic, dispositif à semi-conducteurs sic et procédé de production de dispositif à semi-conducteurs sic

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20180921

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10