FR3065320B1 - Pixel de detection de temps de vol - Google Patents

Pixel de detection de temps de vol Download PDF

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Publication number
FR3065320B1
FR3065320B1 FR1753344A FR1753344A FR3065320B1 FR 3065320 B1 FR3065320 B1 FR 3065320B1 FR 1753344 A FR1753344 A FR 1753344A FR 1753344 A FR1753344 A FR 1753344A FR 3065320 B1 FR3065320 B1 FR 3065320B1
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FR
France
Prior art keywords
time detection
detection pixel
flight time
storage area
area
Prior art date
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Active
Application number
FR1753344A
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English (en)
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FR3065320A1 (fr
Inventor
Francois Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1753344A priority Critical patent/FR3065320B1/fr
Priority to US15/953,925 priority patent/US10951844B2/en
Publication of FR3065320A1 publication Critical patent/FR3065320A1/fr
Application granted granted Critical
Publication of FR3065320B1 publication Critical patent/FR3065320B1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

L'invention concerne un capteur de détection de temps de vol comprenant une pluralité de pixels, chaque pixel comprenant une zone photosensible (PD) et au moins deux ensembles (Qi) comprenant chacun : une zone de stockage de charges (memi) ; un transistor de transfert (Tmem-j) adapté à contrôler des transferts de charges de la zone photosensible (PD) vers la zone de stockage de charges ; et un moyen de lecture (Vri, 23, 25, LECT) apte à mesurer de manière non-destructive la quantité de charges stockée dans la zone de stockage.
FR1753344A 2017-04-18 2017-04-18 Pixel de detection de temps de vol Active FR3065320B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1753344A FR3065320B1 (fr) 2017-04-18 2017-04-18 Pixel de detection de temps de vol
US15/953,925 US10951844B2 (en) 2017-04-18 2018-04-16 Time-of-flight detection pixel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1753344 2017-04-18
FR1753344A FR3065320B1 (fr) 2017-04-18 2017-04-18 Pixel de detection de temps de vol

Publications (2)

Publication Number Publication Date
FR3065320A1 FR3065320A1 (fr) 2018-10-19
FR3065320B1 true FR3065320B1 (fr) 2020-02-07

Family

ID=60302158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1753344A Active FR3065320B1 (fr) 2017-04-18 2017-04-18 Pixel de detection de temps de vol

Country Status (2)

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US (1) US10951844B2 (fr)
FR (1) FR3065320B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4095913B1 (fr) 2017-12-13 2024-09-25 Magic Leap, Inc. Circuit de pixels à obturateur global
JP2020148706A (ja) * 2019-03-15 2020-09-17 オムロン株式会社 投光装置およびこれを備えたｔｏｆセンサ、距離画像生成装置
US11923465B2 (en) * 2019-12-19 2024-03-05 Stmicroelectronics (Crolles 2) Sas Photodiode comprising a memory area
GB2590645A (en) * 2019-12-20 2021-07-07 Teledyne Uk Ltd Imaging device
FR3109841B1 (fr) 2020-04-30 2022-07-15 St Microelectronics Crolles 2 Sas Pixel comprenant une zone de stockage de charges
JP2021197388A (ja) * 2020-06-10 2021-12-27 ソニーセミコンダクタソリューションズ株式会社 受光装置およびその製造方法、並びに、測距装置
JP7662983B2 (ja) * 2020-10-28 2025-04-16 Ｔｏｐｐａｎホールディングス株式会社 距離画像撮像素子及び距離画像撮像装置
EP4020006B1 (fr) * 2020-12-23 2025-07-02 STMicroelectronics (Research & Development) Limited Capteur de temps de vol indirect
WO2022246465A1 (fr) * 2021-05-21 2022-11-24 Connectsix Llc Capteur atmosphérique faisant appel à une ouverture de détection à déclenchement temporel programmable
KR102923284B1 (ko) * 2023-09-13 2026-02-09 주식회사 듀오픽스레이 엑스레이 검출 패널, 그것을 갖는 엑스레이 디텍터, 및 엑스레이 검출 패널용 단위 픽셀
FR3165998A1 (fr) 2024-09-05 2026-03-06 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Capteur d’une image en profondeur comprenant un moyen de remise à zéro de la région photosensible

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1622200A1 (fr) * 2004-07-26 2006-02-01 CSEM Centre Suisse d'Electronique et de Microtechnique SA Pixel photodetecteur à l'état solide et méthode de photo-détection
US8928792B1 (en) * 2011-01-31 2015-01-06 Aptina Imaging Corporation CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing
JP6374690B2 (ja) * 2014-04-01 2018-08-15 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
FR3027732B1 (fr) * 2014-10-27 2016-12-23 Commissariat Energie Atomique Capteur d'image a electrodes verticales
DE102015112398A1 (de) * 2015-07-29 2017-02-02 Infineon Technologies Ag Bilderzeugungsvorrichtung und Bilderzeugungsverfahren zum Erfassen von Bilderzeugungsdaten über ein Pixelarray
FR3046495B1 (fr) * 2015-12-30 2018-02-16 Stmicroelectronics (Crolles 2) Sas Pixel de detection de temps de vol
EP4095913B1 (fr) * 2017-12-13 2024-09-25 Magic Leap, Inc. Circuit de pixels à obturateur global

Also Published As

Publication number Publication date
FR3065320A1 (fr) 2018-10-19
US20180302582A1 (en) 2018-10-18
US10951844B2 (en) 2021-03-16

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