FR3079071B1 - Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille - Google Patents

Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille Download PDF

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FR3079071B1
FR3079071B1 FR1852156A FR1852156A FR3079071B1 FR 3079071 B1 FR3079071 B1 FR 3079071B1 FR 1852156 A FR1852156 A FR 1852156A FR 1852156 A FR1852156 A FR 1852156A FR 3079071 B1 FR3079071 B1 FR 3079071B1
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Prior art keywords
islands
group
relaxation
blocks
crystalline semiconductor
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FR1852156A
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FR3079071A1 (fr
Inventor
Jean-Marc BETHOUX
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Soitec SA
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Soitec SA
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Priority to FR1852156A priority Critical patent/FR3079071B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP18714309.4A priority patent/EP3596756B1/fr
Priority to SG11201908017R priority patent/SG11201908017RA/en
Priority to PCT/FR2018/050606 priority patent/WO2018167426A2/fr
Priority to KR1020197030303A priority patent/KR102456048B1/ko
Priority to EP22161925.7A priority patent/EP4033531B1/fr
Priority to CN201880018523.5A priority patent/CN110447100B/zh
Priority to JP2019541084A priority patent/JP7053055B2/ja
Priority to US16/069,469 priority patent/US20210210653A1/en
Priority to TW107108791A priority patent/TWI740015B/zh
Priority to US16/352,085 priority patent/US11081521B2/en
Publication of FR3079071A1 publication Critical patent/FR3079071A1/fr
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Publication of FR3079071B1 publication Critical patent/FR3079071B1/fr
Priority to JP2022048947A priority patent/JP7322329B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'une pluralité d'îlots semi-conducteurs cristallins (3a, 3b) présentant une variété de paramètres de maille. Le procédé comprend les étapes suivantes : - fournir un substrat de relaxation comportant un support, une couche de fluage disposée sur le support et composée d'un premier groupe de pavés présentant une première viscosité à une température de relaxation et d'un deuxième groupe de pavés présentant une deuxième viscosité, différente de la première, à la température de relaxation. Le substrat de relaxation comprend également sur la couche de fluage, une pluralité d'îlots semi-conducteurs cristallins contraints, les îlots d'un premier groupe d'îlots étant disposé sur les pavés du premier groupe de pavés et les îlots d'un deuxième groupe d'ilots étant disposé sur les pavés du deuxième groupe de pavés ; - traiter thermiquement le substrat de relaxation à la température de relaxation, supérieure ou égale à la température de transition vitreuse d'au moins un des pavés de la couche de fluage, pour provoquer l'expansion latérale différenciée des îlots du premier et du second groupe, le paramètre de maille des îlots relaxés du premier groupe (3a) et des îlots relaxés du second groupe (3b) présentant alors des valeurs différentes.
FR1852156A 2017-03-17 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille Active FR3079071B1 (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
FR1852156A FR3079071B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille
US16/069,469 US20210210653A1 (en) 2017-03-17 2018-03-14 Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens
PCT/FR2018/050606 WO2018167426A2 (fr) 2017-03-17 2018-03-14 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage
KR1020197030303A KR102456048B1 (ko) 2017-03-17 2018-03-14 광전자 디바이스들을 형성하기 위한 성장 기판, 이러한 기판의 제조 방법 및 특히 마이크로-디스플레이 스크린 분야에서의 기판의 사용 방법
EP22161925.7A EP4033531B1 (fr) 2017-03-17 2018-03-14 Procédé de fabrication d'une pluralité d'îlots semiconducteurs cristallins
CN201880018523.5A CN110447100B (zh) 2017-03-17 2018-03-14 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用
EP18714309.4A EP3596756B1 (fr) 2017-03-17 2018-03-14 Procédé de fabrication d'une pluralité d'îlots semi-conducteurs cristallins présentant une variété de paramètres de maille
SG11201908017R SG11201908017RA (en) 2017-03-17 2018-03-14 Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens
JP2019541084A JP7053055B2 (ja) 2017-03-17 2018-03-14 光電子デバイスを形成するための成長基板、そのような基板を作製するための方法、及び特にマイクロディスプレイスクリーンの分野における基板の使用
TW107108791A TWI740015B (zh) 2017-03-17 2018-03-15 用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用
US16/352,085 US11081521B2 (en) 2018-03-13 2019-03-13 Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters
JP2022048947A JP7322329B2 (ja) 2017-03-17 2022-03-24 光電子デバイスを形成するための成長基板、そのような基板を作製するための方法、及び特にマイクロディスプレイスクリーンの分野における基板の使用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852156A FR3079071B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille
FR1852156 2018-03-13

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FR3079071A1 FR3079071A1 (fr) 2019-09-20
FR3079071B1 true FR3079071B1 (fr) 2020-02-28

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FR (1) FR3079071B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020119227A1 (de) 2020-07-21 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterkörpers und strahlungsemittierender Halbleiterkörper

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425383T2 (de) 1994-10-11 2001-02-15 International Business Machines Corp., Armonk Monoelektrische anordnung von lichtemittierenden dioden zur lichterzeugung mehrerer wellenlängen und deren anwendung für mehrfarben-anzeigevorrichtungen
US20020136932A1 (en) 2001-03-21 2002-09-26 Seikoh Yoshida GaN-based light emitting device
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
CN101540357B (zh) 2008-03-19 2010-09-01 中国科学院半导体研究所 控制自组织铟镓砷量子点成核的生长方法
EP2151856A1 (fr) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relâchement de couches tendues
EP2151852B1 (fr) * 2008-08-06 2020-01-15 Soitec Relâchement et transfert de couches tendues
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101081169B1 (ko) 2010-04-05 2011-11-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante

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US20190288030A1 (en) 2019-09-19
US11081521B2 (en) 2021-08-03
FR3079071A1 (fr) 2019-09-20

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