FR3080948B1 - Circuit integre comprenant un element capacitif, et procede de fabrication - Google Patents

Circuit integre comprenant un element capacitif, et procede de fabrication Download PDF

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Publication number
FR3080948B1
FR3080948B1 FR1853778A FR1853778A FR3080948B1 FR 3080948 B1 FR3080948 B1 FR 3080948B1 FR 1853778 A FR1853778 A FR 1853778A FR 1853778 A FR1853778 A FR 1853778A FR 3080948 B1 FR3080948 B1 FR 3080948B1
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FR
France
Prior art keywords
integrated circuit
capacitive element
conductivity type
manufacturing
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1853778A
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English (en)
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FR3080948A1 (fr
Inventor
Abderrezak Marzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
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STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1853778A priority Critical patent/FR3080948B1/fr
Priority to CN201910361989.1A priority patent/CN110444545B/zh
Priority to CN201920616986.3U priority patent/CN210272346U/zh
Priority to CN202411212126.5A priority patent/CN119095379A/zh
Priority to US16/400,286 priority patent/US10943973B2/en
Publication of FR3080948A1 publication Critical patent/FR3080948A1/fr
Priority to US17/165,013 priority patent/US11605702B2/en
Application granted granted Critical
Publication of FR3080948B1 publication Critical patent/FR3080948B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

Le circuit intégré comprend au moins un élément capacitif (C) comprenant une première électrode munie d'une première plaque (Pl) électriquement conductrice située sur un caisson semiconducteur d'un premier type de conductivité (PW), une deuxième électrode munie d'une deuxième plaque (P2) électriquement conductrice sur la première plaque, du caisson (PW), et d'une région superficielle (NS) fortement dopée d'un deuxième type de conductivité opposé au premier type de conductivité située sous la première plaque et en surface du caisson, et une région diélectrique (OxT, OxG) interélectrodes séparant électriquement la première électrode et la deuxième électrode.
FR1853778A 2018-05-02 2018-05-02 Circuit integre comprenant un element capacitif, et procede de fabrication Active FR3080948B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1853778A FR3080948B1 (fr) 2018-05-02 2018-05-02 Circuit integre comprenant un element capacitif, et procede de fabrication
CN201910361989.1A CN110444545B (zh) 2018-05-02 2019-04-30 包括电容元件的集成电路和制造方法
CN201920616986.3U CN210272346U (zh) 2018-05-02 2019-04-30 集成电路
CN202411212126.5A CN119095379A (zh) 2018-05-02 2019-04-30 包括电容元件的集成电路和制造方法
US16/400,286 US10943973B2 (en) 2018-05-02 2019-05-01 Integrated circuit comprising low voltage capacitive elements
US17/165,013 US11605702B2 (en) 2018-05-02 2021-02-02 Method of manufacturing an integrated circuit comprising a capacitive element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1853778 2018-05-02
FR1853778A FR3080948B1 (fr) 2018-05-02 2018-05-02 Circuit integre comprenant un element capacitif, et procede de fabrication

Publications (2)

Publication Number Publication Date
FR3080948A1 FR3080948A1 (fr) 2019-11-08
FR3080948B1 true FR3080948B1 (fr) 2025-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1853778A Active FR3080948B1 (fr) 2018-05-02 2018-05-02 Circuit integre comprenant un element capacitif, et procede de fabrication

Country Status (3)

Country Link
US (2) US10943973B2 (fr)
CN (3) CN210272346U (fr)
FR (1) FR3080948B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3080948B1 (fr) * 2018-05-02 2025-01-17 St Microelectronics Rousset Circuit integre comprenant un element capacitif, et procede de fabrication
FR3108206B1 (fr) * 2020-03-16 2022-04-01 St Microelectronics Rousset Elément capacitif intégré et procédé de fabrication correspondant
JP2021153149A (ja) * 2020-03-24 2021-09-30 キオクシア株式会社 半導体装置
US11695013B2 (en) 2021-10-28 2023-07-04 Nxp Usa, Inc. Capacitor with an electrode well

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Also Published As

Publication number Publication date
CN119095379A (zh) 2024-12-06
US10943973B2 (en) 2021-03-09
CN110444545A (zh) 2019-11-12
CN110444545B (zh) 2024-09-17
US20190341446A1 (en) 2019-11-07
FR3080948A1 (fr) 2019-11-08
US11605702B2 (en) 2023-03-14
CN210272346U (zh) 2020-04-07
US20210159308A1 (en) 2021-05-27

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