FR3085369B1 - Modulateur electro-optique - Google Patents

Modulateur electro-optique Download PDF

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Publication number
FR3085369B1
FR3085369B1 FR1857846A FR1857846A FR3085369B1 FR 3085369 B1 FR3085369 B1 FR 3085369B1 FR 1857846 A FR1857846 A FR 1857846A FR 1857846 A FR1857846 A FR 1857846A FR 3085369 B1 FR3085369 B1 FR 3085369B1
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FR
France
Prior art keywords
electro
optical modulator
waveguide
cavity
present description
Prior art date
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Active
Application number
FR1857846A
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English (en)
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FR3085369A1 (fr
Inventor
Charles Baudot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1857846A priority Critical patent/FR3085369B1/fr
Priority to US16/539,503 priority patent/US11327346B2/en
Priority to CN202410507511.6A priority patent/CN118151419A/zh
Priority to CN201910816684.5A priority patent/CN110873972B/zh
Priority to CN201921432986.4U priority patent/CN211236500U/zh
Publication of FR3085369A1 publication Critical patent/FR3085369A1/fr
Application granted granted Critical
Publication of FR3085369B1 publication Critical patent/FR3085369B1/fr
Priority to US17/661,356 priority patent/US11604371B2/en
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791—Quantum boxes or quantum dots

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente description concerne un modulateur électro-optique (1) comprenant un guide d'onde (101) comportant de multiples puits quantiques (103) dans une cavité (105) du guide d'onde (101).
FR1857846A 2018-08-31 2018-08-31 Modulateur electro-optique Active FR3085369B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1857846A FR3085369B1 (fr) 2018-08-31 2018-08-31 Modulateur electro-optique
US16/539,503 US11327346B2 (en) 2018-08-31 2019-08-13 Electro-optical modulator and methods of formation thereof
CN202410507511.6A CN118151419A (zh) 2018-08-31 2019-08-30 电光调制器及其形成方法
CN201910816684.5A CN110873972B (zh) 2018-08-31 2019-08-30 电光调制器及其形成方法
CN201921432986.4U CN211236500U (zh) 2018-08-31 2019-08-30 电光调制器和光子电路
US17/661,356 US11604371B2 (en) 2018-08-31 2022-04-29 Electro-optical modulator and methods of formation thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1857846A FR3085369B1 (fr) 2018-08-31 2018-08-31 Modulateur electro-optique

Publications (2)

Publication Number Publication Date
FR3085369A1 FR3085369A1 (fr) 2020-03-06
FR3085369B1 true FR3085369B1 (fr) 2021-01-08

Family

ID=65201228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857846A Active FR3085369B1 (fr) 2018-08-31 2018-08-31 Modulateur electro-optique

Country Status (3)

Country Link
US (2) US11327346B2 (fr)
CN (3) CN118151419A (fr)
FR (1) FR3085369B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11500157B1 (en) 2019-03-22 2022-11-15 Ciena Corporation Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness
WO2022235509A1 (fr) * 2021-05-01 2022-11-10 Optonet Inc. Laser à semiconducteur à base de réseau de diffraction compact hautement intégré
WO2025042329A1 (fr) * 2023-08-22 2025-02-27 Agency For Science, Technology And Research Déphaseur et son procédé de formation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2619936B1 (fr) 1987-09-01 1989-12-01 Thomson Csf Modulateur pour onde electromagnetique, a puits quantiques, et utilisation de ce modulateur comme polariseur
FR2667165B1 (fr) * 1990-09-21 1993-07-02 Thomson Csf Modulateur electrooptique multicouche de lumiere.
FR2741195B1 (fr) * 1995-11-10 1997-12-05 Thomson Csf Dispositif a puits quantique et procede de realisation
US5661740A (en) * 1996-04-16 1997-08-26 The United States Of America As Represented By The Secretary Of The Army TEM mode quantum wire or well structure
US7457487B2 (en) * 2004-12-09 2008-11-25 The Board Of Trustees Of The Leland Stanford Junior University Surface parallel modulator
FR2882161B1 (fr) 2005-02-11 2007-05-11 Commissariat Energie Atomique Modulateur a guide d'onde et procede de modulation associe
US8390058B2 (en) * 2009-06-12 2013-03-05 Aplha and Omega Semiconductor Incorporated Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
US8401345B2 (en) * 2010-06-16 2013-03-19 Oracle America, Inc. Optical modulator with three-dimensional waveguide tapers
JP5741583B2 (ja) * 2010-08-03 2015-07-01 住友電気工業株式会社 半導体装置およびその製造方法
JP5812610B2 (ja) * 2011-01-18 2015-11-17 キヤノン株式会社 固体撮像素子及び固体撮像素子を有する撮像システム
CN102169243A (zh) * 2011-04-28 2011-08-31 中国科学院半导体研究所 亚微米波导型Ge量子阱电光调制器
WO2014200920A2 (fr) 2013-06-09 2014-12-18 Seng-Tiong Ho Modulateurs de phase ou d'intensité optique à faible perte optique à large bande passante de modulation très basse tension
US9470952B2 (en) 2013-06-13 2016-10-18 The Regents Of The University Of California Sub-volt drive 100 GHz bandwidth electro-optic modulator
US11150494B2 (en) * 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
GB2552264B (en) * 2016-07-13 2021-06-02 Rockley Photonics Ltd Integrated structure and manufacturing method thereof
US9864136B1 (en) * 2016-08-09 2018-01-09 Globalfoundries Inc. Non-planar monolithic hybrid optoelectronic structures and methods
CN106569350B (zh) * 2016-10-26 2019-04-05 上海交通大学 一种基于Si-VO2复合波导的电光调制器
FR3061961B1 (fr) 2017-01-19 2019-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif photonique comportant un laser optiquement connecte a un guide d'onde silicium et procede de fabrication d'un tel dispositif photonique

Also Published As

Publication number Publication date
FR3085369A1 (fr) 2020-03-06
CN211236500U (zh) 2020-08-11
US11327346B2 (en) 2022-05-10
CN110873972B (zh) 2024-05-14
CN118151419A (zh) 2024-06-07
US20220252912A1 (en) 2022-08-11
US11604371B2 (en) 2023-03-14
CN110873972A (zh) 2020-03-10
US20200073153A1 (en) 2020-03-05

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