FR3089065B1 - Diode électroluminescente et procédé de fabrication d’une diode électroluminescente - Google Patents

Diode électroluminescente et procédé de fabrication d’une diode électroluminescente Download PDF

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Publication number
FR3089065B1
FR3089065B1 FR1871719A FR1871719A FR3089065B1 FR 3089065 B1 FR3089065 B1 FR 3089065B1 FR 1871719 A FR1871719 A FR 1871719A FR 1871719 A FR1871719 A FR 1871719A FR 3089065 B1 FR3089065 B1 FR 3089065B1
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emitting diode
light emitting
manufacturing
light
region
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FR1871719A
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FR3089065A1 (fr
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Ivan-Christophe Robin
Xavier Hugon
Philippe Gilet
Tiphaine Dupont
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Aledia
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Aledia
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Priority to FR1871719A priority Critical patent/FR3089065B1/fr
Priority to CN201980077076.5A priority patent/CN113169207B/zh
Priority to PCT/EP2019/081872 priority patent/WO2020104495A1/fr
Priority to US17/296,110 priority patent/US12166149B2/en
Priority to KR1020217019208A priority patent/KR102715684B1/ko
Priority to EP19805673.1A priority patent/EP3884523A1/fr
Publication of FR3089065A1 publication Critical patent/FR3089065A1/fr
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Publication of FR3089065B1 publication Critical patent/FR3089065B1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • Led Devices (AREA)

Abstract

 Diode électroluminescente et procédé de fabrication d’une diode électroluminescente L’invention a pour objet une diode électroluminescente 100 comprenant une première région 1 par exemple de type P formée dans une première couche 10 et formant, selon une direction normale à un plan basal, un empilement avec une deuxième région 2 comprenant au moins un puit quantique formée dans une deuxième couche 20, et comprenant une troisième région 3 par exemple de type N s’étendant selon la direction normale au plan, en bordure et au contact des première et deuxième régions 1, 2, au travers des première et deuxième couches 10, 20. L’invention a également pour objet un procédé de fabrication d’une diode électroluminescente 100 dans lequel la troisième région 3 est formée par implantation dans et au travers des première et deuxième couches 10, 20. Figure pour l’abrégé : Fig. 9B
FR1871719A 2018-11-22 2018-11-22 Diode électroluminescente et procédé de fabrication d’une diode électroluminescente Active FR3089065B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1871719A FR3089065B1 (fr) 2018-11-22 2018-11-22 Diode électroluminescente et procédé de fabrication d’une diode électroluminescente
CN201980077076.5A CN113169207B (zh) 2018-11-22 2019-11-20 发光二极管及用于制造发光二极管的方法
PCT/EP2019/081872 WO2020104495A1 (fr) 2018-11-22 2019-11-20 Diode électroluminescente et procédé de fabrication d'une diode électroluminescente
US17/296,110 US12166149B2 (en) 2018-11-22 2019-11-20 Light-emitting diode with electrodes on a single face and process of producing the same
KR1020217019208A KR102715684B1 (ko) 2018-11-22 2019-11-20 발광 다이오드 및 발광 다이오드의 제조 방법
EP19805673.1A EP3884523A1 (fr) 2018-11-22 2019-11-20 Diode électroluminescente et procédé de fabrication d'une diode électroluminescente

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1871719A FR3089065B1 (fr) 2018-11-22 2018-11-22 Diode électroluminescente et procédé de fabrication d’une diode électroluminescente

Publications (2)

Publication Number Publication Date
FR3089065A1 FR3089065A1 (fr) 2020-05-29
FR3089065B1 true FR3089065B1 (fr) 2024-11-29

Family

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FR1871719A Active FR3089065B1 (fr) 2018-11-22 2018-11-22 Diode électroluminescente et procédé de fabrication d’une diode électroluminescente

Country Status (6)

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US (1) US12166149B2 (fr)
EP (1) EP3884523A1 (fr)
KR (1) KR102715684B1 (fr)
CN (1) CN113169207B (fr)
FR (1) FR3089065B1 (fr)
WO (1) WO2020104495A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2600426B (en) * 2020-10-28 2022-11-30 Plessey Semiconductors Ltd RGB monolithic integrated high purity microled display device
DE102021200518B3 (de) * 2021-01-21 2021-12-30 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines piezoelektrischen Resonators

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US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US20070096127A1 (en) * 2005-08-26 2007-05-03 Pattison P M Semiconductor micro-cavity light emitting diode
US9118162B2 (en) * 2011-01-14 2015-08-25 University Of Central Florida Research Foundation, Inc. Composite semiconductor light source pumped by a spontaneous light emitter
DE102011112706B4 (de) * 2011-09-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
FR3001334B1 (fr) * 2013-01-24 2016-05-06 Centre Nat De La Rech Scient (Cnrs) Procede de fabrication de diodes blanches monolithiques
FR3003402B1 (fr) * 2013-03-14 2016-11-04 Centre Nat Rech Scient Dispositif monolithique emetteur de lumiere.
US9625647B2 (en) * 2014-01-29 2017-04-18 The University Of Connecticut Optoelectronic integrated circuit
KR102408839B1 (ko) * 2014-06-19 2022-06-14 루미리즈 홀딩 비.브이. 작은 소스 크기를 갖는 파장 변환 발광 디바이스
FR3023061B1 (fr) 2014-06-27 2017-12-15 Commissariat Energie Atomique Diode de structure mesa a surface de contact sensiblement plane
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102015111574A1 (de) * 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
CN105470362B (zh) * 2015-12-31 2018-08-14 天津三安光电有限公司 一种发光二极管的制备方法
JP2017174906A (ja) * 2016-03-22 2017-09-28 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置

Also Published As

Publication number Publication date
EP3884523A1 (fr) 2021-09-29
WO2020104495A1 (fr) 2020-05-28
CN113169207B (zh) 2024-10-29
KR102715684B1 (ko) 2024-10-14
US20210399166A1 (en) 2021-12-23
FR3089065A1 (fr) 2020-05-29
US12166149B2 (en) 2024-12-10
KR20210091805A (ko) 2021-07-22
CN113169207A (zh) 2021-07-23

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