FR3100381B1 - Procédé de fabrication d’une cellule photovoltaïque - Google Patents

Procédé de fabrication d’une cellule photovoltaïque Download PDF

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Publication number
FR3100381B1
FR3100381B1 FR1909500A FR1909500A FR3100381B1 FR 3100381 B1 FR3100381 B1 FR 3100381B1 FR 1909500 A FR1909500 A FR 1909500A FR 1909500 A FR1909500 A FR 1909500A FR 3100381 B1 FR3100381 B1 FR 3100381B1
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France
Prior art keywords
substrate
layer
manufacturing process
photovoltaic cell
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1909500A
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English (en)
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FR3100381A1 (fr
Inventor
RAPHAëL CABAL
Bernadette Grange
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1909500A priority Critical patent/FR3100381B1/fr
Priority to PCT/EP2020/073739 priority patent/WO2021037846A1/fr
Priority to EP20757928.5A priority patent/EP4022688A1/fr
Priority to CN202080060011.2A priority patent/CN114303252B/zh
Publication of FR3100381A1 publication Critical patent/FR3100381A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Ce procédé comporte les étapes : a) prévoir une structure comprenant : - un substrat (1) à base de silicium cristallin ; - une première couche diélectrique (2), comprenant des atomes de bore, et formée sur la première surface (10) du substrat (1) ; - un film d’oxyde tunnel (3), formé sur la seconde surface (11) du substrat ; - une couche de polysilicium (4), formée sur le film d’oxyde tunnel (3) ; - une deuxième couche diélectrique (5), comprenant des atomes de phosphore et/ou d’arsenic, et formée sur la couche de polysilicium (4) ; b) appliquer un traitement thermique à la structure de manière à : - diffuser les atomes de bore sous la première surface (10) du substrat (1), de manière à former une première région semi-conductrice dopée (100) ; - diffuser les atomes de phosphore et/ou d’arsenic dans la couche de polysilicium (4), de manière à doper la couche de polysilicium (4). Figure 3a-3d
FR1909500A 2019-08-29 2019-08-29 Procédé de fabrication d’une cellule photovoltaïque Active FR3100381B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1909500A FR3100381B1 (fr) 2019-08-29 2019-08-29 Procédé de fabrication d’une cellule photovoltaïque
PCT/EP2020/073739 WO2021037846A1 (fr) 2019-08-29 2020-08-25 Procédé de fabrication d'une cellule photovoltaïque
EP20757928.5A EP4022688A1 (fr) 2019-08-29 2020-08-25 Procédé de fabrication d'une cellule photovoltaïque
CN202080060011.2A CN114303252B (zh) 2019-08-29 2020-08-25 用于制造光伏电池的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1909500 2019-08-29
FR1909500A FR3100381B1 (fr) 2019-08-29 2019-08-29 Procédé de fabrication d’une cellule photovoltaïque

Publications (2)

Publication Number Publication Date
FR3100381A1 FR3100381A1 (fr) 2021-03-05
FR3100381B1 true FR3100381B1 (fr) 2021-08-20

Family

ID=68281710

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1909500A Active FR3100381B1 (fr) 2019-08-29 2019-08-29 Procédé de fabrication d’une cellule photovoltaïque

Country Status (4)

Country Link
EP (1) EP4022688A1 (fr)
CN (1) CN114303252B (fr)
FR (1) FR3100381B1 (fr)
WO (1) WO2021037846A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024111625A1 (de) * 2024-04-25 2025-10-30 Hanwha Q Cells Gmbh Solarzelle und Verfahren zur Herstellung einer Solarzelle

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
CN109599450A (zh) * 2013-04-03 2019-04-09 Lg电子株式会社 太阳能电池
US9722104B2 (en) * 2014-11-28 2017-08-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
FR3035740B1 (fr) 2015-04-28 2017-05-12 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique.
CN105895738A (zh) * 2016-04-26 2016-08-24 泰州中来光电科技有限公司 一种钝化接触n型太阳能电池及制备方法和组件、系统
CN106784074A (zh) * 2017-01-24 2017-05-31 泰州乐叶光伏科技有限公司 N型双面电池结构
CN110148636A (zh) * 2018-11-27 2019-08-20 晶澳（扬州）太阳能科技有限公司 一种太阳能电池及其制备方法、光伏组件

Also Published As

Publication number Publication date
FR3100381A1 (fr) 2021-03-05
CN114303252A (zh) 2022-04-08
WO2021037846A1 (fr) 2021-03-04
CN114303252B (zh) 2024-07-16
EP4022688A1 (fr) 2022-07-06

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