FR3100657B1 - Pixel comprenant une photodiode - Google Patents

Pixel comprenant une photodiode Download PDF

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Publication number
FR3100657B1
FR3100657B1 FR1909888A FR1909888A FR3100657B1 FR 3100657 B1 FR3100657 B1 FR 3100657B1 FR 1909888 A FR1909888 A FR 1909888A FR 1909888 A FR1909888 A FR 1909888A FR 3100657 B1 FR3100657 B1 FR 3100657B1
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FR
France
Prior art keywords
photodiode
pixel
transistors
channel transistor
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1909888A
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English (en)
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FR3100657A1 (fr
Inventor
Thomas Dalleau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1909888A priority Critical patent/FR3100657B1/fr
Priority to US17/011,900 priority patent/US11552116B2/en
Publication of FR3100657A1 publication Critical patent/FR3100657A1/fr
Application granted granted Critical
Publication of FR3100657B1 publication Critical patent/FR3100657B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)

Abstract

Pixel comprenant une photodiode La présente description concerne un pixel (170) comprenant une photodiode (102) et des premier (110) et deuxième (176) transistors, les premier et deuxième transistors étant reliés en série, l'un des premier et deuxième transistors étant un transistor à canal P et l'autre étant un transistor à canal N. Figure pour l'abrégé : Fig. 1
FR1909888A 2019-09-09 2019-09-09 Pixel comprenant une photodiode Active FR3100657B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1909888A FR3100657B1 (fr) 2019-09-09 2019-09-09 Pixel comprenant une photodiode
US17/011,900 US11552116B2 (en) 2019-09-09 2020-09-03 Image sensors with multi-channel type transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1909888 2019-09-09
FR1909888A FR3100657B1 (fr) 2019-09-09 2019-09-09 Pixel comprenant une photodiode

Publications (2)

Publication Number Publication Date
FR3100657A1 FR3100657A1 (fr) 2021-03-12
FR3100657B1 true FR3100657B1 (fr) 2023-02-10

Family

ID=69903218

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1909888A Active FR3100657B1 (fr) 2019-09-09 2019-09-09 Pixel comprenant une photodiode

Country Status (2)

Country Link
US (1) US11552116B2 (fr)
FR (1) FR3100657B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085231B1 (fr) * 2018-08-24 2020-09-25 St Microelectronics Crolles 2 Sas Capteur d'images a grande dynamique et faible bruit
US12349493B2 (en) * 2021-07-16 2025-07-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method of the same
FR3137999B1 (fr) * 2022-07-15 2024-06-07 Commissariat Energie Atomique Pixels d'un capteur de lumière

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782463B1 (ko) * 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
US20110267505A1 (en) * 2010-04-29 2011-11-03 Bart Dierickx Pixel with reduced 1/f noise
US9083899B2 (en) * 2013-02-21 2015-07-14 Omnivision Technologies, Inc. Circuit structure for providing conversion gain of a pixel array
US9356066B2 (en) * 2013-03-15 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for stacked device and method
CN204966510U (zh) 2014-06-20 2016-01-13 意法半导体股份有限公司 宽带隙高密度半导体开关器件
US9602750B2 (en) * 2014-11-25 2017-03-21 Semiconductor Components Industries, Llc Image sensor pixels having built-in variable gain feedback amplifier circuitry
CN108781084B (zh) * 2016-03-28 2023-04-28 索尼公司 信号处理装置和方法、摄像元件和电子装置
US10225499B2 (en) * 2016-04-11 2019-03-05 Semiconductor Components Industries, Llc Backside illuminated global shutter pixel with active reset
KR102574973B1 (ko) * 2018-09-17 2023-09-06 에스케이하이닉스 주식회사 P-형 분리 구조를 갖는 이미지 센서

Also Published As

Publication number Publication date
US20210074749A1 (en) 2021-03-11
US11552116B2 (en) 2023-01-10
FR3100657A1 (fr) 2021-03-12

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