FR3102007B1 - Capteur d’images - Google Patents

Capteur d’images Download PDF

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Publication number
FR3102007B1
FR3102007B1 FR1911402A FR1911402A FR3102007B1 FR 3102007 B1 FR3102007 B1 FR 3102007B1 FR 1911402 A FR1911402 A FR 1911402A FR 1911402 A FR1911402 A FR 1911402A FR 3102007 B1 FR3102007 B1 FR 3102007B1
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FR
France
Prior art keywords
image sensor
pixel
rows
pitch
columns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1911402A
Other languages
English (en)
Other versions
FR3102007A1 (fr
Inventor
Jérôme Vaillant
Lucie Dilhan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1911402A priority Critical patent/FR3102007B1/fr
Priority to US17/070,537 priority patent/US11764242B2/en
Priority to CN202011095830.9A priority patent/CN112736100B/zh
Priority to CN202022280879.3U priority patent/CN215220725U/zh
Publication of FR3102007A1 publication Critical patent/FR3102007A1/fr
Application granted granted Critical
Publication of FR3102007B1 publication Critical patent/FR3102007B1/fr
Priority to US18/364,415 priority patent/US12563851B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d’images La présente description concerne un capteur d’images (200) comportant une pluralité de pixels (P) formés dans et sur un substrat semiconducteur (101) et agencés en matrice selon N lignes et M colonnes, avec N entier supérieur ou égal à 1 et M entier supérieur ou égal à 2, et, pour chaque pixel, une microlentille (L) associée au pixel, disposée en vis-à-vis du substrat, les microlentilles étant agencées en matrice selon N lignes et M colonnes, dans lequel, dans la direction des lignes de la matrice de pixels, le pas de la matrice de microlentilles est supérieur au pas de la matrice de pixels. Figure pour l'abrégé : Fig. 2
FR1911402A 2019-10-14 2019-10-14 Capteur d’images Active FR3102007B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1911402A FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images
US17/070,537 US11764242B2 (en) 2019-10-14 2020-10-14 Image sensor with pixel matrix and microlens matrix having differing pitches from each other
CN202011095830.9A CN112736100B (zh) 2019-10-14 2020-10-14 图像传感器
CN202022280879.3U CN215220725U (zh) 2019-10-14 2020-10-14 图像传感器
US18/364,415 US12563851B2 (en) 2019-10-14 2023-08-02 Image sensor with pixel matrix and microlens matrix having differing pitches from each other

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1911402 2019-10-14
FR1911402A FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images

Publications (2)

Publication Number Publication Date
FR3102007A1 FR3102007A1 (fr) 2021-04-16
FR3102007B1 true FR3102007B1 (fr) 2021-10-29

Family

ID=69173025

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1911402A Active FR3102007B1 (fr) 2019-10-14 2019-10-14 Capteur d’images

Country Status (3)

Country Link
US (2) US11764242B2 (fr)
CN (2) CN215220725U (fr)
FR (1) FR3102007B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3102007B1 (fr) * 2019-10-14 2021-10-29 Commissariat Energie Atomique Capteur d’images
CN113690330A (zh) * 2021-03-18 2021-11-23 神盾股份有限公司 光感测模块
US20220359772A1 (en) * 2021-05-10 2022-11-10 Samsung Electronics Co., Ltd. Methods and system of enhanced near-infrared light absorption of imaging systems using metasurfaces and nanostructures
US20230197750A1 (en) 2021-12-17 2023-06-22 Semiconductor Components Industries, Llc Single-photon avalanche diode covered by multiple microlenses
CN116188754A (zh) * 2022-09-08 2023-05-30 上海精积微半导体技术有限公司 特征图案对称中心的位置的获取方法及图像匹配的方法
DE202024105886U1 (de) 2024-10-14 2026-01-15 Sick Ag Bildsensoranordnung
EP4727302A1 (fr) 2024-10-14 2026-04-15 Sick Ag Ensemble capteur d'image

Family Cites Families (22)

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US6495813B1 (en) * 1999-10-12 2002-12-17 Taiwan Semiconductor Manufacturing Company Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process
NO315397B1 (no) * 2001-11-13 2003-08-25 Sinvent As Optisk forskyvnings-sensor
US7851837B2 (en) * 2003-12-18 2010-12-14 Panasonic Corporation Light-collecting device and solid-state imaging apparatus
KR100679856B1 (ko) * 2005-06-09 2007-02-07 (주) 픽셀플러스 좌우상하 비율에 따라 서로 다른 비율로 배치되는마이크로렌즈를 포함하는 이미지 센서
DE102006004802B4 (de) * 2006-01-23 2008-09-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bilderfassungssystem und Verfahren zur Herstellung mindestens eines Bilderfassungssystems
CN101458209A (zh) * 2008-12-04 2009-06-17 重庆大学 基于菲涅耳衍射微透镜阵列的光谱成像装置
FR2945666B1 (fr) * 2009-05-15 2011-12-16 St Microelectronics Sa Capteur d'image.
CN102648431B (zh) * 2009-10-15 2014-12-31 日本电气株式会社 图像投影设备、图像投影方法、距离测量设备和距离测量方法
US8227755B2 (en) * 2010-04-28 2012-07-24 L-3 Communications Corporation Pixel-level optically transitioning filter elements for detector devices
US8324701B2 (en) * 2010-07-16 2012-12-04 Visera Technologies Company Limited Image sensors
FR2974188A1 (fr) * 2011-04-18 2012-10-19 St Microelectronics Sa Dispositif elementaire d'acquisition ou de restitution d'image
JPWO2012161225A1 (ja) * 2011-05-24 2014-07-31 ソニー株式会社 固体撮像素子およびカメラシステム
US8848289B2 (en) * 2012-03-15 2014-09-30 Google Inc. Near-to-eye display with diffractive lens
US8530266B1 (en) * 2012-07-18 2013-09-10 Omnivision Technologies, Inc. Image sensor having metal grid with a triangular cross-section
JP2015129894A (ja) * 2014-01-09 2015-07-16 セイコーエプソン株式会社 マイクロレンズアレイ、マイクロレンズアレイの製造方法、電気光学装置、及び電子機器
CN107004685B (zh) * 2014-12-18 2022-06-14 索尼公司 固体摄像器件和电子装置
US10002899B2 (en) * 2015-09-16 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Microlens for a phase detection auto focus (PDAF) pixel of a composite grid structure
CN105791646B (zh) * 2016-03-16 2019-06-21 中国人民解放军国防科学技术大学 一种光场成像装置及其参数确定方法
WO2020012860A1 (fr) * 2018-07-09 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie et procédé de fabrication d'élément d'imagerie
WO2020035768A1 (fr) * 2018-08-15 2020-02-20 3M Innovative Properties Company Élément optique comprenant un réseau de microlentilles
EP3620829B1 (fr) * 2018-09-07 2022-01-19 Sick Ag Grille lumineuse
FR3102007B1 (fr) * 2019-10-14 2021-10-29 Commissariat Energie Atomique Capteur d’images

Also Published As

Publication number Publication date
US12563851B2 (en) 2026-02-24
US20240030255A1 (en) 2024-01-25
US20210111211A1 (en) 2021-04-15
US11764242B2 (en) 2023-09-19
FR3102007A1 (fr) 2021-04-16
CN215220725U (zh) 2021-12-17
CN112736100A (zh) 2021-04-30
CN112736100B (zh) 2025-08-19

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