FR3122423B3 - Materiau fritte dense de carbure de silicium a tres faible resistivite electrique - Google Patents

Materiau fritte dense de carbure de silicium a tres faible resistivite electrique Download PDF

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FR3122423B3
FR3122423B3 FR2104577A FR2104577A FR3122423B3 FR 3122423 B3 FR3122423 B3 FR 3122423B3 FR 2104577 A FR2104577 A FR 2104577A FR 2104577 A FR2104577 A FR 2104577A FR 3122423 B3 FR3122423 B3 FR 3122423B3
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less
sic
silicon carbide
electrical resistivity
low electrical
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FR3122423A3 (fr
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Giovanni Massasso
Costana Bousquet
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Saint Gobain Centre de Recherche et dEtudes Europeen SAS
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Saint Gobain Centre de Recherche et dEtudes Europeen SAS
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Application filed by Saint Gobain Centre de Recherche et dEtudes Europeen SAS filed Critical Saint Gobain Centre de Recherche et dEtudes Europeen SAS
Priority to KR1020237040769A priority patent/KR20240004649A/ko
Priority to CN202280046421.0A priority patent/CN117580814A/zh
Priority to EP22727955.1A priority patent/EP4330210A1/fr
Priority to PCT/FR2022/050831 priority patent/WO2022229577A1/fr
Priority to JP2023566627A priority patent/JP2024515855A/ja
Priority to US18/557,132 priority patent/US20240208871A1/en
Publication of FR3122423A3 publication Critical patent/FR3122423A3/fr
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    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
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Abstract

Matériau céramique fritté polycristallin de très faible résistivité électrique comprenant en masse : -plus de 95% de carbure de Silicium (SiC), -moins de 1,5% de silicium sous une autre forme que SiC -moins de 2,5% de carbone sous une autre forme que SiC, -moins de 0,5% d’oxygène(O), -moins de 0,5% d’aluminium(Al), -moins de 0,5% des éléments Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb et Lu, -moins de 0,5% d’éléments alcalins, -moins de 0,5% d’alcalino-terreux, -moins de 0,2% de bore (B), -entre 0,1 et 1,5% d’azote (N), -les autres éléments formant le complément à 100%, dont les grains dudit matériau ont un diamètre équivalent médian compris entre 0,5 et 5 micromètres, le rapport massique de SiC alpha (α) / SiC beta (β) est inférieur à 0,1 et la porosité totale représente moins de 15% en pourcentage volumique dudit matériau.
FR2104577A 2021-04-30 2021-04-30 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique Active FR3122423B3 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2104577A FR3122423B3 (fr) 2021-04-30 2021-04-30 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique
CN202280046421.0A CN117580814A (zh) 2021-04-30 2022-04-29 具有极低电阻率的碳化硅致密烧结材料
EP22727955.1A EP4330210A1 (fr) 2021-04-30 2022-04-29 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique
PCT/FR2022/050831 WO2022229577A1 (fr) 2021-04-30 2022-04-29 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique
KR1020237040769A KR20240004649A (ko) 2021-04-30 2022-04-29 매우 낮은 전기 저항률을 갖는 탄화규소 치밀 소결 재료
JP2023566627A JP2024515855A (ja) 2021-04-30 2022-04-29 非常に低い電気抵抗率を有する炭化ケイ素の緻密な焼結材料
US18/557,132 US20240208871A1 (en) 2021-04-30 2022-04-29 Dense sintered material of silicon carbide with very low electrical resistivity

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2104577 2021-04-30
FR2104577A FR3122423B3 (fr) 2021-04-30 2021-04-30 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique

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FR3122423A3 FR3122423A3 (fr) 2022-11-04
FR3122423B3 true FR3122423B3 (fr) 2023-09-08

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FR2104577A Active FR3122423B3 (fr) 2021-04-30 2021-04-30 Materiau fritte dense de carbure de silicium a tres faible resistivite electrique

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US (1) US20240208871A1 (fr)
EP (1) EP4330210A1 (fr)
JP (1) JP2024515855A (fr)
KR (1) KR20240004649A (fr)
CN (1) CN117580814A (fr)
FR (1) FR3122423B3 (fr)
WO (1) WO2022229577A1 (fr)

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US3974106A (en) 1974-05-22 1976-08-10 Norton Company Ceramic electrical resistance igniter
DE2927226A1 (de) * 1979-07-05 1981-01-08 Kempten Elektroschmelz Gmbh Dichte formkoerper aus polykristallinem beta -siliciumcarbid und verfahren zu ihrer herstellung durch heisspressen
US5085804A (en) 1984-11-08 1992-02-04 Norton Company Refractory electrical device
US5045237A (en) 1984-11-08 1991-09-03 Norton Company Refractory electrical device
JPH0672051B2 (ja) * 1985-03-30 1994-09-14 京セラ株式会社 炭化珪素質焼結体及びその製造法
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
JPS62288167A (ja) * 1986-06-05 1987-12-15 信越化学工業株式会社 炭化けい素焼結体の製造方法
JPS6445755A (en) * 1987-08-12 1989-02-20 Hitachi Ltd Ceramic dull roll for rolling, its production and rolling mill using said roll
JPH04270173A (ja) * 1991-02-22 1992-09-25 Toshiba Corp SiC焼結体
JP3483920B2 (ja) * 1993-12-07 2004-01-06 株式会社ブリヂストン 半導体製造装置用高純度β型炭化ケイ素焼結体の製造方法
JP2000247744A (ja) * 1999-02-26 2000-09-12 Kyocera Corp 炭化ケイ素焼結体およびその製造方法
JP4627577B2 (ja) * 1999-10-28 2011-02-09 株式会社ブリヂストン 炭化ケイ素焼結体の製造方法
JP2010189203A (ja) * 2009-02-16 2010-09-02 Sumitomo Osaka Cement Co Ltd SiC系耐摩耗材料およびその製造方法
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WO2019013247A1 (fr) * 2017-07-12 2019-01-17 住友大阪セメント株式会社 CORPS FRITTÉ EN SiC, ÉLÉMENT CHAUFFANT ET PROCÉDÉ DE PRODUCTION D'UN CORPS FRITTÉ EN SiC
CN108911756A (zh) * 2018-08-27 2018-11-30 宁波伏尔肯科技股份有限公司 一种电阻可调的碳化硅陶瓷及其制备方法

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CN117580814A (zh) 2024-02-20
WO2022229577A1 (fr) 2022-11-03
JP2024515855A (ja) 2024-04-10
US20240208871A1 (en) 2024-06-27
FR3122423A3 (fr) 2022-11-04
EP4330210A1 (fr) 2024-03-06
KR20240004649A (ko) 2024-01-11

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