FR3122423B3 - Materiau fritte dense de carbure de silicium a tres faible resistivite electrique - Google Patents
Materiau fritte dense de carbure de silicium a tres faible resistivite electrique Download PDFInfo
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- FR3122423B3 FR3122423B3 FR2104577A FR2104577A FR3122423B3 FR 3122423 B3 FR3122423 B3 FR 3122423B3 FR 2104577 A FR2104577 A FR 2104577A FR 2104577 A FR2104577 A FR 2104577A FR 3122423 B3 FR3122423 B3 FR 3122423B3
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- sic
- silicon carbide
- electrical resistivity
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
- C04B2235/3834—Beta silicon carbide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/401—Alkaline earth metals
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/402—Aluminium
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
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- C04B2235/721—Carbon content
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
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- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
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Abstract
Matériau céramique fritté polycristallin de très faible résistivité électrique comprenant en masse : -plus de 95% de carbure de Silicium (SiC), -moins de 1,5% de silicium sous une autre forme que SiC -moins de 2,5% de carbone sous une autre forme que SiC, -moins de 0,5% d’oxygène(O), -moins de 0,5% d’aluminium(Al), -moins de 0,5% des éléments Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb et Lu, -moins de 0,5% d’éléments alcalins, -moins de 0,5% d’alcalino-terreux, -moins de 0,2% de bore (B), -entre 0,1 et 1,5% d’azote (N), -les autres éléments formant le complément à 100%, dont les grains dudit matériau ont un diamètre équivalent médian compris entre 0,5 et 5 micromètres, le rapport massique de SiC alpha (α) / SiC beta (β) est inférieur à 0,1 et la porosité totale représente moins de 15% en pourcentage volumique dudit matériau.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2104577A FR3122423B3 (fr) | 2021-04-30 | 2021-04-30 | Materiau fritte dense de carbure de silicium a tres faible resistivite electrique |
| CN202280046421.0A CN117580814A (zh) | 2021-04-30 | 2022-04-29 | 具有极低电阻率的碳化硅致密烧结材料 |
| EP22727955.1A EP4330210A1 (fr) | 2021-04-30 | 2022-04-29 | Materiau fritte dense de carbure de silicium a tres faible resistivite electrique |
| PCT/FR2022/050831 WO2022229577A1 (fr) | 2021-04-30 | 2022-04-29 | Materiau fritte dense de carbure de silicium a tres faible resistivite electrique |
| KR1020237040769A KR20240004649A (ko) | 2021-04-30 | 2022-04-29 | 매우 낮은 전기 저항률을 갖는 탄화규소 치밀 소결 재료 |
| JP2023566627A JP2024515855A (ja) | 2021-04-30 | 2022-04-29 | 非常に低い電気抵抗率を有する炭化ケイ素の緻密な焼結材料 |
| US18/557,132 US20240208871A1 (en) | 2021-04-30 | 2022-04-29 | Dense sintered material of silicon carbide with very low electrical resistivity |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2104577 | 2021-04-30 | ||
| FR2104577A FR3122423B3 (fr) | 2021-04-30 | 2021-04-30 | Materiau fritte dense de carbure de silicium a tres faible resistivite electrique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3122423A3 FR3122423A3 (fr) | 2022-11-04 |
| FR3122423B3 true FR3122423B3 (fr) | 2023-09-08 |
Family
ID=77710829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR2104577A Active FR3122423B3 (fr) | 2021-04-30 | 2021-04-30 | Materiau fritte dense de carbure de silicium a tres faible resistivite electrique |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240208871A1 (fr) |
| EP (1) | EP4330210A1 (fr) |
| JP (1) | JP2024515855A (fr) |
| KR (1) | KR20240004649A (fr) |
| CN (1) | CN117580814A (fr) |
| FR (1) | FR3122423B3 (fr) |
| WO (1) | WO2022229577A1 (fr) |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4004934A (en) | 1973-10-24 | 1977-01-25 | General Electric Company | Sintered dense silicon carbide |
| US3974106A (en) | 1974-05-22 | 1976-08-10 | Norton Company | Ceramic electrical resistance igniter |
| DE2927226A1 (de) * | 1979-07-05 | 1981-01-08 | Kempten Elektroschmelz Gmbh | Dichte formkoerper aus polykristallinem beta -siliciumcarbid und verfahren zu ihrer herstellung durch heisspressen |
| US5085804A (en) | 1984-11-08 | 1992-02-04 | Norton Company | Refractory electrical device |
| US5045237A (en) | 1984-11-08 | 1991-09-03 | Norton Company | Refractory electrical device |
| JPH0672051B2 (ja) * | 1985-03-30 | 1994-09-14 | 京セラ株式会社 | 炭化珪素質焼結体及びその製造法 |
| US4701427A (en) * | 1985-10-17 | 1987-10-20 | Stemcor Corporation | Sintered silicon carbide ceramic body of high electrical resistivity |
| JPS62288167A (ja) * | 1986-06-05 | 1987-12-15 | 信越化学工業株式会社 | 炭化けい素焼結体の製造方法 |
| JPS6445755A (en) * | 1987-08-12 | 1989-02-20 | Hitachi Ltd | Ceramic dull roll for rolling, its production and rolling mill using said roll |
| JPH04270173A (ja) * | 1991-02-22 | 1992-09-25 | Toshiba Corp | SiC焼結体 |
| JP3483920B2 (ja) * | 1993-12-07 | 2004-01-06 | 株式会社ブリヂストン | 半導体製造装置用高純度β型炭化ケイ素焼結体の製造方法 |
| JP2000247744A (ja) * | 1999-02-26 | 2000-09-12 | Kyocera Corp | 炭化ケイ素焼結体およびその製造方法 |
| JP4627577B2 (ja) * | 1999-10-28 | 2011-02-09 | 株式会社ブリヂストン | 炭化ケイ素焼結体の製造方法 |
| JP2010189203A (ja) * | 2009-02-16 | 2010-09-02 | Sumitomo Osaka Cement Co Ltd | SiC系耐摩耗材料およびその製造方法 |
| FR2991981A1 (fr) * | 2012-06-15 | 2013-12-20 | Saint Gobain Ct Recherches | Produit en carbure de silicium pour blindage |
| CN104276823B (zh) * | 2013-07-12 | 2016-03-23 | 中国科学院上海硅酸盐研究所 | 高绝缘碳化硅/氮化硼陶瓷材料及其制备方法 |
| KR101483016B1 (ko) * | 2013-08-13 | 2015-01-19 | 서울시립대학교 산학협력단 | 전도성 탄화규소 벌크소재 및 그 조성물 |
| CN104478438A (zh) * | 2014-12-08 | 2015-04-01 | 中国科学院上海硅酸盐研究所 | 一种低电阻率碳化硅陶瓷及其制备方法 |
| KR101681184B1 (ko) * | 2015-02-13 | 2016-11-30 | 서울시립대학교 산학협력단 | 전기전도성 상압소결 탄화규소 소재 제조용 조성물, 탄화규소 소재 및 그 제조방법 |
| WO2019013247A1 (fr) * | 2017-07-12 | 2019-01-17 | 住友大阪セメント株式会社 | CORPS FRITTÉ EN SiC, ÉLÉMENT CHAUFFANT ET PROCÉDÉ DE PRODUCTION D'UN CORPS FRITTÉ EN SiC |
| CN108911756A (zh) * | 2018-08-27 | 2018-11-30 | 宁波伏尔肯科技股份有限公司 | 一种电阻可调的碳化硅陶瓷及其制备方法 |
-
2021
- 2021-04-30 FR FR2104577A patent/FR3122423B3/fr active Active
-
2022
- 2022-04-29 WO PCT/FR2022/050831 patent/WO2022229577A1/fr not_active Ceased
- 2022-04-29 CN CN202280046421.0A patent/CN117580814A/zh active Pending
- 2022-04-29 US US18/557,132 patent/US20240208871A1/en active Pending
- 2022-04-29 JP JP2023566627A patent/JP2024515855A/ja active Pending
- 2022-04-29 KR KR1020237040769A patent/KR20240004649A/ko active Pending
- 2022-04-29 EP EP22727955.1A patent/EP4330210A1/fr active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN117580814A (zh) | 2024-02-20 |
| WO2022229577A1 (fr) | 2022-11-03 |
| JP2024515855A (ja) | 2024-04-10 |
| US20240208871A1 (en) | 2024-06-27 |
| FR3122423A3 (fr) | 2022-11-04 |
| EP4330210A1 (fr) | 2024-03-06 |
| KR20240004649A (ko) | 2024-01-11 |
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