FR3126545B1 - Capteur d’image avec circuit de commande - Google Patents

Capteur d’image avec circuit de commande Download PDF

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Publication number
FR3126545B1
FR3126545B1 FR2109100A FR2109100A FR3126545B1 FR 3126545 B1 FR3126545 B1 FR 3126545B1 FR 2109100 A FR2109100 A FR 2109100A FR 2109100 A FR2109100 A FR 2109100A FR 3126545 B1 FR3126545 B1 FR 3126545B1
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FR
France
Prior art keywords
control circuit
image sensor
potential
substrate
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2109100A
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English (en)
Other versions
FR3126545A1 (fr
Inventor
Laurent Simony
Frederic Lalanne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2109100A priority Critical patent/FR3126545B1/fr
Priority to US17/885,960 priority patent/US12356101B2/en
Priority to CN202211057757.5A priority patent/CN115767296B/zh
Publication of FR3126545A1 publication Critical patent/FR3126545A1/fr
Application granted granted Critical
Publication of FR3126545B1 publication Critical patent/FR3126545B1/fr
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d’image avec circuit de commande La présente description concerne un capteur d’image (2) comprenant une matrice (100) de pixels (10) dans et sur un substrat (40a) ; un circuit de commande (20) configuré pour appliquer au substrat (40a) : pendant une première phase (R), un potentiel (Vpixsub2) de masse (GND) ; et pendant une deuxième phase (I), un potentiel (Vpixsub1) positif par rapport au potentiel de masse. Figure pour l'abrégé : Fig. 2B
FR2109100A 2021-08-31 2021-08-31 Capteur d’image avec circuit de commande Active FR3126545B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2109100A FR3126545B1 (fr) 2021-08-31 2021-08-31 Capteur d’image avec circuit de commande
US17/885,960 US12356101B2 (en) 2021-08-31 2022-08-11 Image sensor with a control circuit
CN202211057757.5A CN115767296B (zh) 2021-08-31 2022-08-30 具有控制电路的图像传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2109100 2021-08-31
FR2109100A FR3126545B1 (fr) 2021-08-31 2021-08-31 Capteur d’image avec circuit de commande

Publications (2)

Publication Number Publication Date
FR3126545A1 FR3126545A1 (fr) 2023-03-03
FR3126545B1 true FR3126545B1 (fr) 2024-10-25

Family

ID=80447648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2109100A Active FR3126545B1 (fr) 2021-08-31 2021-08-31 Capteur d’image avec circuit de commande

Country Status (2)

Country Link
US (1) US12356101B2 (fr)
FR (1) FR3126545B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003271499A1 (en) 2002-10-29 2004-05-25 Photonfocus Ag Optoelectronic sensor
JP4752926B2 (ja) * 2009-02-05 2011-08-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、電子機器
US9118883B2 (en) * 2011-11-28 2015-08-25 Semiconductor Components Industries, Llc High dynamic range imaging with multi-storage pixels
JP2014209696A (ja) * 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
FR3018653B1 (fr) 2014-03-11 2016-03-04 E2V Semiconductors Procede de capture d'image avec reduction de courant d'obscurite et faible consommation
FR3039928B1 (fr) 2015-08-03 2019-06-07 Teledyne E2V Semiconductors Sas Procede de commande d'un capteur d'image a pixels actifs
FR3046897B1 (fr) 2016-01-19 2018-01-19 Teledyne E2V Semiconductors Sas Procede de commande d'un capteur d'image a pixels actifs
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
US10623655B2 (en) 2018-05-30 2020-04-14 Semiconductor Components Industries, Llc Image sensors with light flicker mitigation capabilities
US11107847B2 (en) 2019-04-19 2021-08-31 BAE Systems Imaging Solutions Inc. Pixel and imaging array with reduced dark current adapted to low light imaging

Also Published As

Publication number Publication date
US12356101B2 (en) 2025-07-08
US20230071932A1 (en) 2023-03-09
FR3126545A1 (fr) 2023-03-03

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