FR3130072B1 - Procédé de fabrication d’un dispositif optoélectronique - Google Patents

Procédé de fabrication d’un dispositif optoélectronique Download PDF

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Publication number
FR3130072B1
FR3130072B1 FR2113065A FR2113065A FR3130072B1 FR 3130072 B1 FR3130072 B1 FR 3130072B1 FR 2113065 A FR2113065 A FR 2113065A FR 2113065 A FR2113065 A FR 2113065A FR 3130072 B1 FR3130072 B1 FR 3130072B1
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France
Prior art keywords
zone
optoelectronic device
structures
growth
manufacturing process
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FR2113065A
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English (en)
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FR3130072A1 (fr
Inventor
Emmanuel Petitprez
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Aledia
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Aledia
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Priority to FR2113065A priority Critical patent/FR3130072B1/fr
Priority to PCT/EP2022/083944 priority patent/WO2023104611A1/fr
Priority to EP22822592.6A priority patent/EP4445409A1/fr
Priority to TW111146655A priority patent/TW202329213A/zh
Publication of FR3130072A1 publication Critical patent/FR3130072A1/fr
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Publication of FR3130072B1 publication Critical patent/FR3130072B1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Titre : Procédé de fabrication d’un dispositif optoélectronique L’invention a pour objet un procédé de fabrication d’un dispositif optoélectronique comprenant une première zone (100) comprenant une pluralité de structures tridimensionnelles (3D), et une deuxième zone (200) dépourvue desdites structures 3D, ledit procédé comprenant au moins une fourniture d’un substrat (1) comprenant une couche superficielle (2) permettant la nucléation et la croissance des structures 3D, une formation d’une couche tampon (4) couvrant le substrat (1) au niveau de la deuxième zone (200), sans couvrir la première zone (100), une croissance des structures 3D (6) dans la première zone (100) à partir de la couche superficielle (2), ladite croissance formant des résidus (7) au-dessus de la couche tampon (4), dans la deuxième zone (200), et une première gravure configurée pour éliminer les résidus (7) et pour s’arrêter dans la couche tampon (4). Figure pour l’abrégé : Fig. 10
FR2113065A 2021-12-07 2021-12-07 Procédé de fabrication d’un dispositif optoélectronique Active FR3130072B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2113065A FR3130072B1 (fr) 2021-12-07 2021-12-07 Procédé de fabrication d’un dispositif optoélectronique
PCT/EP2022/083944 WO2023104611A1 (fr) 2021-12-07 2022-11-30 Procédé de fabrication d'un dispositif optoélectronique
EP22822592.6A EP4445409A1 (fr) 2021-12-07 2022-11-30 Procédé de fabrication d'un dispositif optoélectronique
TW111146655A TW202329213A (zh) 2021-12-07 2022-12-06 製造光電子器件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2113065 2021-12-07
FR2113065A FR3130072B1 (fr) 2021-12-07 2021-12-07 Procédé de fabrication d’un dispositif optoélectronique

Publications (2)

Publication Number Publication Date
FR3130072A1 FR3130072A1 (fr) 2023-06-09
FR3130072B1 true FR3130072B1 (fr) 2024-08-23

Family

ID=81448563

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2113065A Active FR3130072B1 (fr) 2021-12-07 2021-12-07 Procédé de fabrication d’un dispositif optoélectronique

Country Status (4)

Country Link
EP (1) EP4445409A1 (fr)
FR (1) FR3130072B1 (fr)
TW (1) TW202329213A (fr)
WO (1) WO2023104611A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064908B1 (ko) 2008-11-12 2011-09-16 연세대학교 산학협력단 신규의 희생층 재료를 이용한 기판 상에서의 나노와이어 패터닝 방법
US9012310B2 (en) * 2012-06-11 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial formation of source and drain regions
US9520466B2 (en) * 2015-03-16 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical gate-all-around field effect transistors and methods of forming same
DE102016101559A1 (de) * 2016-01-28 2017-08-03 Infineon Technologies Austria Ag Verfahren zum herstellen von halbleitervorrichtungen, einschliesslich einer abscheidung von kristallinem silizium in gräben
FR3053054B1 (fr) * 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels

Also Published As

Publication number Publication date
TW202329213A (zh) 2023-07-16
EP4445409A1 (fr) 2024-10-16
FR3130072A1 (fr) 2023-06-09
WO2023104611A1 (fr) 2023-06-15

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