FR3131076B1 - Procede de formation d’un dispositif comprenant du graphene - Google Patents

Procede de formation d’un dispositif comprenant du graphene Download PDF

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Publication number
FR3131076B1
FR3131076B1 FR2114282A FR2114282A FR3131076B1 FR 3131076 B1 FR3131076 B1 FR 3131076B1 FR 2114282 A FR2114282 A FR 2114282A FR 2114282 A FR2114282 A FR 2114282A FR 3131076 B1 FR3131076 B1 FR 3131076B1
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FR
France
Prior art keywords
graphene film
graphene
forming
substrate
functionalization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2114282A
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English (en)
Other versions
FR3131076A1 (fr
Inventor
Vincent Bouchiat
Behnaz Djoharian
Riadh Othmen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grapheal
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Grapheal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2114282A priority Critical patent/FR3131076B1/fr
Application filed by Grapheal filed Critical Grapheal
Priority to IL313671A priority patent/IL313671A/en
Priority to US18/722,712 priority patent/US20250133798A1/en
Priority to EP22847587.7A priority patent/EP4454438A1/fr
Priority to JP2024537476A priority patent/JP2025505344A/ja
Priority to KR1020247023711A priority patent/KR20240137573A/ko
Priority to PCT/FR2022/052431 priority patent/WO2023118723A1/fr
Priority to CN202280085519.7A priority patent/CN118633363A/zh
Publication of FR3131076A1 publication Critical patent/FR3131076A1/fr
Application granted granted Critical
Publication of FR3131076B1 publication Critical patent/FR3131076B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/031—Manufacture or treatment of three-or-more electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L’invention concerne un procédé de formation d’un dispositif (5) comprenant du graphène, le procédé comprenant les étapes suivantes : - une étape S1 de formation d’un film de graphène (1) sur un substrat (2); - une étape S2 de dépôt sur le film de graphène (1) d’un matériau de fonctionnalisation (3) configuré pour modifier des propriétés physico chimiques du film de graphène (1), le dépôt de matériau de fonctionnalisation étant configuré pour couvrir partiellement le film de graphène (1) ; - une étape S3 de dépôt en phase gazeuse d’un matériau polymère (4) couvrant le film de graphène (1) et le matériau de fonctionnalisation (3) ; et - une étape S4 de retrait du substrat (2) de sorte que le matériau polymère (4) forme un support pour le film de graphène (1). Figure pour l’abrégé : Fig. 1
FR2114282A 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene Active FR3131076B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2114282A FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene
US18/722,712 US20250133798A1 (en) 2021-12-22 2022-12-20 Method for forming a device comprising graphene
EP22847587.7A EP4454438A1 (fr) 2021-12-22 2022-12-20 Procédé de formation d'un dispositif comprenant du graphène
JP2024537476A JP2025505344A (ja) 2021-12-22 2022-12-20 グラフェンを含むデバイスの形成方法
IL313671A IL313671A (en) 2021-12-22 2022-12-20 Method for forming a device comprising graphene
KR1020247023711A KR20240137573A (ko) 2021-12-22 2022-12-20 그래핀을 포함하는 디바이스를 형성하기 위한 방법
PCT/FR2022/052431 WO2023118723A1 (fr) 2021-12-22 2022-12-20 Procédé de formation d'un dispositif comprenant du graphène
CN202280085519.7A CN118633363A (zh) 2021-12-22 2022-12-20 用于形成包括石墨烯的器件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2114282A FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene
FR2114282 2021-12-22

Publications (2)

Publication Number Publication Date
FR3131076A1 FR3131076A1 (fr) 2023-06-23
FR3131076B1 true FR3131076B1 (fr) 2024-04-19

Family

ID=81346407

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2114282A Active FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene

Country Status (8)

Country Link
US (1) US20250133798A1 (fr)
EP (1) EP4454438A1 (fr)
JP (1) JP2025505344A (fr)
KR (1) KR20240137573A (fr)
CN (1) CN118633363A (fr)
FR (1) FR3131076B1 (fr)
IL (1) IL313671A (fr)
WO (1) WO2023118723A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121398960A (zh) * 2023-06-27 2026-01-23 层逻辑公司 石墨烯结构的可规模化生产
EP4575481A1 (fr) 2023-12-22 2025-06-25 Grapheal Capteur de gaz comprenant une couche de graphène

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3033554B1 (fr) 2015-03-09 2020-01-31 Centre National De La Recherche Scientifique Procede de formation d'un dispositif en graphene
HK1258239A1 (zh) * 2015-10-07 2019-11-08 加利福尼亚大学校董会 石墨烯系多模态传感器
CN108101027B (zh) * 2017-12-29 2020-01-31 重庆墨希科技有限公司 大面积cvd石墨烯掺杂转移方法

Also Published As

Publication number Publication date
FR3131076A1 (fr) 2023-06-23
US20250133798A1 (en) 2025-04-24
KR20240137573A (ko) 2024-09-20
CN118633363A (zh) 2024-09-10
IL313671A (en) 2024-08-01
JP2025505344A (ja) 2025-02-26
WO2023118723A1 (fr) 2023-06-29
EP4454438A1 (fr) 2024-10-30

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