FR3132979B1 - Capteur de lumière ambiante - Google Patents

Capteur de lumière ambiante Download PDF

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Publication number
FR3132979B1
FR3132979B1 FR2201567A FR2201567A FR3132979B1 FR 3132979 B1 FR3132979 B1 FR 3132979B1 FR 2201567 A FR2201567 A FR 2201567A FR 2201567 A FR2201567 A FR 2201567A FR 3132979 B1 FR3132979 B1 FR 3132979B1
Authority
FR
France
Prior art keywords
box
ambient light
light sensor
node
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2201567A
Other languages
English (en)
Other versions
FR3132979A1 (fr
Inventor
Nicolas Moeneclaey
Laurent Vaccariello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Original Assignee
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS, STMicroelectronics Alps SAS filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR2201567A priority Critical patent/FR3132979B1/fr
Priority to US18/112,056 priority patent/US12615056B2/en
Priority to CN202310148306.0A priority patent/CN116642583A/zh
Priority to CN202320279529.6U priority patent/CN220230724U/zh
Publication of FR3132979A1 publication Critical patent/FR3132979A1/fr
Application granted granted Critical
Publication of FR3132979B1 publication Critical patent/FR3132979B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/448—Array [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

Capteur de lumière ambiante La présente description concerne un capteur de lumière ambiante (1) comprenant une pluralité de pixels (P1) comportant chacun un caisson isolé dopé d'un premier type, une photodiode pincée dans le caisson, une région (212) dopée d'un deuxième type et disposée dans le caisson, une grille de transfert couplant la photodiode à ladite région (212), et un premier circuit appliquant un premier ou deuxième potentiel au caisson. Un convertisseur analogique-numérique à approximations successives (100) du capteur comprend un noeud (SN1) connecté auxdites régions (212) des pixels (P1), un interrupteur (IT1) appliquant un troisième potentiel (V3) audit noeud (SN1), un comparateur (104) couplé audit noeud (SN1), et un deuxième circuit (SAR) recevant une sortie (COMP) du comparateur et commandant les premiers circuits. Un circuit de commande (CTRL) du capteur commande les grilles et le premier interrupteur (IT1). Figure pour l'abrégé : Fig. 1
FR2201567A 2022-02-22 2022-02-22 Capteur de lumière ambiante Active FR3132979B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2201567A FR3132979B1 (fr) 2022-02-22 2022-02-22 Capteur de lumière ambiante
US18/112,056 US12615056B2 (en) 2022-02-22 2023-02-21 Ambient light sensor
CN202310148306.0A CN116642583A (zh) 2022-02-22 2023-02-22 环境光传感器
CN202320279529.6U CN220230724U (zh) 2022-02-22 2023-02-22 环境光传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2201567A FR3132979B1 (fr) 2022-02-22 2022-02-22 Capteur de lumière ambiante
FR2201567 2022-02-22

Publications (2)

Publication Number Publication Date
FR3132979A1 FR3132979A1 (fr) 2023-08-25
FR3132979B1 true FR3132979B1 (fr) 2024-02-23

Family

ID=81346299

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2201567A Active FR3132979B1 (fr) 2022-02-22 2022-02-22 Capteur de lumière ambiante

Country Status (3)

Country Link
US (1) US12615056B2 (fr)
CN (2) CN116642583A (fr)
FR (1) FR3132979B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3132979B1 (fr) * 2022-02-22 2024-02-23 St Microelectronics Grenoble 2 Capteur de lumière ambiante

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9369648B2 (en) 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
US10249656B2 (en) 2016-06-07 2019-04-02 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
US10001406B2 (en) * 2016-06-07 2018-06-19 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
US10192922B2 (en) 2016-06-07 2019-01-29 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
FR3132979B1 (fr) 2022-02-22 2024-02-23 St Microelectronics Grenoble 2 Capteur de lumière ambiante

Also Published As

Publication number Publication date
CN220230724U (zh) 2023-12-22
US12615056B2 (en) 2026-04-28
CN116642583A (zh) 2023-08-25
FR3132979A1 (fr) 2023-08-25
US20230268928A1 (en) 2023-08-24

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