FR3136316B3 - Cellule photovoltaïque et module photovoltaïque - Google Patents

Cellule photovoltaïque et module photovoltaïque Download PDF

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Publication number
FR3136316B3
FR3136316B3 FR2212572A FR2212572A FR3136316B3 FR 3136316 B3 FR3136316 B3 FR 3136316B3 FR 2212572 A FR2212572 A FR 2212572A FR 2212572 A FR2212572 A FR 2212572A FR 3136316 B3 FR3136316 B3 FR 3136316B3
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FR
France
Prior art keywords
doping
photovoltaic
substrate
passivation layer
region
Prior art date
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Active
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FR2212572A
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English (en)
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FR3136316A3 (fr
Inventor
Jie Mao
Menglei Xu
Peiting Zheng
Jie Yang
Xinyu Zhang
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JinkoSolar Haining Co Ltd
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JinkoSolar Haining Co Ltd
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Filing date
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Priority claimed from CN202210611083.2A external-priority patent/CN114695579B/zh
Priority claimed from CN202210611082.8A external-priority patent/CN114695578B/zh
Application filed by JinkoSolar Haining Co Ltd filed Critical JinkoSolar Haining Co Ltd
Publication of FR3136316A3 publication Critical patent/FR3136316A3/fr
Application granted granted Critical
Publication of FR3136316B3 publication Critical patent/FR3136316B3/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Il est mis à disposition une cellule photovoltaïque comprenant : un substrat ; une couche d'effet tunnel, une couche de passivation par effet de champ, un premier film de passivation, et une première électrode, qui sont disposés en séquence sur une surface arrière du substrat. La première électrode pénètre dans le premier film de passivation et est en contact avec la couche de passivation par effet de champ. La concentration de dopage du premier élément dopant dans la couche d'effet tunnel est inférieure à la concentration de dopage du premier élément dopant dans la couche de passivation par effet de champ, et la concentration de dopage du premier élément dopant dans la couche d'effet tunnel est supérieure à la concentration de dopage du premier élément dopant dans le substrat. La couche de passivation par effet de champ comprend une première région de dopage et une deuxième région de dopage, et la pente de courbe de dopage de la première région de dopage est supérieure à la pente de courbe de dopage de la deuxième région de dopage [Fig. 2] .
FR2212572A 2022-06-01 2022-11-30 Cellule photovoltaïque et module photovoltaïque Active FR3136316B3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202210611083.2A CN114695579B (zh) 2022-06-01 2022-06-01 太阳能电池及光伏组件
CN202210611082.8 2022-06-01
CN202210611082.8A CN114695578B (zh) 2022-06-01 2022-06-01 太阳能电池及光伏组件
CN202210611083.2 2022-06-01

Publications (2)

Publication Number Publication Date
FR3136316A3 FR3136316A3 (fr) 2023-12-08
FR3136316B3 true FR3136316B3 (fr) 2024-06-14

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FR2212572A Active FR3136316B3 (fr) 2022-06-01 2022-11-30 Cellule photovoltaïque et module photovoltaïque

Country Status (9)

Country Link
US (1) US12159952B2 (fr)
EP (1) EP4287267B1 (fr)
JP (2) JP7490021B2 (fr)
AT (1) AT18393U1 (fr)
AU (1) AU2022204658B1 (fr)
DE (1) DE202022106692U1 (fr)
FR (1) FR3136316B3 (fr)
GB (2) GB2617526B (fr)
NL (1) NL2033699B1 (fr)

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US12159952B2 (en) 2024-12-03
JP2023177189A (ja) 2023-12-13
JP2023177241A (ja) 2023-12-13
GB202312290D0 (en) 2023-09-27
EP4287267B1 (fr) 2024-12-25
US20230395740A1 (en) 2023-12-07
AT18393U1 (de) 2025-01-15
NL2033699A (en) 2023-12-12
FR3136316A3 (fr) 2023-12-08
AU2022204658B1 (en) 2023-11-23
JP7515650B2 (ja) 2024-07-12
GB2617526B (en) 2025-06-04
EP4287267A1 (fr) 2023-12-06
GB2611203A8 (en) 2023-04-26
GB2617526A (en) 2023-10-11
GB2611203B (en) 2023-09-27
DE202022106692U1 (de) 2022-12-13
GB202218026D0 (en) 2023-01-11
JP7490021B2 (ja) 2024-05-24
GB2611203A (en) 2023-03-29
NL2033699B1 (en) 2024-01-30

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