FR3138965B1 - Transistor MOSFET - Google Patents

Transistor MOSFET

Info

Publication number
FR3138965B1
FR3138965B1 FR2208404A FR2208404A FR3138965B1 FR 3138965 B1 FR3138965 B1 FR 3138965B1 FR 2208404 A FR2208404 A FR 2208404A FR 2208404 A FR2208404 A FR 2208404A FR 3138965 B1 FR3138965 B1 FR 3138965B1
Authority
FR
France
Prior art keywords
mosfet transistor
transistor
length
gate insulator
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2208404A
Other languages
English (en)
Other versions
FR3138965A1 (fr
Inventor
Franck Julien
Julien Delalleau
Julien Dura
Julien Amouroux
Stephane Monfray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Rousset SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2208404A priority Critical patent/FR3138965B1/fr
Priority to US18/230,423 priority patent/US20240063280A1/en
Priority to CN202322226558.9U priority patent/CN221239617U/zh
Priority to CN202311043317.9A priority patent/CN117594642A/zh
Publication of FR3138965A1 publication Critical patent/FR3138965A1/fr
Application granted granted Critical
Publication of FR3138965B1 publication Critical patent/FR3138965B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

Transistor MOSFET La présente description concerne un transistor (200) comportant, sur une couche semiconductrice (220), un empilement d'un isolant de grille (232) et d'une région de grille (230) sur l’isolant de grille, dans lequel la région de grille comprend une première portion (230A) et une deuxième portion (230B) entre la première portion et l’isolant de grille, la première portion présente une première longueur (L3A) dans une première direction (X) latérale du transistor, et la deuxième portion présente une deuxième longueur (L3B) dans la première direction (X) inférieure à la première longueur. Figure pour l'abrégé : Fig. 2
FR2208404A 2022-08-19 2022-08-19 Transistor MOSFET Active FR3138965B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2208404A FR3138965B1 (fr) 2022-08-19 2022-08-19 Transistor MOSFET
US18/230,423 US20240063280A1 (en) 2022-08-19 2023-08-04 Mosfet transistor
CN202322226558.9U CN221239617U (zh) 2022-08-19 2023-08-18 晶体管、电子器件及射频开关
CN202311043317.9A CN117594642A (zh) 2022-08-19 2023-08-18 Mosfet晶体管

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2208404A FR3138965B1 (fr) 2022-08-19 2022-08-19 Transistor MOSFET
FR2208404 2022-08-19

Publications (2)

Publication Number Publication Date
FR3138965A1 FR3138965A1 (fr) 2024-02-23
FR3138965B1 true FR3138965B1 (fr) 2026-04-17

Family

ID=83506619

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2208404A Active FR3138965B1 (fr) 2022-08-19 2022-08-19 Transistor MOSFET

Country Status (3)

Country Link
US (1) US20240063280A1 (fr)
CN (2) CN221239617U (fr)
FR (1) FR3138965B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2791177A1 (fr) * 1999-03-19 2000-09-22 France Telecom Procede de realisation d'une grille en forme de champignon ou grille en "t"
JP2005203501A (ja) * 2004-01-14 2005-07-28 Toshiba Corp 半導体装置およびその製造方法
JP4580657B2 (ja) * 2004-01-30 2010-11-17 株式会社東芝 半導体装置およびその製造方法
KR102514620B1 (ko) * 2016-04-28 2023-03-29 삼성전자주식회사 반도체 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
FR3138965A1 (fr) 2024-02-23
CN221239617U (zh) 2024-06-28
US20240063280A1 (en) 2024-02-22
CN117594642A (zh) 2024-02-23

Similar Documents

Publication Publication Date Title
US9893168B2 (en) Split gate semiconductor device with curved gate oxide profile
WO2020142345A3 (fr) Transistors à haute mobilité électronique présentant des améliorations relatives aux caractéristiques de dérive de courant de drain et/ou aux caractéristiques de courant de fuite
CN103000691B (zh) 半鳍式fet半导体器件及其制造方法
US7605442B2 (en) Semiconductor device
US8154050B2 (en) Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same
WO2003026019A1 (fr) Dispositif a semi-conducteurs et procede de production correspondant
WO2004064172A3 (fr) Transistor a effet de champ a metal-oxyde-semi-conducteur ameliore et son procede de formation
MY128473A (en) Group-iii nitride based high electron mobility transistor(hemt) with barrier/ spacer layer
US20080079097A1 (en) Semiconductor device and method of fabricating the same
FR3138965B1 (fr) Transistor MOSFET
FR3080486B1 (fr) Procede de formation d'un dispositif microelectronique
US20070131969A1 (en) Semiconductor device and method of manufacturing the same
US7381604B2 (en) Strained-channel semiconductor structure and method for fabricating the same
US20070267694A1 (en) Transistors with stressed channels and methods of manufacture
US7948063B2 (en) Semiconductor device with stress control film utilizing film thickness
US20070001217A1 (en) Closed loop CESL high performance CMOS devices
EP0746041A3 (fr) Canal d'un MOSFET et méthode de fabrication
JPS61263274A (ja) 半導体装置の製造方法
JP2007311574A (ja) 半導体装置及びその製造方法
FR3115156B1 (fr) Transistor à nitrure de gallium
FR3143199B1 (fr) Transistor HEMT
FR3135827B1 (fr) Transistor
FR3112421B1 (fr) Procédé de réalisation d’une structure d’isolation
HK1007632A1 (en) Low output-capacity, double -diffused field effect transistor
FR3145836B1 (fr) Transistor HEMT

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20240223

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4