FR3142829B1 - Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence - Google Patents

Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence

Info

Publication number
FR3142829B1
FR3142829B1 FR2212757A FR2212757A FR3142829B1 FR 3142829 B1 FR3142829 B1 FR 3142829B1 FR 2212757 A FR2212757 A FR 2212757A FR 2212757 A FR2212757 A FR 2212757A FR 3142829 B1 FR3142829 B1 FR 3142829B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
radio frequency
power electronic
frequency device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2212757A
Other languages
English (en)
Other versions
FR3142829A1 (fr
Inventor
Hugo Biard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2212757A priority Critical patent/FR3142829B1/fr
Priority to JP2025532133A priority patent/JP2025538707A/ja
Priority to PCT/FR2023/051931 priority patent/WO2024121504A1/fr
Priority to EP23833178.9A priority patent/EP4631094A1/fr
Priority to CN202380083223.6A priority patent/CN120303766A/zh
Priority to KR1020257020181A priority patent/KR20250120299A/ko
Publication of FR3142829A1 publication Critical patent/FR3142829A1/fr
Application granted granted Critical
Publication of FR3142829B1 publication Critical patent/FR3142829B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L’invention concerne un procédé de fabrication d’un substrat (15) pour un dispositif électronique de puissance ou radiofréquence, comprenant la formation d’un substrat support (10) comprenant un dépôt d’au moins une couche (100) de carbure de silicium polycristallin par dépôt chimique en phase vapeur (CVD) dans des conditions choisies pour former des inclusions de carbone (1) dans ladite couche de carbure de silicium, et l’assemblage du substrat support (10) et d’une couche superficielle (20) en un matériau monocristallin. Figure pour l’abrégé : Fig 2A
FR2212757A 2022-12-05 2022-12-05 Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence Active FR3142829B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR2212757A FR3142829B1 (fr) 2022-12-05 2022-12-05 Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence
JP2025532133A JP2025538707A (ja) 2022-12-05 2023-12-05 無線周波数又は電力エレクトロニクスデバイス用の基板を製造するための方法
PCT/FR2023/051931 WO2024121504A1 (fr) 2022-12-05 2023-12-05 Procédé de fabrication d'un substrat pour un dispositif électronique de puissance ou radiofréquence
EP23833178.9A EP4631094A1 (fr) 2022-12-05 2023-12-05 Procédé de fabrication d'un substrat pour un dispositif électronique de puissance ou radiofréquence
CN202380083223.6A CN120303766A (zh) 2022-12-05 2023-12-05 制造用于电子功率或射频器件的基底的方法
KR1020257020181A KR20250120299A (ko) 2022-12-05 2023-12-05 무선 주파수 또는 전력 전자 디바이스용 기판을 제조하기 위한 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2212757 2022-12-05
FR2212757A FR3142829B1 (fr) 2022-12-05 2022-12-05 Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence

Publications (2)

Publication Number Publication Date
FR3142829A1 FR3142829A1 (fr) 2024-06-07
FR3142829B1 true FR3142829B1 (fr) 2026-01-02

Family

ID=85685440

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2212757A Active FR3142829B1 (fr) 2022-12-05 2022-12-05 Procédé de fabrication d’un substrat pour un dispositif électronique de puissance ou radiofréquence

Country Status (6)

Country Link
EP (1) EP4631094A1 (fr)
JP (1) JP2025538707A (fr)
KR (1) KR20250120299A (fr)
CN (1) CN120303766A (fr)
FR (1) FR3142829B1 (fr)
WO (1) WO2024121504A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117533A (ja) * 2007-11-05 2009-05-28 Shin Etsu Chem Co Ltd 炭化珪素基板の製造方法
JP6619874B2 (ja) * 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法
FR3108775B1 (fr) * 2020-03-27 2022-02-18 Soitec Silicon On Insulator Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
KR20230004728A (ko) * 2020-06-01 2023-01-06 미쓰비시덴키 가부시키가이샤 복합 기판, 복합 기판의 제조 방법, 반도체 장치 및 반도체 장치의 제조 방법
FR3120737B1 (fr) * 2021-03-09 2024-11-15 Soitec Silicon On Insulator Procede de fabrication d’une structure semi-conductrice a base de carbure de silicium et structure composite intermediaire
FR3134234B1 (fr) 2022-03-30 2024-02-23 Soitec Silicon On Insulator Structure composite comprenant une couche mince monocristalline sur un substrat support en carbure de silicium poly-cristallin et procede de fabrication associe

Also Published As

Publication number Publication date
WO2024121504A1 (fr) 2024-06-13
KR20250120299A (ko) 2025-08-08
CN120303766A (zh) 2025-07-11
JP2025538707A (ja) 2025-11-28
FR3142829A1 (fr) 2024-06-07
EP4631094A1 (fr) 2025-10-15

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