FR3143855B1 - Photodiode à avalanche - Google Patents

Photodiode à avalanche Download PDF

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Publication number
FR3143855B1
FR3143855B1 FR2214005A FR2214005A FR3143855B1 FR 3143855 B1 FR3143855 B1 FR 3143855B1 FR 2214005 A FR2214005 A FR 2214005A FR 2214005 A FR2214005 A FR 2214005A FR 3143855 B1 FR3143855 B1 FR 3143855B1
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FR
France
Prior art keywords
region
avalanche photodiode
conductivity type
photodiode
present description
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2214005A
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English (en)
Other versions
FR3143855A1 (fr
Inventor
Antonin Zimmer
Dominique Golanski
Sebastien Place
Guillaume Marchand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Original Assignee
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics International NV Switzerland, STMicroelectronics International NV filed Critical STMicroelectronics International NV Switzerland
Priority to FR2214005A priority Critical patent/FR3143855B1/fr
Priority to US18/540,625 priority patent/US20240204127A1/en
Priority to CN202323497577.1U priority patent/CN222582874U/zh
Priority to CN202311766563.7A priority patent/CN118231509A/zh
Publication of FR3143855A1 publication Critical patent/FR3143855A1/fr
Application granted granted Critical
Publication of FR3143855B1 publication Critical patent/FR3143855B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

Photodiode à avalanche La présente description concerne une photodiode (200) à avalanche comprenant :- une jonction PN principale (230) adaptée à être polarisée en inverse ; et- une pluralité de régions semiconductrices dont au moins : - une première région (211) semiconductrice épitaxiée d’un premier type de conductivité ; et - une deuxième région (212) semiconductrice du deuxième type de conductivité, ladite deuxième région étant agencée pour entourer au moins partiellement la première région, et comprenant des surfaces en contact avec des surfaces de ladite première région. La présente description concerne également une méthode de fabrication d'une telle photodiode. Figure pour l'abrégé : Fig. 2
FR2214005A 2022-12-20 2022-12-20 Photodiode à avalanche Active FR3143855B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2214005A FR3143855B1 (fr) 2022-12-20 2022-12-20 Photodiode à avalanche
US18/540,625 US20240204127A1 (en) 2022-12-20 2023-12-14 Avalanche photodiode
CN202323497577.1U CN222582874U (zh) 2022-12-20 2023-12-20 雪崩光电二极管
CN202311766563.7A CN118231509A (zh) 2022-12-20 2023-12-20 雪崩光电二极管

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2214005A FR3143855B1 (fr) 2022-12-20 2022-12-20 Photodiode à avalanche
FR2214005 2022-12-20

Publications (2)

Publication Number Publication Date
FR3143855A1 FR3143855A1 (fr) 2024-06-21
FR3143855B1 true FR3143855B1 (fr) 2025-06-06

Family

ID=86329556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2214005A Active FR3143855B1 (fr) 2022-12-20 2022-12-20 Photodiode à avalanche

Country Status (3)

Country Link
US (1) US20240204127A1 (fr)
CN (2) CN222582874U (fr)
FR (1) FR3143855B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111682039B (zh) * 2016-09-23 2021-08-03 苹果公司 堆叠式背面照明spad阵列
EP3309847B1 (fr) * 2016-10-13 2024-06-05 Canon Kabushiki Kaisha Appareil et système de photo-détection
TWI867078B (zh) * 2019-11-19 2024-12-21 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
TWI872166B (zh) * 2020-03-16 2025-02-11 日商索尼半導體解決方案公司 受光元件及測距系統

Also Published As

Publication number Publication date
CN118231509A (zh) 2024-06-21
FR3143855A1 (fr) 2024-06-21
US20240204127A1 (en) 2024-06-20
CN222582874U (zh) 2025-03-07

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