FR3145458B1 - Matrice comportant une pluralite de cellules memoire non volatiles - Google Patents

Matrice comportant une pluralite de cellules memoire non volatiles

Info

Publication number
FR3145458B1
FR3145458B1 FR2300795A FR2300795A FR3145458B1 FR 3145458 B1 FR3145458 B1 FR 3145458B1 FR 2300795 A FR2300795 A FR 2300795A FR 2300795 A FR2300795 A FR 2300795A FR 3145458 B1 FR3145458 B1 FR 3145458B1
Authority
FR
France
Prior art keywords
electrode
active material
memory cells
volatile memory
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2300795A
Other languages
English (en)
Other versions
FR3145458A1 (fr
Inventor
Laurent Grenouillet
Jean Coignus
Simon Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority to FR2300795A priority Critical patent/FR3145458B1/fr
Priority to PCT/EP2024/051819 priority patent/WO2024156826A1/fr
Priority to US19/151,215 priority patent/US20260122908A1/en
Publication of FR3145458A1 publication Critical patent/FR3145458A1/fr
Application granted granted Critical
Publication of FR3145458B1 publication Critical patent/FR3145458B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species

Landscapes

  • Semiconductor Memories (AREA)

Abstract

L’invention concerne une matrice mémoire comportant une pluralité de cellules mémoire (1) comportant une première électrode (2), une deuxième électrode (3) et une couche (4) de matériau actif cristallin disposée entre la première électrode (2) et la deuxième électrode et présentant une épaisseur comprise entre 2nm et 20nm, le matériau actif étant soit du dioxyde d’hafnium dopé par un élément dopant choisi parmi l’un des éléments suivants : Si, Al, Zr, Gd, Ge, Y ou N soit un alliage HfxZr1-xO2 non dopé ou dopé par un élément dopant choisi parmi l’un des éléments suivants : Si, Al, Gd, Ge, Y ou N, avec 0<x<1 ;  l’une au moins desdites première ou deuxième électrode (3) étant formée d’au moins deux couches comportant une première couche conductrice (5) en contact avec la couche de matériau actif et choisie pour créer des lacunes d’oxygène dans la couche de matériau actif (4) et une deuxième couche conductrice (6) disposée sur la première couche conductrice. Figure 2
FR2300795A 2023-01-27 2023-01-27 Matrice comportant une pluralite de cellules memoire non volatiles Active FR3145458B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2300795A FR3145458B1 (fr) 2023-01-27 2023-01-27 Matrice comportant une pluralite de cellules memoire non volatiles
PCT/EP2024/051819 WO2024156826A1 (fr) 2023-01-27 2024-01-25 Matrice comportant une pluralite de cellules memoire non volatiles
US19/151,215 US20260122908A1 (en) 2023-01-27 2024-01-25 Array including a plurality of non-volatile memory cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2300795A FR3145458B1 (fr) 2023-01-27 2023-01-27 Matrice comportant une pluralite de cellules memoire non volatiles
FR2300795 2023-01-27

Publications (2)

Publication Number Publication Date
FR3145458A1 FR3145458A1 (fr) 2024-08-02
FR3145458B1 true FR3145458B1 (fr) 2026-05-01

Family

ID=87554447

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2300795A Active FR3145458B1 (fr) 2023-01-27 2023-01-27 Matrice comportant une pluralite de cellules memoire non volatiles

Country Status (3)

Country Link
US (1) US20260122908A1 (fr)
FR (1) FR3145458B1 (fr)
WO (1) WO2024156826A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853661B1 (en) * 2013-03-15 2014-10-07 Intermolecular, Inc. Metal aluminum nitride embedded resistors for resistive random memory access cells
US12342547B2 (en) * 2019-12-04 2025-06-24 Tokyo Institute Of Technology Non-volatile ferroelectric storage element and devices comprising them
FR3128849B1 (fr) * 2021-11-02 2023-10-27 Commissariat Energie Atomique PROCEDE DE CO-FABRICATION D’UNE MEMOIRE FERROELECTRIQUE ET D’UNE MEMOIRE RESISTIVE OxRAM ET DISPOSITIF CO-INTEGRANT UNE MEMOIRE FERROELECTRIQUE ET UNE MEMOIRE RESISTIVE OxRAM

Also Published As

Publication number Publication date
US20260122908A1 (en) 2026-04-30
WO2024156826A1 (fr) 2024-08-02
FR3145458A1 (fr) 2024-08-02

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