FR3146242B1 - Structure semi-conductrice pour former des diodes laser a cavite verticale - Google Patents

Structure semi-conductrice pour former des diodes laser a cavite verticale Download PDF

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Publication number
FR3146242B1
FR3146242B1 FR2301768A FR2301768A FR3146242B1 FR 3146242 B1 FR3146242 B1 FR 3146242B1 FR 2301768 A FR2301768 A FR 2301768A FR 2301768 A FR2301768 A FR 2301768A FR 3146242 B1 FR3146242 B1 FR 3146242B1
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FR
France
Prior art keywords
refractive index
contact film
oxide layer
contact
vertical cavity
Prior art date
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Active
Application number
FR2301768A
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English (en)
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FR3146242A1 (fr
Inventor
Christophe Figuet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2301768A priority Critical patent/FR3146242B1/fr
Priority to EP24700464.1A priority patent/EP4674013A1/fr
Priority to CN202480014106.9A priority patent/CN120752819A/zh
Priority to JP2025546896A priority patent/JP2026506939A/ja
Priority to PCT/EP2024/050979 priority patent/WO2024179735A1/fr
Priority to TW113104154A priority patent/TW202504192A/zh
Publication of FR3146242A1 publication Critical patent/FR3146242A1/fr
Application granted granted Critical
Publication of FR3146242B1 publication Critical patent/FR3146242B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L’invention concerne une structure semi-conductrice pour former une ou plusieurs diode(s) laser à cavité verticale comprenant : - un empilement de couches semi-conductrices à base de composés III-V définissant un miroir de Bragg supérieur, disposé sur une couche active constituée d’au moins un puits quantique permettant une émission laser à une longueur d’onde définie, ladite couche active étant disposée sur un miroir de Bragg inférieur, l’émission laser étant destinée à sortir de l’empilement par le miroir inférieur, - un film de contact semi-conducteur, directement disposé sous le miroir de Bragg inférieur, le film de contact présentant une première épaisseur et un premier indice de réfraction complexe n1’ = n1 + i.k1, avec n1 premier indice de réfraction et k1 premier coefficient d’extinction pour la longueur d’onde définie,- un substrat support en arséniure de gallium semi-isolant, - une couche d’oxyde en contact avec une face avant du substrat support, et disposée entre ladite face avant et le film de contact, la couche d’oxyde présentant une deuxième épaisseur et un deuxième indice de réfraction complexe n2’ = n2 + i.k2, avec n2 deuxième indice de réfraction et k2 deuxième coefficient d’extinction pour la longueur d’onde définie. Dans la structure, la couche d’oxyde est en contact direct avec le film de contact, les premier et deuxième coefficients d’extinction sont inférieurs ou égaux à 1, et les première et deuxième épaisseurs sont respectivement définies par : h1 = m1*λ/(4n1) et h2 = m2*λ/(4n2), avec m1 et m2 des entiers. Pas de Figure
FR2301768A 2023-02-27 2023-02-27 Structure semi-conductrice pour former des diodes laser a cavite verticale Active FR3146242B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR2301768A FR3146242B1 (fr) 2023-02-27 2023-02-27 Structure semi-conductrice pour former des diodes laser a cavite verticale
EP24700464.1A EP4674013A1 (fr) 2023-02-27 2024-01-17 Structure semi-conductrice pour former des diodes laser a cavite verticale
CN202480014106.9A CN120752819A (zh) 2023-02-27 2024-01-17 用于形成垂直腔激光二极管的半导体结构
JP2025546896A JP2026506939A (ja) 2023-02-27 2024-01-17 垂直共振器レーザダイオードを形成するための半導体構造体
PCT/EP2024/050979 WO2024179735A1 (fr) 2023-02-27 2024-01-17 Structure semi-conductrice pour former des diodes laser a cavite verticale
TW113104154A TW202504192A (zh) 2023-02-27 2024-02-02 形成垂直腔雷射二極體之半導體結構

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2301768 2023-02-27
FR2301768A FR3146242B1 (fr) 2023-02-27 2023-02-27 Structure semi-conductrice pour former des diodes laser a cavite verticale

Publications (2)

Publication Number Publication Date
FR3146242A1 FR3146242A1 (fr) 2024-08-30
FR3146242B1 true FR3146242B1 (fr) 2025-02-14

Family

ID=86469102

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2301768A Active FR3146242B1 (fr) 2023-02-27 2023-02-27 Structure semi-conductrice pour former des diodes laser a cavite verticale

Country Status (6)

Country Link
EP (1) EP4674013A1 (fr)
JP (1) JP2026506939A (fr)
CN (1) CN120752819A (fr)
FR (1) FR3146242B1 (fr)
TW (1) TW202504192A (fr)
WO (1) WO2024179735A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6746777B1 (en) * 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
EP1705764B1 (fr) * 2004-01-07 2012-11-14 Hamamatsu Photonics K. K. Dispositif photoemetteur a semi-conducteur et son procede de fabrication
CN119349566A (zh) 2015-09-08 2025-01-24 麻省理工学院 基于石墨烯的层转移的系统和方法
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
FR3086800B1 (fr) * 2018-09-28 2020-10-02 Commissariat Energie Atomique Procede de fabrication d'un dispositif optoelectronique d'emission de lumiere infrarouge comportant une couche active a base de gesn
TWI701882B (zh) * 2018-11-08 2020-08-11 晶智達光電股份有限公司 雷射元件
CN114830467A (zh) 2019-12-20 2022-07-29 索尼半导体解决方案公司 发光器件和制造发光器件的方法

Also Published As

Publication number Publication date
FR3146242A1 (fr) 2024-08-30
JP2026506939A (ja) 2026-02-27
WO2024179735A9 (fr) 2025-08-07
EP4674013A1 (fr) 2026-01-07
WO2024179735A1 (fr) 2024-09-06
CN120752819A (zh) 2025-10-03
TW202504192A (zh) 2025-01-16

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